component

LKS0405SCG

Public Made by Adom

by adom

LINKOSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorslks0405scgfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 2d ago
viewers lks0405scg: viewers · Ray 2d ago
lks0405scg-etched.glb Publish 0.1.0 · Ray 2d ago
lks0405scg-etched.step lks0405scg: factory component page (tier=lcsc) · Ray 2d ago
lks0405scg-hero.glb lks0405scg: hero GLB from the etched model (keeps the MPN mark) · Ray 2d ago
lks0405scg-hero.overlay.json Publish 0.1.0 · Ray 2d ago
lks0405scg.glb Publish 0.1.0 · Ray 2d ago
lks0405scg.kicad_mod Publish 0.1.0 · Ray 2d ago
lks0405scg.kicad_sym Publish 0.1.0 · Ray 2d ago
lks0405scg.lbr Publish 0.1.0 · Ray 2d ago
lks0405scg.step Publish 0.1.0 · Ray 2d ago
package.json Publish 0.1.0 · Ray 2d ago
page.json Set visibility: public · Ray 2d ago
README.md Publish 0.1.0 · Ray 2d ago

LKS0405SCG

LINKOSEMI · MOSFETs · SOP-8

LKS0405SCG from LINKOSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; the body diode conducts from this pin to D1 in the schematic.
2 G1 input Gate of MOSFET 1; VGS rating is ±20V, with operation stated down to ±4.5V gate drive.
3 S2 passive Source of MOSFET 2; the body diode conducts from this pin to D2 in the schematic.
4 G2 input Gate of MOSFET 2; VGS rating is ±20V, with operation stated down to ±4.5V gate drive.
5 D2 passive Drain of MOSFET 2, internally common with pin 6; VDS rating is 40V (N) or -40V (P).
6 D2 passive Drain of MOSFET 2, internally common with pin 5; VDS rating is 40V (N) or -40V (P).
7 D1 passive Drain of MOSFET 1, internally common with pin 8; VDS rating is 40V (N) or -40V (P).
8 D1 passive Drain of MOSFET 1, internally common with pin 7; VDS rating is 40V (N) or -40V (P).

Key specifications

Parameter Value
Manufacturer LINKOSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-channel) VDS 40 V VGS=0V 1
Drain-Source Voltage (P-channel) VDS -40 V VGS=0V 1
Gate-Source Voltage (N-channel) VGS -20 20 V VDS=0V 1
Gate-Source Voltage (P-channel) VGS -20 20 V VDS=0V 1
Drain Current-Continuous (N-channel) ID 6.3 A TA=25℃ 1
Drain Current-Continuous (P-channel) ID -4.2 A TA=25℃ 1
Drain Current-Continuous (N-channel) ID 4 A TA=100℃ 1
Drain Current-Continuous (P-channel) ID -2.7 A TA=100℃ 1
Drain Current-Pulsed (N-channel) IDM 25.2 A Note 1 1
Drain Current-Pulsed (P-channel) IDM -16.8 A Note 1 1
Maximum Power Dissipation (N-channel) PD 1.83 W TA=25℃ 1
Maximum Power Dissipation (P-channel) PD 1.83 W TA=25℃ 1
Maximum Power Dissipation (N-channel) PD 0.73 W TA=100℃ 1
Maximum Power Dissipation (P-channel) PD 0.73 W TA=100℃ 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient (N-channel) RθJA 68 ℃/W 1
Thermal Resistance, Junction-to-Ambient (P-channel) RθJA 68 ℃/W 1
Drain-Source Breakdown Voltage (N-channel) BVDSS 40 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current (N-channel) IDSS 1 μA VDS=40V, VGS=0V TJ=25℃ 2
Zero Gate Voltage Drain Current (N-channel) IDSS 100 μA VDS=40V, VGS=0V TJ=125℃ 2
Gate-Body Leakage Current (N-channel) IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage (N-channel) VGS(th) 1 2.5 V VDS=VGS, ID=250μA 2
Forward Transconductance (N-channel) gFS 6 S VDS=5V, ID=5A 2
Drain-Source On-State Resistance (N-channel) RDS(ON) 20 26 mΩ VGS=10V, ID=5A TJ=25℃ 2
Drain-Source On-State Resistance (N-channel) RDS(ON) 24.5 33 mΩ VGS=4.5V, ID=4A TJ=25℃ 2
Forward on Voltage (N-channel body diode) VSD 1.2 V VGS=0V, IS=5A (Note 3) 2
Drain-Source Breakdown Voltage (P-channel) BVDSS -40 V VGS=0V ID=-250μA 5
Zero Gate Voltage Drain Current (P-channel) IDSS -1 μA VDS=-40V, VGS=0V TJ=25℃ 5
Zero Gate Voltage Drain Current (P-channel) IDSS -100 μA VDS=-40V, VGS=0V TJ=125℃ 5
Gate-Body Leakage Current (P-channel) IGSS -100 100 nA VGS=±20V, VDS=0V 5
Gate Threshold Voltage (P-channel) VGS(th) -1 -2.5 V VDS=VGS, ID=-250μA 5
Forward Transconductance (P-channel) gFS 8 S VDS=-5V, ID=-4A 5
Drain-Source On-State Resistance (P-channel) RDS(ON) 46 60 mΩ VGS=-10V, ID=-4A TJ=25℃ 5
Drain-Source On-State Resistance (P-channel) RDS(ON) 59 78 mΩ VGS=-4.5V, ID=-3A TJ=25℃ 5
Forward on Voltage (P-channel body diode) VSD -1.2 V VGS=0V, IS=-4A (Note 3) 5

CAD (KiCad official)

  • Symbol: LKS0405SCG
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: lks0405scg-etched.step / lks0405scg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lks0405scg.step / lks0405scg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LINKOSEMI datasheet (9 pp, sha256 18b84eb525097a8f, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF