component

LBSS4240LT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LBSS4240LT1G

LRC · Bipolar (BJT) · SOT-23

LBSS4240LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the 40 V, 2 A NPN low-VCE(sat) transistor; the datasheet gives no separate pin limit, so the device limits apply (VCEO 40 V, VEBO 5.0 V, continuous IC 2 A).
2 EMITTER passive Emitter terminal of the NPN transistor, rated with the device maximum ratings of VCEO 40 V and VEBO 5.0 V.
3 COLLECTOR passive Collector terminal of the NPN transistor, rated for continuous collector current of 2 A and VCBO 40 V.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base cut-off current ICBO 100 nA IE = 0; VCB = 30 V 2
Emitter-base cut-off current IEBO 100 nA IC = 0; VEB = 4 V 2
DC current gain hFE 350 IC = 100 mA; VCE = 2 V 2
DC current gain hFE 300 IC = 500 mA; VCE = 2 V 2
DC current gain hFE 150 IC = 2 A; VCE = 2 V 2
Collector-emitter saturation voltage VCEsat 70 mV IC = 100 mA; IB = 1 mA 2
Collector-emitter saturation voltage VCEsat 100 mV IC = 500 mA; IB = 50 mA 2
Collector-emitter saturation voltage VCEsat 180 mV IC = 750 mA; IB = 15 mA 2
Collector-emitter saturation voltage VCEsat 320 mV IC = 2 A; IB = 200 mA; note 1 2
Base-emitter saturation voltage VBEsat 1.1 V IC = 2 A; IB = 200 mA; note 1 2
Base-emitter turn-on voltage VBEon 0.75 V IC = 100 mA; VCE = 2 V 2
Collector capacitance Cc 20 pF IE = Ie = 0; VCB = 10 V; f = 1 MHz 2
Transition frequency fT 100 MHz IC = 100 mA; VCE = 10 V; f = 100 MHz 2
Collector-emitter voltage VCEO 40 V 1
Collector-base voltage VCBO 40 V 1
Emitter-base voltage VEBO 5 V 1
Collector current - continuous IC 2 A 1
Total power dissipation P 0.3 W 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -65 150 °C 1
Thermal resistance from junction to ambient Rth(j-a) 417 K/W in free air; note 1 1
Thermal resistance from junction to ambient Rth(j-a) 260 K/W in free air; note 2 (mounted pad for collector 1 cm²) 1

CAD (KiCad official)

  • Symbol: LBSS4240LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lbss4240lt1g-etched.step / lbss4240lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lbss4240lt1g.step / lbss4240lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (5 pp, sha256 e04ac30e79c6d3d3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF