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LMBT5087LT1G

LRC · Bipolar (BJT) · SOT-23

LMBT5087LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP low-noise transistor; the datasheet gives no pin-specific limit, and the device-level maximum collector-base voltage is -50 Vdc with emitter-base voltage of -3.0 Vdc (VEBO).
2 EMITTER passive Emitter terminal of the PNP transistor; the datasheet gives no pin-specific limit, and the device-level emitter-base voltage rating is -3.0 Vdc (VEBO).
3 COLLECTOR passive Collector terminal of the PNP transistor; the datasheet gives no pin-specific limit, and the device-level collector-emitter voltage rating is -50 Vdc (VCEO) with continuous collector current of -50 mA.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -50 Vdc 1
Collector-Base Voltage VCBO -50 Vdc 1
Emitter-Base Voltage VEBO -3 Vdc 1
Collector Current, Continuous IC -50 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation (FR-5 Board) PD 225 mW FR-5 board (1), TA = 25°C 1
Total Device Dissipation (Alumina Substrate) PD 300 mW Alumina substrate (2), TA = 25°C 1
Thermal Resistance, Junction to Ambient (FR-5 Board) RθJA 556 °C/W FR-5 board (1) 1
Thermal Resistance, Junction to Ambient (Alumina Substrate) RθJA 417 °C/W Alumina substrate (2) 1
Collector-Emitter Breakdown Voltage V(BR)CEO -50 Vdc IC = -1.0 mAdc, IB = 0 1
Collector-Base Breakdown Voltage V(BR)CBO -50 Vdc IC = -100 µAdc, IE = 0 1
Collector Cutoff Current ICBO -10 n Adc VCB = -10 Vdc, IE = 0 1
Collector Cutoff Current ICBO -50 n Adc VCB = -35 Vdc, IE = 0 1
DC Current Gain hFE 250 800 IC = -100 µAdc, VCE = -5.0 Vdc 2
DC Current Gain hFE 250 IC = -1.0 mAdc, VCE = -5.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 Vdc IC = -10 mAdc, IB = -1.0 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) -0.85 Vdc IC = -10 mAdc, IB = -1.0 mAdc 2
Current-Gain, Bandwidth Product fT 40 MHz IC = -500 µAdc, VCE = -5.0 Vdc, f = 20 MHz 2
Output Capacitance Cobo 4 pF VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz 2
Small-Signal Current Gain hfe 250 900 IC = -1.0 mAdc, VCE = -5.0 Vdc, f = 1.0 kHz 2
Noise Figure NF 2 dB IC = -20 mAdc, VCE = -5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz 2

CAD (KiCad official)

  • Symbol: LMBT5087LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lmbt5087lt1g-etched.step / lmbt5087lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lmbt5087lt1g.step / lmbt5087lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (7 pp, sha256 3b6082975f6303b6, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF