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LM5105SD
Public Made by Adomby adom
Texas Instruments Gate Drive ICs, WSON-10-EP(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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LM5105SD
Texas Instruments · Gate Drive ICs · WSON-10-EP(4x4)
LM5105SD from Texas Instruments, in a WSON-10-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD | power_in | Positive gate drive supply; decouple VDD to VSS with a low ESR/ESL capacitor placed as close to the IC as possible. |
| 2 | HB | power_in | High-side gate driver bootstrap rail; the positive terminal of the bootstrap capacitor connects here and must be placed as close to the IC as possible. |
| 3 | HO | output | High-side gate driver output; connect to the gate of the high-side N-MOS through a short, low-inductance path. |
| 4 | HS | power_in | High-side MOSFET source connection; connect to the negative terminal of the bootstrap capacitor and to the source of the high-side N-MOS. |
| 5 | NC | unconnected | Not connected. |
| 6 | RDT | input | Dead-time programming pin; a resistor from RDT to VSS programs the turn-on delay of both high- and low-side MOSFETs and must be placed close to the IC. |
| 7 | EN | input | Logic input for driver enable/disable with TTL-compatible threshold and hysteresis; LO and HO are held low when EN is low. |
| 8 | IN | input | Logic input for the gate driver with TTL-compatible threshold and hysteresis; the high-side MOSFET turns on and the low-side MOSFET turns off when IN is high. |
| 9 | VSS | power_in | Ground return; all signals are referenced to this ground. |
| 10 | LO | output | Low-side gate driver output; connect to the gate of the low-side N-MOS through a short, low-inductance path. |
| 11 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-10-EP(4x4) |
| Category | Power Supply Chip |
| Pins | 11 |
CAD (KiCad official)
- Symbol:
LM5105SD - Footprint:
Package_SON:WSON-10-1EP_4x4mm_P0.8mm_EP2.6x3mm - 3D model: WSON-10-EP(4x4) (KiCad packages3D, STEP)
- 3D model files:
lm5105sd-etched.step/lm5105sd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lm5105sd.step/lm5105sd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (26 pp, sha256
b0342a7c85bfeefb, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LM5105SD
**Texas Instruments** · Gate Drive ICs · WSON-10-EP(4x4)
LM5105SD from Texas Instruments, in a WSON-10-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD | power_in | Positive gate drive supply; decouple VDD to VSS with a low ESR/ESL capacitor placed as close to the IC as possible. |
| 2 | HB | power_in | High-side gate driver bootstrap rail; the positive terminal of the bootstrap capacitor connects here and must be placed as close to the IC as possible. |
| 3 | HO | output | High-side gate driver output; connect to the gate of the high-side N-MOS through a short, low-inductance path. |
| 4 | HS | power_in | High-side MOSFET source connection; connect to the negative terminal of the bootstrap capacitor and to the source of the high-side N-MOS. |
| 5 | NC | unconnected | Not connected. |
| 6 | RDT | input | Dead-time programming pin; a resistor from RDT to VSS programs the turn-on delay of both high- and low-side MOSFETs and must be placed close to the IC. |
| 7 | EN | input | Logic input for driver enable/disable with TTL-compatible threshold and hysteresis; LO and HO are held low when EN is low. |
| 8 | IN | input | Logic input for the gate driver with TTL-compatible threshold and hysteresis; the high-side MOSFET turns on and the low-side MOSFET turns off when IN is high. |
| 9 | VSS | power_in | Ground return; all signals are referenced to this ground. |
| 10 | LO | output | Low-side gate driver output; connect to the gate of the low-side N-MOS through a short, low-inductance path. |
| 11 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-10-EP(4x4) |
| Category | Power Supply Chip |
| Pins | 11 |
## CAD (KiCad official)
- Symbol: `LM5105SD`
- Footprint: `Package_SON:WSON-10-1EP_4x4mm_P0.8mm_EP2.6x3mm`
- 3D model: WSON-10-EP(4x4) (KiCad packages3D, STEP)
- 3D model files: `lm5105sd-etched.step` / `lm5105sd-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lm5105sd.step` / `lm5105sd.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/lm5105) (26 pp, sha256 `b0342a7c85bfeefb`, retrieved 2026-10-10, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lm5105sd-datasheet.pdf)