component
LM2309
Public Made by Adomby adom
Leiditech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 10d ago |
| viewers | 10d ago |
| lm2309-etched.glb | 10d ago |
| lm2309-etched.step | 10d ago |
| lm2309-hero.glb | 10d ago |
| lm2309-hero.overlay.json | 10d ago |
| lm2309.glb | 10d ago |
| lm2309.kicad_mod | 10d ago |
| lm2309.kicad_sym | 10d ago |
| lm2309.lbr | 10d ago |
| lm2309.step | 10d ago |
| package.json | 10d ago |
| page.json | 10d ago |
| README.md | 10d ago |
LM2309
Leiditech · MOSFETs · SOT-23
LM2309 from Leiditech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel enhancement-mode MOSFET, with a maximum gate-source voltage of ±20 V and a gate threshold of -1 V to -3 V at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET; the body diode forward drop is at most -1.2 V at IS=-1.2 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for BVDSS of -60 V, continuous ID of -1.6 A and pulsed IDM of -6 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Leiditech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Drain Current (continuous) | ID | -1.6 | A | 1 | |||
| Drain Current (pulsed) | IDM | -6 | A | 1 | |||
| Total Device Dissipation | PD | 1000 | mW | TA=25℃ | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | ID = -250uA, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | ID = -250uA, VGS= VDS | 2 | |
| Diode Forward Voltage Drop | VSD | -1.2 | V | IS= -1.2A, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | uA | VGS=0V, VDS= -60V | 2 | ||
| Gate Body Leakage | IGSS | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 200 | 250 | mΩ | ID= -1.8A, VGS= -10V | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 240 | 300 | mΩ | ID= -1.4A, VGS= -4.5V | 2 | |
| Input Capacitance | CISS | 364 | pF | VGS=0V, VDS= -25V, f=1MHz | 2 | ||
| Output Capacitance | COSS | 41 | pF | VGS=0V, VDS= -25V, f=1MHz | 2 | ||
| Turn-ON Time | t(on) | 20 | ns | VDS= -30V, ID= -1A, RGEN=3.3Ω | 2 | ||
| Turn-OFF Time | t(off) | 5.2 | ns | VDS= -30V, ID= -1A, RGEN=3.3Ω | 2 |
CAD (KiCad official)
- Symbol:
LM2309 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lm2309-etched.step/lm2309-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lm2309.step/lm2309.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Leiditech datasheet (3 pp, sha256
ee40e0212c92d999, retrieved 2026-10-28, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).