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LM3404B
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Leiditech MOSFETs, SOT-23. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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lm3404b: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
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LM3404B
Leiditech · MOSFETs · SOT-23
LM3404B from Leiditech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Control terminal for the N-channel enhancement mode MOSFET. VGS(th) typ 1.5V (1.2V min / 2.5V max at VDS=VGS, ID=250μA). Absolute maximum VGSS = ±20V. Rated for full enhancement at VGS=10V (RDS(on) typ 29mΩ) and logic-level operation at VGS=4.5V (RDS(on) typ 45mΩ). |
| 2 | S | passive | Source. Reference terminal for gate drive and current return for the drain-source channel. Continuous drain-to-source diode forward current IS = 4A max; body diode VSD = 1.2V max at IS=4A, VGS=0V. |
| 3 | D | passive | Drain. Switched high-side terminal of the N-channel MOSFET. VDSS = 30V max (V(BR)DSS typ 32V at VGS=0V, ID=250μA). Continuous drain current ID = 4.2A at TA=25℃ (2.6A at TA=70℃); pulsed IDM = 16A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Leiditech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Ordering variants
Same part, different packaging or reel option.
LM3404B
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 4.2 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | 2.6 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 16 | A | 1 | |||
| Power Dissipation | PD | 1 | W | TA = 25℃ | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 125 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | 32 | V | VGS=0V, ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 29 | 38 | mΩ | VGS=10V, ID=4A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 45 | 65 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 4 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 16 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=4A | 2 |
CAD (KiCad official)
- Symbol:
LM3404B - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lm3404b-etched.step/lm3404b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lm3404b.step/lm3404b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Leiditech datasheet (None pp, sha256
2db1e81a6605a692, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LM3404B
**Leiditech** · MOSFETs · SOT-23
LM3404B from Leiditech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Control terminal for the N-channel enhancement mode MOSFET. VGS(th) typ 1.5V (1.2V min / 2.5V max at VDS=VGS, ID=250μA). Absolute maximum VGSS = ±20V. Rated for full enhancement at VGS=10V (RDS(on) typ 29mΩ) and logic-level operation at VGS=4.5V (RDS(on) typ 45mΩ). |
| 2 | S | passive | Source. Reference terminal for gate drive and current return for the drain-source channel. Continuous drain-to-source diode forward current IS = 4A max; body diode VSD = 1.2V max at IS=4A, VGS=0V. |
| 3 | D | passive | Drain. Switched high-side terminal of the N-channel MOSFET. VDSS = 30V max (V(BR)DSS typ 32V at VGS=0V, ID=250μA). Continuous drain current ID = 4.2A at TA=25℃ (2.6A at TA=70℃); pulsed IDM = 16A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Leiditech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Ordering variants
Same part, different packaging or reel option.
- `LM3404B`
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 4.2 | A | TA=25℃ | 1 |
| Continuous Drain Current | ID | | | 2.6 | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | | | 16 | A | | 1 |
| Power Dissipation | PD | | | 1 | W | TA = 25℃ | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 125 | ℃/W | | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | 32 | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS= ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 29 | 38 | mΩ | VGS=10V, ID=4A | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 45 | 65 | mΩ | VGS=4.5V, ID=3A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS | | | 4 | A | | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | 16 | A | | 2 |
| Drain to Source Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=4A | 2 |
## CAD (KiCad official)
- Symbol: `LM3404B`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `lm3404b-etched.step` / `lm3404b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lm3404b.step` / `lm3404b.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Leiditech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603039826593656832) (None pp, sha256 `2db1e81a6605a692`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lm3404b-datasheet.pdf)