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LBC858CLT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LBC858CLT1G

LRC · Bipolar (BJT) · SOT-23

LBC858CLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the emitter-base voltage is rated at -5.0 V (VEBO).
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base voltage is limited to -5.0 V (VEBO) and the continuous collector current is rated at -100 mA.
3 COLLECTOR passive Collector terminal of the PNP transistor; the LBC858 collector-emitter voltage is rated at -30 V (VCEO) and the continuous collector current at -100 mA.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage (LBC858, LBC859 Series) V(BR)CEO -30 V IC = -10 mA 3
Collector-Base Breakdown Voltage (LBC858, LBC859 Series) V(BR)CBO -30 V IC = -10 A 3
Emitter-Base Breakdown Voltage (LBC858, LBC859 Series) V(BR)EBO -5 V IE = -1.0 A 3
DC Current Gain (LBC858C) hFE 250 475 800 IC = -2.0 mA, VCE = -5.0 V 3
Base-Emitter On Voltage VBE(on) -0.6 V IC = -2.0 mA, VCE = -5.0 V 3
Base-Emitter On Voltage VBE(on) -0.75 -0.82 V IC = -10 mA, VCE = -5.0 V 3
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = -10 mA, IB = -0.5 mA 3
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V IC = -100 mA, IB = -5.0 mA 3
Base-Emitter Saturation Voltage VBE(sat) -0.7 V IC = -10 mA, IB = -0.5 mA 3
Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC = -100 mA, IB = -5.0 mA 3
Collector Cutoff Current ICBO -15 nA VCB = -30 V 3
Collector Cutoff Current ICBO -4 µA VCB = -30 V, TA = 150°C 3
Current-Gain, Bandwidth Product fT 100 MHz IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz 3
Output Capacitance Cob 4.5 pF VCB = -10 V, f = 1.0 MHz 3
Noise Figure (LBC856, LBC857, LBC858 Series) NF 10 dB IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 3
Collector-Emitter Voltage (LBC858, LBC859) VCEO -30 V 1
Collector-Base Voltage (LBC858, LBC859) VCBO -30 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current, Continuous IC -100 mAdc Continuous 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
ESD Rating, Human Body Model 4000 V Human Body Model (printed as >4000 V) 1
ESD Rating, Machine Model 400 V Machine Model (printed as >400 V) 1
Total Device Dissipation, FR-5 Board PD 225 mW FR-5 Board, TA = 25°C 1
Total Device Dissipation, Alumina Substrate PD 300 mW Alumina Substrate, TA = 25°C 1
Thermal Resistance, Junction to Ambient, FR-5 Board RJA 556 °C/W FR-5 Board 1
Thermal Resistance, Junction to Ambient, Alumina Substrate RJA 417 °C/W Alumina Substrate 1

CAD (KiCad official)

  • Symbol: LBC858CLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lbc858clt1g-etched.step / lbc858clt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lbc858clt1g.step / lbc858clt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (7 pp, sha256 5fef241c37b9cb01, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF