component
LBSS138WT1G
Public Made by Adomby adom
LRC MOSFETs, SC-70. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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LBSS138WT1G
LRC · MOSFETs · SC-70
LBSS138WT1G from LRC, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-to-source voltage is rated ±20 V continuous with a threshold VGS(th) of 0.5 V to 1.5 V at VDS = VGS, ID = 1.0 mA. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET; drain current is rated 200 mA continuous and 800 mA pulsed (tp ≤ 10 µs). |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated 50 V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SC-70 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 50 | Vdc | 1 | |||
| Gate-to-Source Voltage, Continuous | VGS | -20 | 20 | Vdc | 1 | ||
| Drain Current, Continuous | ID | 200 | mAdc | TA = 25°C | 1 | ||
| Drain Current, Pulsed | IDM | 800 | mAdc | tp ≤ 10 μs | 1 | ||
| Total Device Dissipation, FR-5 Board | PD | 150 | mW | FR-5 board (Note 1) @ TA = 25°C | 1 | ||
| Derate above 25°C | PD | 1.8 | mW/°C | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 556 | °C/W | FR-5 board (Note 1) | 1 | ||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | °C | 1 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C | 10 seconds | 1 | ||
| Drain-Source Breakdown Voltage | VBRDSS | 50 | Vdc | VGS = 0, ID = 250 μAdc | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 0.1 | μAdc | VGS = 20 Vdc | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -0.1 | μAdc | VGS = -20 Vdc | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.5 | 1.5 | Vdc | VDS = VGS, ID = 1.0 mAdc | 2 | |
| Static Drain-Source On-State Resistance | RDS(on) | 5.6 | 10 | Ohms | VGS = 2.75 Vdc, ID < 200 mAdc | 2 | |
| Static Drain-Source On-State Resistance | RDS(on) | 3.5 | Ohms | VGS = 5.0 Vdc, ID = 200 mAdc | 2 | ||
| Forward Transconductance | gfs | 100 | mS | VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz | 2 | ||
| Input Capacitance | Ciss | 40 | 50 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 | |
| Output Capacitance | Coss | 12 | 25 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 3.5 | 5 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 | |
| Turn-On Delay Time | td(on) | 20 | ns | VDD = 30 Vdc, ID = 200 mAdc | 2 | ||
| Turn-Off Delay Time | td(off) | 20 | ns | VDD = 30 Vdc, ID = 200 mAdc | 2 |
CAD (KiCad official)
- Symbol:
LBSS138WT1G - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SC-70 (KiCad packages3D, STEP)
- 3D model files:
lbss138wt1g-etched.step/lbss138wt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lbss138wt1g.step/lbss138wt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (6 pp, sha256
592c3a07b7472ad4, retrieved 2026-11-06, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LBSS138WT1G
**LRC** · MOSFETs · SC-70
LBSS138WT1G from LRC, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-to-source voltage is rated ±20 V continuous with a threshold VGS(th) of 0.5 V to 1.5 V at VDS = VGS, ID = 1.0 mA. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET; drain current is rated 200 mA continuous and 800 mA pulsed (tp ≤ 10 µs). |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated 50 V maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SC-70 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 50 | Vdc | | 1 |
| Gate-to-Source Voltage, Continuous | VGS | -20 | | 20 | Vdc | | 1 |
| Drain Current, Continuous | ID | | | 200 | mAdc | TA = 25°C | 1 |
| Drain Current, Pulsed | IDM | | | 800 | mAdc | tp ≤ 10 μs | 1 |
| Total Device Dissipation, FR-5 Board | PD | | | 150 | mW | FR-5 board (Note 1) @ TA = 25°C | 1 |
| Derate above 25°C | PD | | 1.8 | | mW/°C | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | 556 | | °C/W | FR-5 board (Note 1) | 1 |
| Junction and Storage Temperature | TJ,Tstg | -55 | | 150 | °C | | 1 |
| Maximum Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 10 seconds | 1 |
| Drain-Source Breakdown Voltage | VBRDSS | 50 | | | Vdc | VGS = 0, ID = 250 μAdc | 2 |
| Gate-Body Leakage Current, Forward | IGSSF | | | 0.1 | μAdc | VGS = 20 Vdc | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR | | | -0.1 | μAdc | VGS = -20 Vdc | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | | 1.5 | Vdc | VDS = VGS, ID = 1.0 mAdc | 2 |
| Static Drain-Source On-State Resistance | RDS(on) | | 5.6 | 10 | Ohms | VGS = 2.75 Vdc, ID < 200 mAdc | 2 |
| Static Drain-Source On-State Resistance | RDS(on) | | | 3.5 | Ohms | VGS = 5.0 Vdc, ID = 200 mAdc | 2 |
| Forward Transconductance | gfs | 100 | | | mS | VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz | 2 |
| Input Capacitance | Ciss | | 40 | 50 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 |
| Output Capacitance | Coss | | 12 | 25 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 3.5 | 5 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 |
| Turn-On Delay Time | td(on) | | | 20 | ns | VDD = 30 Vdc, ID = 200 mAdc | 2 |
| Turn-Off Delay Time | td(off) | | | 20 | ns | VDD = 30 Vdc, ID = 200 mAdc | 2 |
## CAD (KiCad official)
- Symbol: `LBSS138WT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SC-70 (KiCad packages3D, STEP)
- 3D model files: `lbss138wt1g-etched.step` / `lbss138wt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lbss138wt1g.step` / `lbss138wt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588903945565843456) (6 pp, sha256 `592c3a07b7472ad4`, retrieved 2026-11-06, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lbss138wt1g-datasheet.pdf)