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lmbt4401lt1g: specified limits as data (metadata.characteristics, 35 rows from the datasheet)

Ray ·4dfc4a9e7e ·17d ago ·parent 2646a66
2 files changed +470−1
README.md+42
@@ -21,6 +21,48 @@ LMBT4401LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from t | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector–Emitter Voltage | VCEO |  |  | 40 | Vdc |  | 1 |+| Collector–Base Voltage | VCBO |  |  | 60 | Vdc |  | 1 |+| Emitter–Base Voltage | VEBO |  |  | 6 | Vdc |  | 1 |+| Collector Current — Continuous | IC |  |  | 600 | mAdc |  | 1 |+| Total Device Dissipation, FR-5 Board | PD |  |  | 225 | mW | FR-5 Board (Note 1) @ TA = 25°C | 1 |+| Derate above 25°C, FR-5 Board | PD |  |  | 1.8 | mW/℃ | FR-5 Board, derate above 25°C | 1 |+| Thermal Resistance, Junction–to–Ambient, FR-5 Board | RΘJA |  |  | 556 | ℃/W | Junction–to–Ambient (Note 1), FR-5 Board | 1 |+| Total Device Dissipation, Alumina Substrate | PD |  |  | 300 | mW | Alumina Substrate (Note 2) @ TA = 25°C | 1 |+| Derate above 25°C, Alumina Substrate | PD |  |  | 2.4 | mW/℃ | Alumina Substrate, derate above 25°C | 1 |+| Thermal Resistance, Junction–to–Ambient, Alumina Substrate | RΘJA |  |  | 417 | ℃/W | Junction–to–Ambient (Note 2), Alumina Substrate | 1 |+| Junction and Storage Temperature | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |+| Collector–Emitter Breakdown Voltage | VBR(CEO) | 40 |  |  | V | IC = 1.0 mAdc, IB = 0 | 2 |+| Collector–Base Breakdown Voltage | VBR(CBO) | 60 |  |  | V | IC = 0.1 mAdc, IE = 0 | 2 |+| Emitter–Base Breakdown Voltage | VBR(EBO) | 6 |  |  | V | IE = 0.1 mAdc, IC = 0 | 2 |+| Collector Cutoff Current | ICEX |  |  | 0.1 | μA | VCE = 35 Vdc, VEB = 0.4 Vdc | 2 |+| Base Cutoff Current | IBEV |  |  | 0.1 | μA | VCE = 35 Vdc, VEB = 0.4 Vdc | 2 |+| DC Current Gain | hFE | 20 |  |  |  | IC = 0.1 mAdc, VCE = 1.0 Vdc | 2 |+| DC Current Gain | hFE | 40 |  |  |  | IC = 1.0 mAdc, VCE = 1.0 Vdc | 2 |+| DC Current Gain | hFE | 80 |  |  |  | IC = 10 mAdc, VCE = 1.0 Vdc | 2 |+| DC Current Gain | hFE | 100 |  | 300 |  | IC = 150 mAdc, VCE = 1.0 Vdc | 2 |+| Collector–Emitter Saturation Voltage | VCE(sat) |  |  | 0.4 | V | IC = 150 mAdc, IB = 15 mAdc | 2 |+| Collector–Emitter Saturation Voltage | VCE(sat) |  |  | 0.75 | V | IC = 500 mAdc, IB = 50 mAdc | 2 |+| Base–Emitter Saturation Voltage | VBE(sat) | 0.75 |  | 0.95 | V | IC = 150 mAdc, IB = 15 mAdc | 2 |+| Base–Emitter Saturation Voltage | VBE(sat) |  |  | 1.2 | V | IC = 500 mAdc, IB = 50 mAdc | 2 |+| Current–Gain — Bandwidth Product | fT | 250 |  |  | MHz | IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz | 2 |+| Collector–Base Capacitance | Ccb |  |  | 6.5 | pF | VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz | 2 |+| Emitter–Base Capacitance | Ceb |  |  | 30 | pF | VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz | 2 |+| Input Impedance | hie | 1 |  | 15 | kΩ | VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz | 2 |+| Voltage Feedback Ratio | hre | 0.1 |  | 8 | X 10 –4 | VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz | 2 |+| Small–Signal Current Gain | hfe | 40 |  | 500 |  | VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz | 2 |+| Output Admittance | hoe | 1 |  | 30 | μmhos | VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz | 2 |+| Delay Time | td |  |  | 15 | ns | VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc | 2 |+| Rise Time | tr |  |  | 20 | ns | VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc | 2 |+| Storage Time | ts |  |  | 225 | ns | VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc | 2 |+| Fall Time | tf |  |  | 30 | ns | VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc | 2 |+ ## CAD (KiCad official)  - Symbol: `LMBT4401LT1G`
page.json+428−1
@@ -147,6 +147,433 @@       "Package": "SOT-23",       "Category": "Transistors/Thyristors",       "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "23d893091fe08429",+      "rows": [+        {+          "name": "Collector–Emitter Voltage",+          "symbol": "VCEO",+          "kind": "absolute_maximum",+          "unit": "Vdc",+          "min": null,+          "typ": null,+          "max": 40,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Collector–Base Voltage",+          "symbol": "VCBO",+          "kind": "absolute_maximum",+          "unit": "Vdc",+          "min": null,+          "typ": null,+          "max": 60,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Emitter–Base Voltage",+          "symbol": "VEBO",+          "kind": "absolute_maximum",+          "unit": "Vdc",+          "min": null,+          "typ": null,+          "max": 6,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Collector Current — Continuous",+          "symbol": "IC",+          "kind": "absolute_maximum",+          "unit": "mAdc",+          "min": null,+          "typ": null,+          "max": 600,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Total Device Dissipation, FR-5 Board",+          "symbol": "PD",+          "kind": "thermal",+          "unit": "mW",+          "min": null,+          "typ": null,+          "max": 225,+          "conditions": "FR-5 Board (Note 1) @ TA = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Derate above 25°C, FR-5 Board",+          "symbol": "PD",+          "kind": "thermal",+          "unit": "mW/℃",+          "min": null,+          "typ": null,+          "max": 1.8,+          "conditions": "FR-5 Board, derate above 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction–to–Ambient, FR-5 Board",+          "symbol": "RΘJA",+          "kind": "thermal",+          "unit": "℃/W",+          "min": null,+          "typ": null,+          "max": 556,+          "conditions": "Junction–to–Ambient (Note 1), FR-5 Board",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Total Device Dissipation, Alumina Substrate",+          "symbol": "PD",+          "kind": "thermal",+          "unit": "mW",+          "min": null,+          "typ": null,+          "max": 300,+          "conditions": "Alumina Substrate (Note 2) @ TA = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Derate above 25°C, Alumina Substrate",+          "symbol": "PD",+          "kind": "thermal",+          "unit": "mW/℃",+          "min": null,+          "typ": null,+          "max": 2.4,+          "conditions": "Alumina Substrate, derate above 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction–to–Ambient, Alumina Substrate",+          "symbol": "RΘJA",+          "kind": "thermal",+          "unit": "℃/W",+          "min": null,+          "typ": null,+          "max": 417,+          "conditions": "Junction–to–Ambient (Note 2), Alumina Substrate",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Junction and Storage Temperature",+          "symbol": "TJ,Tstg",+          "kind": "absolute_maximum",+          "unit": "℃",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Collector–Emitter Breakdown Voltage",+          "symbol": "VBR(CEO)",+          "kind": "electrical",+          "unit": "V",+          "min": 40,+          "typ": null,+          "max": null,+          "conditions": "IC = 1.0 mAdc, IB = 0",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector–Base Breakdown Voltage",+          "symbol": "VBR(CBO)",+          "kind": "electrical",+          "unit": "V",+          "min": 60,+          "typ": null,+          "max": null,+          "conditions": "IC = 0.1 mAdc, IE = 0",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Emitter–Base Breakdown Voltage",+          "symbol": "VBR(EBO)",+          "kind": "electrical",+          "unit": "V",+          "min": 6,+          "typ": null,+          "max": null,+          "conditions": "IE = 0.1 mAdc, IC = 0",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector Cutoff Current",+          "symbol": "ICEX",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 0.1,+          "conditions": "VCE = 35 Vdc, VEB = 0.4 Vdc",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Base Cutoff Current",+          "symbol": "IBEV",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 0.1,+          "conditions": "VCE = 35 Vdc, VEB = 0.4 Vdc",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "DC Current Gain",+          "symbol": "hFE",+          "kind": "electrical",+          "unit": "",+          "min": 20,+          "typ": null,+          "max": null,+          "conditions": "IC = 0.1 mAdc, VCE = 1.0 Vdc",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "DC Current Gain",+          "symbol": "hFE",+          "kind": "electrical",+          "unit": "",+          "min": 40,+          "typ": null,+          "max": null,+          "conditions": "IC = 1.0 mAdc, VCE = 1.0 Vdc",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "DC Current Gain",+          "symbol": "hFE",+          "kind": "electrical",+          "unit": "",+          "min": 80,+          "typ": null,+          "max": null,+          "conditions": "IC = 10 mAdc, VCE = 1.0 Vdc",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "DC Current Gain",+          "symbol": "hFE",+          "kind": "electrical",+          "unit": "",+          "min": 100,+          "typ": null,+          "max": 300,+          "conditions": "IC = 150 mAdc, VCE = 1.0 Vdc",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector–Emitter Saturation Voltage",+          "symbol": "VCE(sat)",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 0.4,+          "conditions": "IC = 150 mAdc, IB = 15 mAdc",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector–Emitter Saturation Voltage",+          "symbol": "VCE(sat)",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 0.75,+          "conditions": "IC = 500 mAdc, IB = 50 mAdc",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Base–Emitter Saturation Voltage",+          "symbol": "VBE(sat)",+          "kind": "electrical",+          "unit": "V",+          "min": 0.75,+          "typ": null,+          "max": 0.95,+          "conditions": "IC = 150 mAdc, IB = 15 mAdc",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Base–Emitter Saturation Voltage",+          "symbol": "VBE(sat)",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 1.2,+          "conditions": "IC = 500 mAdc, IB = 50 mAdc",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Current–Gain — Bandwidth Product",+          "symbol": "fT",+          "kind": "electrical",+          "unit": "MHz",+          "min": 250,+          "typ": null,+          "max": null,+          "conditions": "IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Collector–Base Capacitance",+          "symbol": "Ccb",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": null,+          "max": 6.5,+          "conditions": "VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Emitter–Base Capacitance",+          "symbol": "Ceb",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": null,+          "max": 30,+          "conditions": "VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Input Impedance",+          "symbol": "hie",+          "kind": "electrical",+          "unit": "kΩ",+          "min": 1,+          "typ": null,+          "max": 15,+          "conditions": "VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Voltage Feedback Ratio",+          "symbol": "hre",+          "kind": "electrical",+          "unit": "X 10 –4",+          "min": 0.1,+          "typ": null,+          "max": 8,+          "conditions": "VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Small–Signal Current Gain",+          "symbol": "hfe",+          "kind": "electrical",+          "unit": "",+          "min": 40,+          "typ": null,+          "max": 500,+          "conditions": "VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Output Admittance",+          "symbol": "hoe",+          "kind": "electrical",+          "unit": "μmhos",+          "min": 1,+          "typ": null,+          "max": 30,+          "conditions": "VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Delay Time",+          "symbol": "td",+          "kind": "timing",+          "unit": "ns",+          "min": null,+          "typ": null,+          "max": 15,+          "conditions": "VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Rise Time",+          "symbol": "tr",+          "kind": "timing",+          "unit": "ns",+          "min": null,+          "typ": null,+          "max": 20,+          "conditions": "VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Storage Time",+          "symbol": "ts",+          "kind": "timing",+          "unit": "ns",+          "min": null,+          "typ": null,+          "max": 225,+          "conditions": "VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Fall Time",+          "symbol": "tf",+          "kind": "timing",+          "unit": "ns",+          "min": null,+          "typ": null,+          "max": 30,+          "conditions": "VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc",+          "source_page": 2,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],@@ -188,4 +615,4 @@   "visibility": {     "public": true   }-}\ No newline at end of file+}