component
LGE2300
Public Made by Adomby adom
LGE MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLGE2300
LGE · MOSFETs · SOT-23
LGE2300 from LGE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, with threshold voltage 0.5 V min to 1.5 V max at 250 µA. |
| 2 | S | passive | Source; continuous body-diode forward current is 5.2 A at TC=25°C. |
| 3 | D | passive | Drain; drain-source breakdown voltage is 20 V, with continuous drain current of 5.2 A at TC=25°C and pulsed drain current of 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LGE |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current (VGS=10V) | ID | 5.2 | A | TC =25°C | 1 | ||
| Continuous Drain Current (VGS=10V) | ID | 4 | A | TC =100°C | 1 | ||
| Pulse Drain Current | IDM | 20 | A | TC =25°C | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TC =25°C | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 135 | °C/W | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -50 | 155 | °C | 1 | ||
| Diode Continuous Forward Current | IS | 5.2 | A | TC =25°C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (Tc=25℃) | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (Tc=125℃) | IDSS | 100 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 0.5 | 0.7 | 1.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 25 | 32 | mΩ | VGS=10V, ID=5.2A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 32 | 40 | mΩ | VGS=4.5V, ID=4.8A | 2 | |
| Source-drain current (Body Diode) | ISD | 5.2 | A | 2 | |||
| Pulsed Source-drain current (Body Diode) | ISDM | 20 | A | Tc=25℃ | 2 | ||
| Forward on voltage | VSD | 0.85 | 1.3 | V | Tj=25℃,ISD=2.8A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
LGE2300 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lge2300-etched.step/lge2300-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lge2300.step/lge2300.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LGE datasheet (3 pp, sha256
077d913b83a1466f, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).