Loads on click. Unloads only if this page sits in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads on click. Unloads only if this page sits in the background.

PCB Footprint

Open full view ↗
Loads on click. Unloads only if this page sits in the background.
Loads on click. Unloads only if this page sits in the background.
Download PDF
Contents

README

markdown

LM74700

Texas Instruments · Ideal diode controller · SOT-23-6

Drives an external N-channel MOSFET as an ideal diode, replacing a Schottky in the supply path with a FET that drops only millivolts, so it cuts the power lost to a series diode while still blocking reverse current. It works for reverse-polarity protection and for ORing two supplies, turning the FET on when its anode is higher and off in about a microsecond when current reverses. An EN pin gates it and an internal charge pump drives the gate. Runs from 3.2 to 65 V.

Pinout

Pin Name Type Function
1 VCAP power_out Charge-pump output. Connect a 0.1 μF ceramic capacitor from VCAP to ANODE; this reservoir supplies the ~15 V above ANODE needed to enhance the external N-channel MOSFET gate.
2 GND power_in Device ground reference. Tie to system ground; controller withstands VANODE swings down to -65 V relative to GND.
3 EN input Active-high enable input (VIL max 1.22 V, VIH min 1.06 V, hysteresis ~0.52 V). Drive high (or tie to ANODE) for always-on operation; pull low for ~1 μA shutdown. Absolute max 65 V; tolerates VANODE when VANODE ≤ 0 V.
4 CATHODE input Sense input for the ideal-diode cathode. Connect to the drain of the external N-channel MOSFET (system output rail). Recommended operating range -60 V to 60 V; ANODE-to-CATHODE regulated at 20 mV in forward conduction.
5 GATE output Gate-drive output for the external N-channel MOSFET. Sources ~11 mA peak to enhance the FET and sinks up to 2.37 A peak (2.3 A typical) during a reverse-current event for fast (<0.75 μs) turn-off. GATE-to-ANODE clamped ≤15 V.
6 ANODE power_in Input power and ideal-diode anode. Connect to the source of the external N-channel MOSFET (battery/input rail). 3.2 V to 65 V operating; POR rising ~3.9 V; requires a 22 nF (min) capacitor to GND at the pin.

Key specifications

Parameter Value
Type Ideal-diode / ORing controller
Drives External N-channel MOSFET
Input 3.2-65 V
Forward drop Set by FET RDS(on) (millivolts)
Turn-off ~0.6 us on reverse current
Enable EN pin
Package SOT-23-6

Ordering variants

Same part, different packaging or reel option.

  • LM74700QDBVR (SOT-23-6)
  • LM74700-Q1 (automotive)

CAD (KiCad official)

  • Symbol: Power_Management:LM74700 (KiCad official)
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: lm74700-etched.step / lm74700-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lm74700.step / lm74700.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (36 pp, sha256 e16b3a8c0023201f, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF