component

LBC848ALT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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LBC848ALT1G

LRC · Bipolar (BJT) · SOT-23

LBC848ALT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; the LBC848 series is rated for an emitter-base voltage (VEBO) of 5.0 V maximum.
2 EMITTER passive Emitter terminal of the NPN transistor; the LBC848 series is rated for a collector-emitter voltage (VCEO) of 30 V and a collector-base voltage (VCBO) of 30 V.
3 COLLECTOR passive Collector terminal of the NPN transistor; the LBC848 series is rated for a continuous collector current (IC) of 100 mA maximum.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage (LBC848) VCEO 30 Vdc 1
Collector-Base Voltage (LBC848) VCBO 30 Vdc 1
Emitter-Base Voltage (LBC848) VEBO 5 Vdc 1
Collector Current, Continuous IC 100 mAdc 1
Total Device Dissipation FR-5 Board PD 225 mW TA = 25°C 1
Thermal Resistance, Junction to Ambient (FR-5 Board, Note 1) RJA 556 °C/W 1
Total Device Dissipation Alumina Substrate (Note 2) PD 300 mW TA = 25°C 1
Thermal Resistance, Junction to Ambient (Alumina Substrate, Note 2) RJA 417 °C/W 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Collector-Emitter Breakdown Voltage (LBC848A,B,C, LBC849B,C) V(BR)CEO 30 V IC = 10 mA 3
Collector-Base Breakdown Voltage (LBC848A,B,C, LBC849B,C) V(BR)CBO 30 V IC = 10 A 3
Emitter-Base Breakdown Voltage (LBC848A,B,C, LBC849B,C) V(BR)EBO 5 V IE = 1.0 A 3
Collector Cutoff Current ICBO 15 nA VCB = 30 V 3
Collector Cutoff Current ICBO 5 µA VCB = 30 V, TA = 150°C 3
DC Current Gain (LBC848A) hFE 110 200 420 IC = 2.0 mA, VCE = 5.0 V 3
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC = 10 mA, IB = 0.5 mA 3
Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC = 100 mA, IB = 5.0 mA 3
Base-Emitter Saturation Voltage VBE(sat) 0.7 V IC = 10 mA, IB = 0.5 mA 3
Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC = 100 mA, IB = 5.0 mA 3
Base-Emitter Voltage VBE(on) 580 660 mV IC = 2.0 mA, VCE = 5.0 V 3
Base-Emitter Voltage VBE(on) 700 770 mV IC = 10 mA, VCE = 5.0 V 3
Current-Gain, Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz 3
Output Capacitance Cobo 4.5 pF VCB = 10 V, f = 1.0 MHz 3
Noise Figure (LBC848A,B,C) NF 10 dB IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 3

CAD (KiCad official)

  • Symbol: LBC848ALT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lbc848alt1g-etched.step / lbc848alt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lbc848alt1g.step / lbc848alt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (13 pp, sha256 cb562894110d7423, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF