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LM358XK

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Jiangsu RUNIC Tech Operational Amplifier, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LM358XK

Jiangsu RUNIC Tech · Operational Amplifier · SOP-8

LM358XK from Jiangsu RUNIC Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUTA output Output of channel A.
2 -INA input Inverting input of channel A.
3 +INA input Noninverting input of channel A.
4 V- power_in Negative (lowest) power supply or ground for single-supply operation.
5 +INB input Noninverting input of channel B.
6 -INB input Inverting input of channel B.
7 OUTB output Output of channel B.
8 V+ power_in Positive (highest) power supply, 3V to 36V total supply (Vs) recommended, 40V absolute maximum.

Key specifications

Parameter Value
Manufacturer Jiangsu RUNIC Tech
Package SOP-8
Category Amplifiers
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating Voltage Range Vs 3 36 V 25C 7
Quiescent Current/Amplifier IQ 420 650 uA Vs=5V, Io=0mA (420); Vs=30V, Io=0mA (650); -40C to 85C 7
Power-Supply Rejection Ratio PSRR 70 100 dB Vs=5V to 30V, 25C 7
Power-Supply Rejection Ratio (temp) PSRR 60 dB Vs=5V to 30V, -40C to 85C 7
Input Offset Voltage Vos -5 2 5 mV VCM=VS/2, 25C 7
Input Offset Voltage (temp) Vos 7 mV VCM=VS/2, -40C to 85C 7
Input Offset Voltage Average Drift Vos Tc 7 uV/C -40C to 85C 7
Input Bias Current IB 20 150 nA VCM=0V, 25C 7
Input Bias Current (temp) IB 200 nA VCM=0V, -40C to 85C 7
Input Offset Current IOS 5 30 nA VCM=0V, 25C 7
Input Offset Current (temp) IOS 100 nA VCM=0V, -40C to 85C 7
Common-Mode Voltage Range VCM 0 V Vs=30V, 25C; upper limit Vcc-1.5 7
Common-Mode Rejection Ratio CMRR 60 80 dB Vs=5V, VCM=0V to (Vcc-1.5)V, 25C 7
Common-Mode Rejection Ratio (temp) CMRR 60 dB Vs=5V, -40C to 85C 7
Open-Loop Voltage Gain AOL 85 100 dB Vs=15V, RL=2KΩ, Vo=1V to 11V, 25C 7
Open-Loop Voltage Gain (temp) AOL 80 dB Vs=15V, RL=2KΩ, Vo=1V to 11V, -40C to 85C 7
Open-Loop Voltage Gain AOL 83 96 dB Vs=15V, RL=10KΩ, Vo=1V to 11V, 25C 7
Open-Loop Voltage Gain (temp) AOL 78 dB Vs=15V, RL=10KΩ, Vo=1V to 11V, -40C to 85C 7
Output Swing From Rail High VOH 26 V Vs=30V, RL=2KΩ, 25C and -40C to 85C 7
Output Swing From Rail High VOH 27 28 V Vs=30V, RL=10KΩ, 25C (min 27 also -40C to 85C) 7
Output Swing Low VOL 0.5 10 mV Vs=5V, RL=10KΩ, 25C 7
Output Swing Low (temp) VOL 20 mV Vs=5V, RL=10KΩ, -40C to 85C 7
Output Source Current ISOURCE 20 40 mA VS=15V, VIN+=1V, VIN-=0V, Vo=2V, 25C 7
Output Source Current (temp) ISOURCE 20 mA VS=15V, VIN+=1V, VIN-=0V, Vo=2V, -40C to 85C 7
Output Sink Current ISINK 10 15 mA VS=15V, VIN-=1V, VIN+=0V, Vo=2V, 25C 7
Output Sink Current (temp) ISINK 5 mA VS=15V, VIN-=1V, VIN+=0V, Vo=2V, -40C to 85C 7
Output Sink Current ISINK 50 uA VS=15V, VIN-=1V, VIN+=0V, Vo=0.2V, 25C 7
Short-circuit current ISC 40 60 mA VS=15V, Vo=0V, 25C 7
Slew Rate SR 0.35 V/us G=+1, CL=100pF, 25C 7
Gain-Bandwidth Product GBP 1.1 MHz 25C 7
Phase Margin PM 56 ° 25C 7
Setting Time, 0.1% ts 22 us VS=5V, G=+1, CL=100pF, Step=2V, 25C 7
Overload Recovery Time tOR 10 us VIN·Gain≥VS, G=-100, 25C 7
Input Voltage Noise En 0.9 uVpp f = 0.1Hz to 10Hz, Vs=5V, 25C 7
Input Voltage Noise Density en 40 nV/√Hz f = 1KHz, 25C 7
Supply Voltage (single) Vs 3 36 V Single-supply 5
Supply Voltage (dual) Vs -1.5 18 V Dual-supply, ±1.5 to ±18 5
Supply Voltage Vs 40 V Vs=(V+)-(V-) 5
Signal input pin voltage -0.5 0.5 V (V-)-0.5 to (V+)+0.5 5
Signal output pin voltage -0.5 0.5 V (V-)-0.5 to (V+)+0.5 5
Signal input pin current -10 10 mA 5
Signal output pin current -55 55 mA 5
Operating temperature range TA -40 85 °C 5
Junction temperature TJ 150 °C 5
Storage temperature Tstg -55 150 °C 5
ESD HBM V(ESD) 3000 V Human-body model 5
ESD MM V(ESD) 200 V Machine Model 5
Junction-to-ambient thermal resistance RϴJA 124.7 °C/W SOIC-8 5
Junction-to-case(top) thermal resistance RϴJC(top) 66.9 °C/W SOIC-8 5
Junction-to-board thermal resistance RϴJB 67.9 °C/W SOIC-8 5
Junction-to-top characterization parameter ѰJT 19.2 °C/W SOIC-8 5
Junction-to-board characterization parameter ѰJB 67.2 °C/W SOIC-8 5

CAD (KiCad official)

  • Symbol: LM358XK
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: lm358xk-etched.step / lm358xk-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lm358xk.step / lm358xk.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu RUNIC Tech datasheet (15 pp, sha256 2426ea82654a722b, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF