component
LBC857BLT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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LBC857BLT1G
LRC · Bipolar (BJT) · SOT-23
LBC857BLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet gives no separate base rating, and the emitter-base voltage is limited to -5.0 V (VEBO). |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, with emitter-base voltage limited to -5.0 V (VEBO) and continuous collector current limited to -100 mAdc. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, with collector-emitter voltage of -45 V (VCEO, LBC857 series) and continuous collector current of -100 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (LBC857 Series) | V(BR)CEO | -45 | V | IC = -10 mA | 3 | ||
| Collector-Emitter Breakdown Voltage (LBC857 Series) | V(BR)CES | -50 | V | IC = -10 µA, VEB = 0 | 3 | ||
| Collector-Base Breakdown Voltage (LBC857 Series) | V(BR)CBO | -50 | V | IC = -10 A (as printed) | 3 | ||
| Emitter-Base Breakdown Voltage (LBC857 Series) | V(BR)EBO | -5 | V | IE = -1.0 A (as printed) | 3 | ||
| Collector Cutoff Current | ICBO | -15 | nA | VCB = -30 V | 3 | ||
| Collector Cutoff Current | ICBO | -4 | µA | VCB = -30 V, TA = 150°C | 3 | ||
| DC Current Gain (LBC857B group) | hFE | 180 | 290 | 520 | IC = -2.0 mA, VCE = -5.0 V | 3 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.3 | V | IC = -10 mA, IB = -0.5 mA | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.65 | V | IC = -100 mA, IB = -5.0 mA | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.7 | V | IC = -10 mA, IB = -0.5 mA | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.9 | V | IC = -100 mA, IB = -5.0 mA | 3 | ||
| Base-Emitter On Voltage | VBE(on) | -0.6 | V | IC = -2.0 mA, VCE = -5.0 V | 3 | ||
| Base-Emitter On Voltage | VBE(on) | -0.82 | V | IC = -10 mA, VCE = -5.0 V | 3 | ||
| Current-Gain, Bandwidth Product | fT | 100 | MHz | IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz | 3 | ||
| Output Capacitance | Cob | 4.5 | pF | VCB = -10 V, f = 1.0 MHz | 3 | ||
| Noise Figure (LBC856, LBC857, LBC858 Series) | NF | 10 | dB | IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz | 3 | ||
| Collector-Emitter Voltage (LBC857) | VCEO | -45 | V | Maximum rating, TA = 25°C | 1 | ||
| Collector-Base Voltage (LBC857) | VCBO | -50 | V | Maximum rating, TA = 25°C | 1 | ||
| Emitter-Base Voltage | VEBO | -5 | V | Maximum rating, TA = 25°C | 1 | ||
| Collector Current, Continuous | IC | -100 | mA | Maximum rating, TA = 25°C | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| ESD Rating, Human Body Model | 4000 | V | Printed as >4000 V (HBM) | 1 | |||
| ESD Rating, Machine Model | 400 | V | Printed as >400 V (MM) | 1 | |||
| Total Device Dissipation, FR-5 Board | PD | 225 | mW | TA = 25°C, FR-5 board (Note 1) | 1 | ||
| Derate above 25°C, FR-5 Board | PD | 1.8 | mW/°C | Derate above 25°C, FR-5 board | 1 | ||
| Thermal Resistance, Junction to Ambient, FR-5 Board | RθJA | 556 | °C/W | FR-5 board (Note 1) | 1 | ||
| Total Device Dissipation, Alumina Substrate | PD | 300 | mW | TA = 25°C, alumina substrate (Note 2) | 1 | ||
| Derate above 25°C, Alumina Substrate | PD | 2.4 | mW/°C | Derate above 25°C, alumina substrate | 1 | ||
| Thermal Resistance, Junction to Ambient, Alumina Substrate | RθJA | 417 | °C/W | Alumina substrate (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
LBC857BLT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lbc857blt1g-etched.step/lbc857blt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lbc857blt1g.step/lbc857blt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (7 pp, sha256
04fccabfda9fba52, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LBC857BLT1G
**LRC** · Bipolar (BJT) · SOT-23
LBC857BLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet gives no separate base rating, and the emitter-base voltage is limited to -5.0 V (VEBO). |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, with emitter-base voltage limited to -5.0 V (VEBO) and continuous collector current limited to -100 mAdc. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, with collector-emitter voltage of -45 V (VCEO, LBC857 series) and continuous collector current of -100 mAdc. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (LBC857 Series) | V(BR)CEO | -45 | | | V | IC = -10 mA | 3 |
| Collector-Emitter Breakdown Voltage (LBC857 Series) | V(BR)CES | -50 | | | V | IC = -10 µA, VEB = 0 | 3 |
| Collector-Base Breakdown Voltage (LBC857 Series) | V(BR)CBO | -50 | | | V | IC = -10 A (as printed) | 3 |
| Emitter-Base Breakdown Voltage (LBC857 Series) | V(BR)EBO | -5 | | | V | IE = -1.0 A (as printed) | 3 |
| Collector Cutoff Current | ICBO | | | -15 | nA | VCB = -30 V | 3 |
| Collector Cutoff Current | ICBO | | | -4 | µA | VCB = -30 V, TA = 150°C | 3 |
| DC Current Gain (LBC857B group) | hFE | 180 | 290 | 520 | | IC = -2.0 mA, VCE = -5.0 V | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.3 | V | IC = -10 mA, IB = -0.5 mA | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.65 | V | IC = -100 mA, IB = -5.0 mA | 3 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.7 | V | IC = -10 mA, IB = -0.5 mA | 3 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -0.9 | V | IC = -100 mA, IB = -5.0 mA | 3 |
| Base-Emitter On Voltage | VBE(on) | -0.6 | | | V | IC = -2.0 mA, VCE = -5.0 V | 3 |
| Base-Emitter On Voltage | VBE(on) | | | -0.82 | V | IC = -10 mA, VCE = -5.0 V | 3 |
| Current-Gain, Bandwidth Product | fT | 100 | | | MHz | IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz | 3 |
| Output Capacitance | Cob | | | 4.5 | pF | VCB = -10 V, f = 1.0 MHz | 3 |
| Noise Figure (LBC856, LBC857, LBC858 Series) | NF | | | 10 | dB | IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz | 3 |
| Collector-Emitter Voltage (LBC857) | VCEO | -45 | | | V | Maximum rating, TA = 25°C | 1 |
| Collector-Base Voltage (LBC857) | VCBO | -50 | | | V | Maximum rating, TA = 25°C | 1 |
| Emitter-Base Voltage | VEBO | -5 | | | V | Maximum rating, TA = 25°C | 1 |
| Collector Current, Continuous | IC | -100 | | | mA | Maximum rating, TA = 25°C | 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |
| ESD Rating, Human Body Model | | 4000 | | | V | Printed as >4000 V (HBM) | 1 |
| ESD Rating, Machine Model | | 400 | | | V | Printed as >400 V (MM) | 1 |
| Total Device Dissipation, FR-5 Board | PD | | | 225 | mW | TA = 25°C, FR-5 board (Note 1) | 1 |
| Derate above 25°C, FR-5 Board | PD | | 1.8 | | mW/°C | Derate above 25°C, FR-5 board | 1 |
| Thermal Resistance, Junction to Ambient, FR-5 Board | RθJA | | | 556 | °C/W | FR-5 board (Note 1) | 1 |
| Total Device Dissipation, Alumina Substrate | PD | | | 300 | mW | TA = 25°C, alumina substrate (Note 2) | 1 |
| Derate above 25°C, Alumina Substrate | PD | | 2.4 | | mW/°C | Derate above 25°C, alumina substrate | 1 |
| Thermal Resistance, Junction to Ambient, Alumina Substrate | RθJA | | | 417 | °C/W | Alumina substrate (Note 2) | 1 |
## CAD (KiCad official)
- Symbol: `LBC857BLT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `lbc857blt1g-etched.step` / `lbc857blt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lbc857blt1g.step` / `lbc857blt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586182701049393152) (7 pp, sha256 `04fccabfda9fba52`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lbc857blt1g-datasheet.pdf)