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LM2575HVS-3.3RG

HANSCHIP semiconductor · DC-DC Converters · TO-263-5

LM2575HVS-3.3RG from HANSCHIP semiconductor, in a TO-263-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VIN power_in Supply input voltage pin; maximum VIN is 55 V for the LM2575HV versions (40 V for non-HV), with a 6 V minimum for the 3.3 V output regulation conditions.
2 Output output Switching output of the internal power transistor, with cycle-by-cycle current limit (typ. 5.8 A) and 2 A guaranteed output current.
3 Ground power_in Ground pin; the package tab is also connected to GND.
4 Feedback input Feedback input for regulation; for the fixed 3.3 V version it senses the output voltage (3.3 V nominal, ±4% over line and load).
5 ON/OFF input Active-low shutdown input (TTL-compatible); high level (VIH min 2.2 V) turns the regulator off into standby (typ. 50 µA), with an absolute maximum range of -0.3 V to VIN.
6 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HANSCHIP semiconductor
Package TO-263-5
Category Power Management (PMIC)
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Output voltage (LM2575HV, 6V≤VIN≤55V, 0.5A≤Iload≤2A), TJ=25°C VOUT 3.168 3.3 3.45 V 6V ≤ VIN ≤ 55V, 0.5A ≤ I load ≤ 2A; test circuit Fig. 2; TJ=25°C (standard font) 5
Output voltage (LM2575HV, 6V≤VIN≤55V, 0.5A≤Iload≤2A), full junction temperature range VOUT 3.135 3.3 3.482 V 6V ≤ VIN ≤ 55V, 0.5A ≤ I load ≤ 2A; test circuit Fig. 2; full operating junction temperature range (bold) 5
Output voltage (VIN = 12V, I load = 0.5A) VOUT 3.234 3.3 3.366 V VIN = 12V, I load = 0.5A; test circuit Fig. 2 5
Oscillator frequency, TJ=25°C fO 47 52 58 kHz 注 11; TJ=25°C (standard font) 7
Oscillator frequency, full junction temperature range fO 42 52 63 kHz 注 11; full operating junction temperature range (bold) 7
Current limit, TJ=25°C ICL 4.2 5.8 6.9 A 注 4, 11; TJ=25°C (standard font) 7
Current limit, full junction temperature range ICL 3.5 5.8 7.5 A 注 4, 11; full operating junction temperature range (bold) 7
Saturation voltage, TJ=25°C VSAT 1.4 1.8 V IOUT = 2A (注 4); TJ=25°C (standard font) 7
Saturation voltage, full junction temperature range VSAT 1.4 2 V IOUT = 2A (注 4); full operating junction temperature range (bold) 7
DC max duty cycle (on) DC 93 98 % 注 5 7
Output leakage current, output = 0V IL 7.5 mA Output = 0V (注 6,7) 7
Output leakage current, output = -1V IL 2 30 mA Output = -1V (注 6,7) 7
Quiescent current IQ 5 10 mA 注 6 7
Standby quiescent current ISTBY 50 200 µA ON/OFF pin = 5V (OFF) 7
ON/OFF control logic input high level, TJ=25°C VIH 2.2 1.4 V VOUT = 0V; TJ=25°C (standard font) 7
ON/OFF control logic input high level, full junction temperature range VIH 2.4 1.4 V VOUT = 0V; full operating junction temperature range (bold) 7
ON/OFF control logic input low level, TJ=25°C VIL 1.2 1 V VOUT = nominal input voltage; TJ=25°C (standard font) 7
ON/OFF control logic input low level, full junction temperature range VIL 1.2 0.8 V VOUT = nominal input voltage; full operating junction temperature range (bold) 7
ON/OFF control input current (OFF) IIH 12 30 µA ON/OFF control (OFF) 7
ON/OFF control input current (ON) IIL 0 10 µA ON/OFF control = 0V (ON) 7
Maximum supply voltage (LM2575HV) VIN 55 V LM2575HV 4
ON/OFF pin input voltage VON_OFF -0.3 V upper limit +VIN 4
Output voltage to ground (steady state) -1 V steady state 4
Storage temperature range TSTG -65 150 °C 4
Maximum junction temperature TJ 150 °C 4
ESD rating (minimum) ESD 2 KV C = 100 pF, R = 1.5 kΩ 4
Lead temperature (soldering, 10 s) TLEAD 245 °C soldering, 10 s 4
Supply voltage (LM2575HV) VIN 55 V LM2575HV 4
Operating junction temperature range TA -40 125 °C 4
Thermal resistance, junction to ambient, S-package θJA 50 °C/W S-package; 0.5 sq in copper (注 10) 7
Thermal resistance, junction to ambient, S-package θJA 37 °C/W S-package; 1 sq in copper (注 10) 7
Thermal resistance, junction to ambient, S-package θJA 32 °C/W S-package; 1.6 or more sq in copper (注 10) 7

CAD (KiCad official)

  • Symbol: LM2575HVS-3.3RG
  • Footprint: Package_TO_SOT_SMD:TO-263-5_TabPin6
  • 3D model: TO-263-5 (KiCad packages3D, STEP)
  • 3D model files: lm2575hvs-3-3rg-etched.step / lm2575hvs-3-3rg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lm2575hvs-3-3rg.step / lm2575hvs-3-3rg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HANSCHIP semiconductor datasheet (13 pp, sha256 61f0988f41d30cd8, retrieved 2026-10-19, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF