component
LBTP560Y3T1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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LBTP560Y3T1G
LRC · Bipolar (BJT) · SOT-89
LBTP560Y3T1G from LRC, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; emitter-base voltage limited to -7 V (VEBO) with DC current gain 100-300 at VCE=-1 V, IC=-2 A. |
| 2 | C | passive | Collector of the PNP transistor (also the package tab); VCEO -60 V, VCBO -100 V, continuous IC -4.3 A, peak ICM -15 A (tp ≤ 1 ms). |
| 3 | E | passive | Emitter of the PNP transistor, marked with the arrow in the symbol; VEBO -7 V relative to base. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -60 | V | 1 | |||
| Collector-Base Voltage | VCBO | -100 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -7 | V | 1 | |||
| Collector Current, Continuous | IC | -4.3 | A | 1 | |||
| Peak Collector Current | ICM | -15 | A | tp ≤ 1 ms | 1 | ||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | ºC | 1 | ||
| Total Device Dissipation | PD | 550 | mW | FR-4 Board (Note 1), TA = 25ºC; PCB 30.0mm×25.0mm×1.6mm | 1 | ||
| Derate above 25ºC | 4.4 | mW/ºC | above 25ºC | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RΘJA | 225 | ºC/W | 1 | |||
| Collector Cutoff Current | ICBO | -30 | nA | VCB = -80V, IE = 0 | 2 | ||
| Emitter Cutoff Current | IEBO | -30 | nA | VEB = -6 V, IC = 0 | 2 | ||
| Collector-Emitter Cutoff Current | ICEO | -10 | µA | VCE = -60V, IB = 0 | 2 | ||
| Collector-Emitter Breakdown Voltage | VBR(CEO) | -60 | V | IC = -10 mA, IB = 0 | 2 | ||
| Collector-Base Breakdown Voltage | VBR(CBO) | -100 | V | IC = -100 µA, IE = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | VBR(EBO) | -7 | V | IE = -100 µA, IC = 0 | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -14 | -20 | mV | IC = -0.1 A, IB = -10 mA | 2 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -50 | -65 | mV | IC = -1 A, IB = -100 mA | 2 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -75 | -110 | mV | IC = -2 A, IB = -200 mA | 2 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -160 | -240 | mV | IC = -5 A, IB = -500 mA | 2 | |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.95 | -1.05 | V | IC = -5 A, IB = -500 mA | 2 | |
| Base-Emitter Turn-On Voltage | VBE(on) | -0.84 | -0.95 | V | VCE = -1 V, IC = -5 A | 2 |
CAD (KiCad official)
- Symbol:
LBTP560Y3T1G - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
lbtp560y3t1g-etched.step/lbtp560y3t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lbtp560y3t1g.step/lbtp560y3t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (6 pp, sha256
e0f47e3859e431d1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LBTP560Y3T1G
**LRC** · Bipolar (BJT) · SOT-89
LBTP560Y3T1G from LRC, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; emitter-base voltage limited to -7 V (VEBO) with DC current gain 100-300 at VCE=-1 V, IC=-2 A. |
| 2 | C | passive | Collector of the PNP transistor (also the package tab); VCEO -60 V, VCBO -100 V, continuous IC -4.3 A, peak ICM -15 A (tp ≤ 1 ms). |
| 3 | E | passive | Emitter of the PNP transistor, marked with the arrow in the symbol; VEBO -7 V relative to base. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | | | -60 | V | | 1 |
| Collector-Base Voltage | VCBO | | | -100 | V | | 1 |
| Emitter-Base Voltage | VEBO | | | -7 | V | | 1 |
| Collector Current, Continuous | IC | | | -4.3 | A | | 1 |
| Peak Collector Current | ICM | | | -15 | A | tp ≤ 1 ms | 1 |
| Junction and Storage Temperature | TJ,Tstg | -55 | | 150 | ºC | | 1 |
| Total Device Dissipation | PD | | | 550 | mW | FR-4 Board (Note 1), TA = 25ºC; PCB 30.0mm×25.0mm×1.6mm | 1 |
| Derate above 25ºC | | | 4.4 | | mW/ºC | above 25ºC | 1 |
| Thermal Resistance, Junction-to-Ambient | RΘJA | | 225 | | ºC/W | | 1 |
| Collector Cutoff Current | ICBO | | | -30 | nA | VCB = -80V, IE = 0 | 2 |
| Emitter Cutoff Current | IEBO | | | -30 | nA | VEB = -6 V, IC = 0 | 2 |
| Collector-Emitter Cutoff Current | ICEO | | | -10 | µA | VCE = -60V, IB = 0 | 2 |
| Collector-Emitter Breakdown Voltage | VBR(CEO) | -60 | | | V | IC = -10 mA, IB = 0 | 2 |
| Collector-Base Breakdown Voltage | VBR(CBO) | -100 | | | V | IC = -100 µA, IE = 0 | 2 |
| Emitter-Base Breakdown Voltage | VBR(EBO) | -7 | | | V | IE = -100 µA, IC = 0 | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | -14 | -20 | mV | IC = -0.1 A, IB = -10 mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | -50 | -65 | mV | IC = -1 A, IB = -100 mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | -75 | -110 | mV | IC = -2 A, IB = -200 mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | -160 | -240 | mV | IC = -5 A, IB = -500 mA | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | | -0.95 | -1.05 | V | IC = -5 A, IB = -500 mA | 2 |
| Base-Emitter Turn-On Voltage | VBE(on) | | -0.84 | -0.95 | V | VCE = -1 V, IC = -5 A | 2 |
## CAD (KiCad official)
- Symbol: `LBTP560Y3T1G`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `lbtp560y3t1g-etched.step` / `lbtp560y3t1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lbtp560y3t1g.step` / `lbtp560y3t1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590908450475876352) (6 pp, sha256 `e0f47e3859e431d1`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lbtp560y3t1g-datasheet.pdf)