component
LDN3408ET1G
Public Made by Adomby adom
LRC MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
ldn3408et1g: specified limits as data (metadata.characteristics, 15 rows from the datasheet)
2 files changed
+210−1
README.md+22@@ -24,6 +24,28 @@ LDN3408ET1G from LRC, in a SOT-23-6. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 30 | V | Ta=25℃ unless otherwise noted | 1 |+| Gate-Source Voltage | VGS | -12 | | 12 | V | Printed as ±12 V | 1 |+| Drain Current-Continuous | ID | | | 2 | A | Ta=25℃ | 1 |+| Drain Current-Pulsed | IDM | | | 8 | A | | 1 |+| Power Dissipation | PD | | | 1.25 | W | Ta=25℃; derate above 25℃ at 10 mW/℃ | 1 |+| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Typical Thermal resistance-Junction to Ambient | RθJA | | 100 | | ℃/W | Junction to ambient, typical as printed | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250μA | 2 |+| Gate Threshold Voltage | VGS(th) | 0.6 | | 1.4 | V | VDS=VGS, ID=250μA | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | | 75 | mΩ | VGS=10V, ID=3A | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 70 | 90 | mΩ | VGS=4.5V, ID=2A | 2 |+| Drain-Source On-State Resistance | RDS(ON) | | 110 | 150 | mΩ | VGS=2.5V, ID=1A | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V, VGS=0V | 2 |+| Gate-Body Leakage Current | IGSS | -10 | | 10 | μA | VGS=±12V, VDS=0V; printed as ±10 | 2 |+| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | VGS=0V, IS=1.0A | 2 |+ ## CAD (KiCad official) - Symbol: `LDN3408ET1G`
page.json+188−1@@ -166,6 +166,193 @@ "Package": "SOT-23-6", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "840fafed1d36a430",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "Ta=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "Printed as ±12 V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "Ta=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "Ta=25℃; derate above 25℃ at 10 mW/℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Typical Thermal resistance-Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 100,+ "max": null,+ "conditions": "Junction to ambient, typical as printed",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.6,+ "typ": null,+ "max": 1.4,+ "conditions": "VDS=VGS, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "VGS=10V, ID=3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 70,+ "max": 90,+ "conditions": "VGS=4.5V, ID=2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 110,+ "max": 150,+ "conditions": "VGS=2.5V, ID=1A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=30V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "μA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VGS=±12V, VDS=0V; printed as ±10",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.2,+ "conditions": "VGS=0V, IS=1.0A",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -207,4 +394,4 @@ "visibility": { "public": true }-}+}