component
LBTN880DPTUG
Public Made by Adomby adom
LRC Bipolar (BJT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLBTN880DPTUG
LRC · Bipolar (BJT) · TO-252
LBTN880DPTUG from LRC, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the NPN silicon power transistor, characterized with base currents of 400 mA and 800 mA at IC = 8 A for VCE(sat) and VBE(sat) respectively. |
| 2 | Collector | passive | Collector terminal rated for 8 A DC collector current and 16 A peak (tp < 5 ms), with VCBO and VCEO of 80 V. |
| 3 | Emitter | passive | Emitter terminal of the NPN transistor, with an emitter-base voltage rating VEBO of 5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | VBR(CEO) | 80 | V | IC = 1 mA, IB = 0 | 2 | ||
| Collector-Base Breakdown Voltage | VBR(CBO) | 80 | V | IC = 100µA, IE = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | VBR(EBO) | 5 | V | IE = 100µA, IC = 0 | 2 | ||
| Collector-Base Cutoff Current | ICBO | 1 | µA | VCB=80V, IE=0 | 2 | ||
| Emitter-Base Cutoff Current | IEBO | 200 | nA | VEB=5V, IC=0 | 2 | ||
| Collector-Emitter Cutoff Current | ICEO | 10 | µA | VCE=80V, IB=0 | 2 | ||
| DC Current Gain | HFE | 60 | 200 | VCE =1V, IC =2A | 2 | ||
| DC Current Gain | HFE | 40 | VCE =1V, IC =4A | 2 | |||
| Base-Emitter saturation voltage | VBE(sat) | 1.5 | V | IC =8A, IB =800 mA | 2 | ||
| Collector-Emitter Voltage | VCEO | 80 | V | 1 | |||
| Collector-Base Voltage | VCBO | 80 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current (DC) | IC | 8 | A | 1 | |||
| Peak collector current | ICM | 16 | A | tp < 5 ms | 1 | ||
| Total Power Dissipation | PD | 1.75 | W | TA = 25°C (Note 1: surface mounted on minimum recommended pad sizes) | 1 | ||
| Junction Temperature | Tj | 150 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RΘJA | 71.4 | °C/W | Surface mounted on minimum recommended pad sizes (Note 1) | 1 |
CAD (KiCad official)
- Symbol:
LBTN880DPTUG - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
lbtn880dptug-etched.step/lbtn880dptug-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lbtn880dptug.step/lbtn880dptug.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (6 pp, sha256
5ef52b8509f93eea, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).