component
LBC848BWT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SC-70. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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LBC848BWT1G
LRC · Bipolar (BJT) · SC-70
LBC848BWT1G from LRC, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the NPN transistor; collector-base and collector-emitter breakdown are rated 30 V and emitter-base voltage is limited to 5 Vdc. |
| 2 | EMITTER | passive | Emitter of the NPN transistor; emitter-base voltage is limited to 5 Vdc maximum. |
| 3 | COLLECTOR | passive | Collector of the NPN transistor; VCEO and VCBO are 30 Vdc and continuous collector current is 100 mAdc maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SC-70 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (IC = 10 mA) | V(BR)CEO | 30 | V | IC = 10 mA | 2 | ||
| Collector-Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) | V(BR)CES | 30 | V | IC = 10 µA, VEB = 0 | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 30 | V | IC = 10 µA | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE = 1.0 µA | 2 | ||
| Collector Cutoff Current | ICBO | 15 | nA | VCB = 30 V | 2 | ||
| Collector Cutoff Current | ICBO | 5 | µA | VCB = 30 V, TA = 150°C | 2 | ||
| DC Current Gain | hFE | 200 | 290 | 450 | IC = 2.0 mA, VCE = 5.0 V | 2 | |
| Base-Emitter Voltage | VBE(on) | 580 | 660 | 700 | mV | IC = 2.0 mA, VCE = 5.0 V | 2 |
| Base-Emitter Voltage | VBE(on) | 770 | mV | IC = 10 mA, VCE = 5.0 V | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V | IC = 10 mA, IB = 0.5 mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.6 | V | IC = 100 mA, IB = 5.0 mA | 2 | ||
| Current-Gain, Bandwidth Product | fT | 100 | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | 2 | ||
| Output Capacitance | Cobo | 4.5 | pF | VCB = 10 V, f = 1.0 MHz | 2 | ||
| Noise Figure | NF | 10 | dB | IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz | 2 | ||
| Collector-Base Voltage | VCBO | 30 | Vdc | Ta = 25ºC | 1 | ||
| Collector-Emitter Voltage | VCEO | 30 | Vdc | Ta = 25ºC | 1 | ||
| Emitter-Base Voltage | VEBO | 5 | Vdc | Ta = 25ºC | 1 | ||
| Collector Current (Continuous) | IC | 100 | mAdc | Ta = 25ºC | 1 | ||
| Total Device Dissipation | PD | 150 | mW | Ta = 25ºC | 1 | ||
| Junction temperature | TJ | 150 | ºC | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 833 | ºC/W | 1 |
CAD (KiCad official)
- Symbol:
LBC848BWT1G - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SC-70 (KiCad packages3D, STEP)
- 3D model files:
lbc848bwt1g-etched.step/lbc848bwt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lbc848bwt1g.step/lbc848bwt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (5 pp, sha256
01bcb13336313caf, retrieved 2026-11-06, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).