component

LMBT4401LT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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lmbt4401lt1g-etched.glb lmbt4401lt1g: factory component page (tier=lcsc) · Ray 24d ago
lmbt4401lt1g-etched.step lmbt4401lt1g: factory component page (tier=lcsc) · Ray 24d ago
lmbt4401lt1g-hero.glb lmbt4401lt1g: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
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page.json lmbt4401lt1g: specified limits as data (metadata.characteristics, 35 rows from the datasheet) · Ray 17d ago
README.md lmbt4401lt1g: specified limits as data (metadata.characteristics, 35 rows from the datasheet) · Ray 17d ago

LMBT4401LT1G

LRC · Bipolar (BJT) · SOT-23

LMBT4401LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN general-purpose transistor; the datasheet's maximum emitter-base voltage (VEBO) is 6 Vdc.
2 EMITTER passive Emitter terminal of the NPN transistor; the datasheet's maximum emitter-base voltage (VEBO) is 6 Vdc.
3 COLLECTOR passive Collector terminal of the NPN transistor; limits are VCEO 40 Vdc, VCBO 60 Vdc, and continuous collector current IC 600 mAdc.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector–Emitter Voltage VCEO 40 Vdc 1
Collector–Base Voltage VCBO 60 Vdc 1
Emitter–Base Voltage VEBO 6 Vdc 1
Collector Current — Continuous IC 600 mAdc 1
Total Device Dissipation, FR-5 Board PD 225 mW FR-5 Board (Note 1) @ TA = 25°C 1
Derate above 25°C, FR-5 Board PD 1.8 mW/℃ FR-5 Board, derate above 25°C 1
Thermal Resistance, Junction–to–Ambient, FR-5 Board RΘJA 556 ℃/W Junction–to–Ambient (Note 1), FR-5 Board 1
Total Device Dissipation, Alumina Substrate PD 300 mW Alumina Substrate (Note 2) @ TA = 25°C 1
Derate above 25°C, Alumina Substrate PD 2.4 mW/℃ Alumina Substrate, derate above 25°C 1
Thermal Resistance, Junction–to–Ambient, Alumina Substrate RΘJA 417 ℃/W Junction–to–Ambient (Note 2), Alumina Substrate 1
Junction and Storage Temperature TJ,Tstg -55 150 ℃ 1
Collector–Emitter Breakdown Voltage VBR(CEO) 40 V IC = 1.0 mAdc, IB = 0 2
Collector–Base Breakdown Voltage VBR(CBO) 60 V IC = 0.1 mAdc, IE = 0 2
Emitter–Base Breakdown Voltage VBR(EBO) 6 V IE = 0.1 mAdc, IC = 0 2
Collector Cutoff Current ICEX 0.1 μA VCE = 35 Vdc, VEB = 0.4 Vdc 2
Base Cutoff Current IBEV 0.1 μA VCE = 35 Vdc, VEB = 0.4 Vdc 2
DC Current Gain hFE 20 IC = 0.1 mAdc, VCE = 1.0 Vdc 2
DC Current Gain hFE 40 IC = 1.0 mAdc, VCE = 1.0 Vdc 2
DC Current Gain hFE 80 IC = 10 mAdc, VCE = 1.0 Vdc 2
DC Current Gain hFE 100 300 IC = 150 mAdc, VCE = 1.0 Vdc 2
Collector–Emitter Saturation Voltage VCE(sat) 0.4 V IC = 150 mAdc, IB = 15 mAdc 2
Collector–Emitter Saturation Voltage VCE(sat) 0.75 V IC = 500 mAdc, IB = 50 mAdc 2
Base–Emitter Saturation Voltage VBE(sat) 0.75 0.95 V IC = 150 mAdc, IB = 15 mAdc 2
Base–Emitter Saturation Voltage VBE(sat) 1.2 V IC = 500 mAdc, IB = 50 mAdc 2
Current–Gain — Bandwidth Product fT 250 MHz IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz 2
Collector–Base Capacitance Ccb 6.5 pF VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz 2
Emitter–Base Capacitance Ceb 30 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2
Input Impedance hie 1 15 kΩ VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz 2
Voltage Feedback Ratio hre 0.1 8 X 10 –4 VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz 2
Small–Signal Current Gain hfe 40 500 VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz 2
Output Admittance hoe 1 30 μmhos VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz 2
Delay Time td 15 ns VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc 2
Rise Time tr 20 ns VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc 2
Storage Time ts 225 ns VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc 2
Fall Time tf 30 ns VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc 2

CAD (KiCad official)

  • Symbol: LMBT4401LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lmbt4401lt1g-etched.step / lmbt4401lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lmbt4401lt1g.step / lmbt4401lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (5 pp, sha256 23d893091fe08429, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF