component

LBC848CLT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LBC848CLT1G

LRC · Bipolar (BJT) · SOT-23

LBC848CLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the LBC848C NPN transistor; for the LBC848 series the datasheet rates the emitter-base voltage VEBO at 5.0 Vdc and the continuous collector current IC at 100 mAdc.
2 EMITTER passive Emitter terminal of the LBC848C NPN transistor; the datasheet limits the emitter-base voltage VEBO to 5.0 Vdc for the LBC848 series.
3 COLLECTOR passive Collector terminal of the LBC848C NPN transistor; for the LBC848 series the datasheet rates VCEO at 30 Vdc and VCBO at 30 Vdc, with continuous collector current IC of 100 mAdc.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage (LBC848A,B,C) V(BR)CEO 30 V IC = 10 mA 3
Collector-Base Breakdown Voltage (LBC848A,B,C) V(BR)CBO 30 V IC = 10 A 3
Emitter-Base Breakdown Voltage (LBC848A,B,C) V(BR)EBO 5 V IE = 1.0 A 3
Collector Cutoff Current ICBO 15 nA VCB = 30 V 3
Collector Cutoff Current ICBO 5 µA VCB = 30 V, TA = 150°C 3
DC Current Gain (LBC848C) hFE 220 450 800 IC = 2.0 mA, VCE = 5.0 V 3
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC = 10 mA, IB = 0.5 mA 3
Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC = 100 mA, IB = 5.0 mA 3
Base-Emitter Saturation Voltage VBE(sat) 0.7 V IC = 10 mA, IB = 0.5 mA 3
Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC = 100 mA, IB = 5.0 mA 3
Base-Emitter Voltage VBE(on) 580 660 mV IC = 2.0 mA, VCE = 5.0 V 3
Base-Emitter Voltage VBE(on) 700 770 mV IC = 10 mA, VCE = 5.0 V 3
Current-Gain, Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz 3
Output Capacitance Cobo 4.5 pF VCB = 10 V, f = 1.0 MHz 3
Noise Figure (LBC848A,B,C) NF 10 dB IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 3
Collector-Emitter Voltage (LBC848) VCEO 30 Vdc 1
Collector-Base Voltage (LBC848) VCBO 30 Vdc 1
Emitter-Base Voltage (LBC848) VEBO 5 Vdc 1
Collector Current, Continuous IC 100 mAdc 1
Total Device Dissipation (FR-5 Board) PD 225 mW TA = 25°C, FR-5 Board (Note 1) 1
Total Device Dissipation (Alumina Substrate) PD 300 mW TA = 25°C, Alumina Substrate (Note 2) 1
Thermal Resistance, Junction to Ambient (FR-5 Board) RJA 556 °C/W Note 1 1
Thermal Resistance, Junction to Ambient (Alumina Substrate) RJA 417 °C/W Note 2 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: LBC848CLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lbc848clt1g-etched.step / lbc848clt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lbc848clt1g.step / lbc848clt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (13 pp, sha256 57a5cceadca3ce14, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF