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LBC858ALT1G

Public Made by Adom

by adom

LRC Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LBC858ALT1G

LRC · Bipolar Transistors - BJT · SOT-23

LBC858ALT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the PNP transistor, driven with IB of -0.5 mA to -5.0 mA in the saturation test conditions; the emitter-base breakdown voltage BVEBO is -5 V minimum.
2 EMITTER passive Emitter of the PNP transistor; the datasheet gives an emitter-base breakdown voltage BVEBO of -5 V minimum and an emitter-base voltage VEBO rating of -5 V.
3 COLLECTOR passive Collector of the PNP transistor; the datasheet gives a collector-emitter voltage VCEO of -30 V and a continuous collector current IC of -100 mA.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -30 V 1
Collector-Emitter Voltage VCEO -30 V 1
Emitter-Base Voltage VEBO -5 V 1
Continuous Collector Current IC -100 mA 1
Junction and Storage Temperature TJ, Tstg -55 150 ℃ 1
Total Device Dissipation FR-5 Board PD 225 mW TA = 25°C, FR-5 board (Note 1) 1
Derate above 25°C (FR-5 Board) 1.8 mW/℃ Derate above 25°C, FR-5 board 1
Thermal resistance junction to ambient (FR-5 Board) RθJA 556 ℃/W FR-5 board 1
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C, Alumina Substrate (Note 2) 1
Derate above 25°C (Alumina Substrate) 2.4 mW/℃ Derate above 25°C 1
Thermal resistance junction to ambient (Alumina Substrate) RθJA 417 ℃/W Alumina Substrate 1
Collector-Emitter Breakdown Voltage BVCEO -30 V IC = -10mA 2
Collector-Base Breakdown Voltage BVCBO -30 V IC = -10μA 2
Emitter-Base Breakdown Voltage BVEBO -5 V IE = -1μA 2
Collector Cut-off Current ICBO -15 nA VCB = -30V 2
Collector Cut-off Current ICBO -4 µA VCB = -30 V, TA = 150°C 2
DC Current Gain hFE 125 180 250 IC = -2.0 mA, VCE = -5.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = -10 mA, IB = -0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V IC = -100 mA, IB = -5.0 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC = -100 mA, IB = -5.0 mA 2
Base-Emitter On Voltage VBE(on) -0.6 -0.75 V IC = -2.0 mA, VCE = -5.0 V 2
Base-Emitter On Voltage VBE(on) -0.82 V IC = -10 mA, VCE = -5.0 V 2
Current-Gain Bandwidth Product fT 100 MHz IC = -10 mA, VCE = -5.0 V, f = 100 MHz 2
Output Capacitance Cob 4.5 pF VCB = -10 V, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = -0.2 mA, VCE = -5.0 V, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 2

CAD (KiCad official)

  • Symbol: LBC858ALT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lbc858alt1g-etched.step / lbc858alt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lbc858alt1g.step / lbc858alt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (6 pp, sha256 07c0074a3808d68e, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF