main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 29d ago
viewers lh8550qlt1g: viewers · Ray 29d ago
lh8550qlt1g-etched.glb lh8550qlt1g: factory component page (tier=lcsc) · Ray 29d ago
lh8550qlt1g-etched.step lh8550qlt1g: factory component page (tier=lcsc) · Ray 29d ago
lh8550qlt1g-hero.glb lh8550qlt1g: hero GLB from the etched model (keeps the MPN mark) · Ray 29d ago
lh8550qlt1g-hero.overlay.json Publish 0.1.0 · Ray 29d ago
lh8550qlt1g.glb Publish 0.1.0 · Ray 29d ago
lh8550qlt1g.kicad_mod Publish 0.1.0 · Ray 29d ago
lh8550qlt1g.kicad_sym Publish 0.1.0 · Ray 29d ago
lh8550qlt1g.lbr Publish 0.1.0 · Ray 29d ago
lh8550qlt1g.step Publish 0.1.0 · Ray 29d ago
package.json Publish 0.1.0 · Ray 29d ago
page.json lh8550qlt1g: specified limits as data (metadata.characteristics, 15 rows from the datasheet) · Ray 25d ago
README.md lh8550qlt1g: specified limits as data (metadata.characteristics, 15 rows from the datasheet) · Ray 25d ago

LH8550QLT1G

LRC · Bipolar (BJT) · SOT-23

LH8550QLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives no separate base limit, and the part is rated VEBO 6 V with VCEO -50 V and IC -1500 mAdc continuous.
2 EMITTER passive Emitter terminal; emitter-base breakdown V(BR)EBO is -6 V minimum at IE=-100 µA with the collector open.
3 COLLECTOR passive Collector terminal; rated for VCEO -50 V, VCBO -50 V and continuous collector current IC -1500 mAdc.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -50 V IC=-2.0mA,I =0 2
Emitter-Base Breakdown Voltage V(BR)EBO -6 V IE=-100 µA, I =0 2
Collector-Base Breakdown Voltage V(BR)CBO -50 V IC=-100 µA, I =0 2
Collector Cutoff Current ICBO -100 nA VCB=-35V,I =0 2
Emitter Cutoff Current IEBO -100 nA VEB=-6V,I =0 2
DC Current Gain (Q grade) hFE 160 320 IC=-100mA,VCE=-1V 2
DC Current Gain hFE 40 IC=-800mA,VCE=-1V 2
Collector-Emitter Saturation Voltage VCE(S) -0.5 V IC=-800mA I B =-80mA 2
Base-Emitter Voltage VBE -0.66 -1 V VCE=-1V,I =-10mA 2
Collector-Emitter Voltage VCEO -50 V 1
Collector-Base Voltage VCBO -50 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current-continuous IC -1500 mAdc 1
Total Dissipation Power 225 mW 1
Junction and Storage Temperature Tj, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: LH8550QLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lh8550qlt1g-etched.step / lh8550qlt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lh8550qlt1g.step / lh8550qlt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (4 pp, sha256 0a5d8504b1372d6c, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF