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LBSS84-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LBSS84-HXY

HXY MOSFET · MOSFETs · SOT-23

LBSS84-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the P-channel enhancement MOSFET, with VGS rated ±20 V and RDS(ON) <5 Ω at VGS=-10V.
2 S passive Source of the P-channel MOSFET; VDS is rated -50 V relative to the drain.
3 D passive Drain of the P-channel MOSFET; VDS is -50 V, continuous ID -0.1 A and pulsed IDM -0.5 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -50 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V TA=25℃ 1
Drain Current-Continuous ID -0.1 A TA=25℃ 1
Pulsed Drain Current IDM -0.5 A TA=25℃ 1
Maximum Power Dissipation PD 0.35 TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 ℃/W Junction-to-Ambient (Note 2) 1
Drain-source breakdown voltage V(BR)DSS -50 V VGS=0, ID=250µA 2
Gate threshold voltage VGS(th) -2 -0.8 V VDS=VGS, ID=-250µA 2
Gate-body leakage current IGSS -10 10 µA VDS=0, VGS=±10V 2
Zero gate voltage drain current IDSS -10 µA VDS=-50V, VGS=0V 2
Zero gate voltage drain current IDSS -100 nA VDS=-40V, VGS=0V 2
Drain-source on-resistance RDS(on) 2 5 Ω VGS=-10V, ID=-0.13A 2
Drain-source on-resistance RDS(on) 2.5 6 Ω VGS=-4.5V, ID=-0.13A 2
Diode forward voltage VSD -1 V IS=-0.13A, VGS=0V 2
Forward transconductance gFS 50 mS VDS=-25V, ID=-0.13A 2
Input capacitance Ciss 25 pF VDS=-25V, VGS=0V, f=1MHz 2
Output capacitance Coss 15 pF VDS=-25V, VGS=0V, f=1MHz 2
Reverse transfer capacitance Crss 3.5 pF VDS=-25V, VGS=0V, f=1MHz 2
Turn-on delay time td(on) 16.7 nS VGS=-10V, VDS=-15V, ID=-200mA, RGEN=25Ω 2
Rise time tr 8.6 nS VGS=-10V, VDS=-15V, ID=-200mA, RGEN=25Ω 2
Turn-off delay time td(off) 17.9 nS VGS=-10V, VDS=-15V, ID=-200mA, RGEN=25Ω 2
Fall time tf 5.3 nS VGS=-10V, VDS=-15V, ID=-200mA, RGEN=25Ω 2

CAD (KiCad official)

  • Symbol: LBSS84-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lbss84-hxy-etched.step / lbss84-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lbss84-hxy.step / lbss84-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 46801ca3ccb5b28c, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF