component
LESD8D24CT5G-HXY
Public Made by Adomby adom
HXY MOSFET ESD Protection Devices, DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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LESD8D24CT5G-HXY
HXY MOSFET · ESD Protection Devices · DFN1006-2L
LESD8D24CT5G-HXY from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bi-directional ESD protection line terminal (cathode/anode interchangeable) with 24 V max reverse working voltage, protecting one line against ESD per IEC61000-4-2 (±30 kV air/contact). |
| 2 | 2 | passive | Second terminal of the bi-directional ESD protection diode (connect to ground or the other side of the protected line), with 24 V max reverse working voltage and 300 W peak pulse power (8/20 µs). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse working voltage | VRWM | 24 | V | 2 | |||
| Reverse leakage current | IR | 0.1 | μA | @ VRWM | 2 | ||
| Breakdown voltage | VBR | 25 | V | @ IT = 1mA | 2 | ||
| Clamping voltage | VC | 29.9 | V | @ IPP = 5A | 2 | ||
| Capacitance | C | 15 | 60 | pF | VR=0V, f=1MHz | 2 | |
| Peak pulse power | PPK | 300 | W | 8/20μs | 2 | ||
| Peak pulse power | PPP | 300 | W | tp = 8/20μs, Tamb=25°C | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Operating temperature range | Top | -40 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 ESD air discharge | -30 | 30 | KV | air discharge | 1 | ||
| IEC61000-4-2 ESD contact discharge | -30 | 30 | KV | contact discharge | 1 |
CAD (KiCad official)
- Symbol:
LESD8D24CT5G-HXY - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
lesd8d24ct5g-hxy-etched.step/lesd8d24ct5g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lesd8d24ct5g-hxy.step/lesd8d24ct5g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
a84e33161372f376, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LESD8D24CT5G-HXY
**HXY MOSFET** · ESD Protection Devices · DFN1006-2L
LESD8D24CT5G-HXY from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bi-directional ESD protection line terminal (cathode/anode interchangeable) with 24 V max reverse working voltage, protecting one line against ESD per IEC61000-4-2 (±30 kV air/contact). |
| 2 | 2 | passive | Second terminal of the bi-directional ESD protection diode (connect to ground or the other side of the protected line), with 24 V max reverse working voltage and 300 W peak pulse power (8/20 µs). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse working voltage | VRWM | | | 24 | V | | 2 |
| Reverse leakage current | IR | | | 0.1 | μA | @ VRWM | 2 |
| Breakdown voltage | VBR | 25 | | | V | @ IT = 1mA | 2 |
| Clamping voltage | VC | | | 29.9 | V | @ IPP = 5A | 2 |
| Capacitance | C | | 15 | 60 | pF | VR=0V, f=1MHz | 2 |
| Peak pulse power | PPK | | | 300 | W | 8/20μs | 2 |
| Peak pulse power | PPP | | | 300 | W | tp = 8/20μs, Tamb=25°C | 1 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10s | 1 |
| Storage temperature range | Tstg | -55 | | 150 | °C | | 1 |
| Operating temperature range | Top | -40 | | 125 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| IEC61000-4-2 ESD air discharge | | -30 | | 30 | KV | air discharge | 1 |
| IEC61000-4-2 ESD contact discharge | | -30 | | 30 | KV | contact discharge | 1 |
## CAD (KiCad official)
- Symbol: `LESD8D24CT5G-HXY`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `lesd8d24ct5g-hxy-etched.step` / `lesd8d24ct5g-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lesd8d24ct5g-hxy.step` / `lesd8d24ct5g-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/lesd8d24ct5g-hxy-datasheet.pdf) (4 pp, sha256 `a84e33161372f376`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lesd8d24ct5g-hxy-datasheet.pdf)