component
LESD8D7.0CAT5G-HXY
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HXY MOSFET ESD Protection Devices, DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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LESD8D7.0CAT5G-HXY
HXY MOSFET · ESD Protection Devices · DFN1006-2L
LESD8D7.0CAT5G-HXY from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bidirectional ESD protection line terminal (pin 1 of the two-terminal DFN1006-2L); the device is symmetric with VRWM 7.0 V, so either terminal may connect to the protected line or to ground. |
| 2 | 2 | passive | Bidirectional ESD protection line terminal (pin 2 of the two-terminal DFN1006-2L); the device is symmetric with VRWM 7.0 V, so either terminal may connect to the protected line or to ground. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse working voltage | VRWM | 7 | V | 2 | |||
| Reverse leakage current | IR | 1 | uA | @ VRWM | 2 | ||
| Breakdown voltage | VBR | 7.2 | V | @ IT = 1.0 mA | 2 | ||
| Clamping voltage | VC | 13 | V | @ IPP=3 A | 2 | ||
| Clamping voltage at max IPP | VC | 18 | V | @ Max IPP | 2 | ||
| Peak pulse current | IPP | 20 | A | Surge waveform per Figure 2 | 2 | ||
| Peak pulse power | PPK | 360 | W | Surge waveform per Figure 2 | 2 | ||
| Capacitance | C | 8 | 9 | pF | 2 | ||
| Dynamic resistance | R(dynamic) | 0.24 | ohm | @16A (TLP) | 2 | ||
| Peak Pulse Power | PPP | 360 | W | tp = 8/20μs, Tamb=25°C | 1 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Operating Temperature Range | Top | -40 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| ESD IEC61000-4-2 air discharge | -20 | 20 | KV | IEC61000-4-2 air discharge | 1 | ||
| ESD IEC61000-4-2 contact discharge | -15 | 15 | KV | IEC61000-4-2 contact discharge | 1 | ||
| EFT IEC61000-4-4 | 40 | A | IEC61000-4-4 (EFT) | 1 | |||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 |
CAD (KiCad official)
- Symbol:
LESD8D7.0CAT5G-HXY - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
759a2dfeedf38437, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LESD8D7.0CAT5G-HXY
**HXY MOSFET** · ESD Protection Devices · DFN1006-2L
LESD8D7.0CAT5G-HXY from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bidirectional ESD protection line terminal (pin 1 of the two-terminal DFN1006-2L); the device is symmetric with VRWM 7.0 V, so either terminal may connect to the protected line or to ground. |
| 2 | 2 | passive | Bidirectional ESD protection line terminal (pin 2 of the two-terminal DFN1006-2L); the device is symmetric with VRWM 7.0 V, so either terminal may connect to the protected line or to ground. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse working voltage | VRWM | | | 7 | V | | 2 |
| Reverse leakage current | IR | | | 1 | uA | @ VRWM | 2 |
| Breakdown voltage | VBR | 7.2 | | | V | @ IT = 1.0 mA | 2 |
| Clamping voltage | VC | | 13 | | V | @ IPP=3 A | 2 |
| Clamping voltage at max IPP | VC | | | 18 | V | @ Max IPP | 2 |
| Peak pulse current | IPP | | | 20 | A | Surge waveform per Figure 2 | 2 |
| Peak pulse power | PPK | | | 360 | W | Surge waveform per Figure 2 | 2 |
| Capacitance | C | | 8 | 9 | pF | | 2 |
| Dynamic resistance | R(dynamic) | | 0.24 | | ohm | @16A (TLP) | 2 |
| Peak Pulse Power | PPP | | | 360 | W | tp = 8/20μs, Tamb=25°C | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 1 |
| Operating Temperature Range | Top | -40 | | 125 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| ESD IEC61000-4-2 air discharge | | -20 | | 20 | KV | IEC61000-4-2 air discharge | 1 |
| ESD IEC61000-4-2 contact discharge | | -15 | | 15 | KV | IEC61000-4-2 contact discharge | 1 |
| EFT IEC61000-4-4 | | | | 40 | A | IEC61000-4-4 (EFT) | 1 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10s | 1 |
## CAD (KiCad official)
- Symbol: `LESD8D7.0CAT5G-HXY`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/lesd8d7-0cat5g-hxy-datasheet.pdf) (4 pp, sha256 `759a2dfeedf38437`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lesd8d7-0cat5g-hxy-datasheet.pdf)