component
LH8550QLT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 29d ago |
| viewers | 29d ago |
| lh8550qlt1g-etched.glb | 29d ago |
| lh8550qlt1g-etched.step | 29d ago |
| lh8550qlt1g-hero.glb | 29d ago |
| lh8550qlt1g-hero.overlay.json | 29d ago |
| lh8550qlt1g.glb | 29d ago |
| lh8550qlt1g.kicad_mod | 29d ago |
| lh8550qlt1g.kicad_sym | 29d ago |
| lh8550qlt1g.lbr | 29d ago |
| lh8550qlt1g.step | 29d ago |
| package.json | 29d ago |
| page.json | 25d ago |
| README.md | 25d ago |
LH8550QLT1G
LRC · Bipolar (BJT) · SOT-23
LH8550QLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet gives no separate base limit, and the part is rated VEBO 6 V with VCEO -50 V and IC -1500 mAdc continuous. |
| 2 | EMITTER | passive | Emitter terminal; emitter-base breakdown V(BR)EBO is -6 V minimum at IE=-100 µA with the collector open. |
| 3 | COLLECTOR | passive | Collector terminal; rated for VCEO -50 V, VCBO -50 V and continuous collector current IC -1500 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -50 | V | IC=-2.0mA,I =0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -6 | V | IE=-100 µA, I =0 | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -50 | V | IC=-100 µA, I =0 | 2 | ||
| Collector Cutoff Current | ICBO | -100 | nA | VCB=-35V,I =0 | 2 | ||
| Emitter Cutoff Current | IEBO | -100 | nA | VEB=-6V,I =0 | 2 | ||
| DC Current Gain (Q grade) | hFE | 160 | 320 | IC=-100mA,VCE=-1V | 2 | ||
| DC Current Gain | hFE | 40 | IC=-800mA,VCE=-1V | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(S) | -0.5 | V | IC=-800mA I B =-80mA | 2 | ||
| Base-Emitter Voltage | VBE | -0.66 | -1 | V | VCE=-1V,I =-10mA | 2 | |
| Collector-Emitter Voltage | VCEO | -50 | V | 1 | |||
| Collector-Base Voltage | VCBO | -50 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 6 | V | 1 | |||
| Collector Current-continuous | IC | -1500 | mAdc | 1 | |||
| Total Dissipation Power | 225 | mW | 1 | ||||
| Junction and Storage Temperature | Tj, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
LH8550QLT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lh8550qlt1g-etched.step/lh8550qlt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lh8550qlt1g.step/lh8550qlt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (4 pp, sha256
0a5d8504b1372d6c, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).