component
LGE2310
Public Made by Adomby adom
LGE MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLGE2310
LGE · MOSFETs · SOT-23
LGE2310 from LGE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold VGS(th) 0.5 V min to 2 V max at ID=250µA. |
| 2 | S | passive | Source; continuous drain current 3 A and pulsed drain current 10 A rating (note 1). |
| 3 | D | passive | Drain; drain-source voltage rated 60 V, RDS(on) below 105 mΩ at VGS=10V and below 125 mΩ at VGS=4.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LGE |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 3 | A | 1 | |||
| Pulsed Drain Current | IDM | 10 | A | Repetitive rating; pulse width limited by maximum junction temperature (note 1) | 1 | ||
| Maximum Power Dissipation | PD | 0.35 | W | 1 | |||
| Thermal Resistance from Junction to Ambient | RθJA | 357 | ℃/W | Surface mounted on FR4 board, t≤10 sec (note 2) | 1 | ||
| Junction and Storage Temperature | TJ、TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0V, ID =250µA | 1 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =60V,VGS = 0V | 1 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS =±20V, VDS = 0V | 1 | |
| Gate threshold voltage (note 3) | VGS(th) | 0.5 | 2 | V | VDS =VGS, ID =250µA | 1 | |
| Drain-source on-resistance (note 3) | RDS(on) | 105 | mΩ | VGS =10V, ID =3A | 1 | ||
| Drain-source on-resistance (note 3) | RDS(on) | 125 | mΩ | VGS =4.5V, ID =3A | 1 | ||
| Forward transconductance (note 3) | gFS | 1.4 | S | VDS =15V, ID =2A | 1 | ||
| Diode forward voltage (note 3) | VSD | 1.2 | V | IS=3A, VGS = 0V | 1 | ||
| Input Capacitance | Ciss | 247 | pF | VDS=30V,VGS=0V,f =1MHz | 2 | ||
| Output Capacitance | Coss | 34 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 19.5 | pF | 2 | |||
| Turn-on delay time | td(on) | 6 | ns | VDS= 30 V,ID=1.5A, VGS=10V, RGEN =1 Ω | 2 | ||
| Turn-on rise time | tr | 15 | ns | 2 | |||
| Turn-off delay time | td(off) | 15 | ns | 2 | |||
| Turn-off fall time | tf | 10 | ns | 2 | |||
| Total Gate Charge | Qg | 6 | nC | VDS =30V, VGS = 4.5 V, ID = 3A | 2 | ||
| Gate-Source Charge | Qgs | 1 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 1.3 | nC | 2 |
CAD (KiCad official)
- Symbol:
LGE2310 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lge2310-etched.step/lge2310-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lge2310.step/lge2310.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LGE datasheet (4 pp, sha256
a22e251f0df3aa40, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).