LM3404B

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  "type": "component",
  "slug": "lm3404b",
  "title": "LM3404B",
  "brief": "Leiditech MOSFETs, SOT-23. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
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    "mpn": "LM3404B",
    "manufacturer": "Leiditech",
    "package": "SOT-23",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603039826593656832",
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    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Control terminal for the N-channel enhancement mode MOSFET. VGS(th) typ 1.5V (1.2V min / 2.5V max at VDS=VGS, ID=250μA). Absolute maximum VGSS = ±20V. Rated for full enhancement at VGS=10V (RDS(on) typ 29mΩ) and logic-level operation at VGS=4.5V (RDS(on) typ 45mΩ)."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source. Reference terminal for gate drive and current return for the drain-source channel. Continuous drain-to-source diode forward current IS = 4A max; body diode VSD = 1.2V max at IS=4A, VGS=0V."
      },
      {
        "number": "3",
        "name": "D",
        "type": "passive",
        "description": "Drain. Switched high-side terminal of the N-channel MOSFET. VDSS = 30V max (V(BR)DSS typ 32V at VGS=0V, ID=250μA). Continuous drain current ID = 4.2A at TA=25℃ (2.6A at TA=70℃); pulsed IDM = 16A."
      }
    ],
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      "pins": {
        "total": 3,
        "described": 3,
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        "refuses_to_fabricate": true
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        "zmin_mm": 0.0,
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  "metadata": {
    "specs": {
      "Manufacturer": "Leiditech",
      "Package": "SOT-23",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
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        {
          "name": "Drain-Source Voltage",
          "symbol": "VDSS",
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        {
          "name": "Continuous Drain Current",
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          "name": "Pulsed Drain Current",
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        {
          "name": "Power Dissipation",
          "symbol": "PD",
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          "unit": "W",
          "min": null,
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          "max": 1,
          "conditions": "TA = 25℃",
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        },
        {
          "name": "Thermal Resistance, Junction to Ambient",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": null,
          "max": 125,
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        {
          "name": "Operating and Storage Temperature Range",
          "symbol": "TJ, TSTG",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 30,
          "typ": 32,
          "max": null,
          "conditions": "VGS=0V, ID=250μA",
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        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
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          "unit": "μA",
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          "typ": null,
          "max": 1,
          "conditions": "VDS=30V, VGS=0V",
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        },
        {
          "name": "Gate to Body Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
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          "typ": null,
          "max": 100,
          "conditions": "VDS=0V, VGS= ±20V",
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        },
        {
          "name": "Gate Threshold Voltage",
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          "conditions": "VDS=VGS, ID=250μA",
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        },
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          "name": "Static Drain-Source on-Resistance",
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          "kind": "electrical",
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          "min": null,
          "typ": 29,
          "max": 38,
          "conditions": "VGS=10V, ID=4A",
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        },
        {
          "name": "Static Drain-Source on-Resistance",
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          "kind": "electrical",
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          "max": 65,
          "conditions": "VGS=4.5V, ID=3A",
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        },
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
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  "updated_at": "2026-09-28T16:40:35.598Z"
}