component

LBC857BWT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SC-70. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LBC857BWT1G

LRC · Bipolar (BJT) · SC-70

LBC857BWT1G from LRC, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP general-purpose transistor; for the BC857 series the emitter-base breakdown voltage is -5.0 V minimum at IE = -1.0 µA.
2 EMITTER passive Emitter terminal of the PNP transistor; for the BC857 series the collector-base breakdown voltage is -50 V minimum at IC = -10 µA.
3 COLLECTOR passive Collector terminal of the PNP transistor; the continuous collector current is rated at -100 mA and the BC857 collector-emitter voltage is -45 V.

Key specifications

Parameter Value
Manufacturer LRC
Package SC-70
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V (BR)CEO -45 V IC = -10 mA 1
Collector-Emitter Breakdown Voltage V (BR)CES -50 V IC = -10 µA, VEB = 0 1
Collector-Base Breakdown Voltage V (BR)CBO -50 V IC = -10 µA 1
Emitter-Base Breakdown Voltage V (BR)EBO -5 V IE = -1.0 µA 1
Collector Cutoff Current ICBO -15 nA VCB = -30 V 1
Collector Cutoff Current ICBO -4 µA VCB = -30 V, TA = 150°C 1
DC Current Gain hFE 220 290 475 IC = -2.0 mA, VCE = -5.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = -10 mA, IB = -0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V IC = -100 mA, IB = -5.0 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.7 V IC = -10 mA, IB = -0.5 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC = -100 mA, IB = -5.0 mA 2
Base-Emitter Voltage VBE(on) -0.6 -0.75 V IC = -2.0 mA, VCE = -5.0 V 2
Base-Emitter Voltage VBE(on) -0.82 V IC = -10 mA, VCE = -5.0 V 2
Current-Gain Bandwidth Product fT 100 MHz IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz 2
Output Capacitance Cob 4.5 pF VCB = -10 V, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 2
Collector-Emitter Voltage VCEO -45 V 1
Collector-Base Voltage VCBO -50 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current Continuous IC -100 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation PD 150 mW FR-5 Board, TA = 25°C 1
Thermal Resistance, Junction to Ambient RθJA 833 °C/W 1

CAD (KiCad official)

  • Symbol: LBC857BWT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SC-70 (KiCad packages3D, STEP)
  • 3D model files: lbc857bwt1g-etched.step / lbc857bwt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lbc857bwt1g.step / lbc857bwt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (6 pp, sha256 617dae2c02574622, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF