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Contents

README

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LBC847BLT1G

LRC · Bipolar (BJT) · SOT-23

LBC847BLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN silicon transistor; the datasheet gives base-emitter on-voltage VBE(on) of 580 mV to 770 mV across its listed test conditions and emitter-base voltage VEBO of 6.0 V for the LBC847 variant.
2 EMITTER passive Emitter terminal of the NPN transistor; the absolute maximum emitter-base voltage is 6.0 V for LBC847 and the device continuous collector current rating is 100 mAdc.
3 COLLECTOR passive Collector terminal of the NPN transistor; the maximum collector-emitter voltage VCEO is 45 V for LBC847 and the continuous collector current is rated at 100 mAdc.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector–Emitter Voltage (LBC847 column) VCEO 45 Vdc 1
Collector–Base Voltage (LBC847 column) VCBO 50 Vdc 1
Emitter–Base Voltage (LBC847 column) VEBO 6 Vdc 1
Collector Current – Continuous IC 100 mAdc 1
Total Device Dissipation, FR-5 Board PD 225 mW TA = 25°C (Note 1) 1
Derate above 25°C, FR-5 Board PD 1.8 mW/°C Derate above 25°C (Note 1) 1
Thermal Resistance, Junction to Ambient, FR-5 Board RJA 556 °C/W Note 1 1
Total Device Dissipation, Alumina Substrate PD 300 mW TA = 25°C (Note 2) 1
Derate above 25°C, Alumina Substrate PD 2.4 mW/°C Derate above 25°C (Note 2) 1
Thermal Resistance, Junction to Ambient, Alumina Substrate RJA 417 °C/W Note 2 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Collector–Emitter Breakdown Voltage (LBC847A,B,C column) V(BR)CEO 45 V IC = 10 mA 3
Collector–Emitter Breakdown Voltage (LBC847 column) V(BR)CES 50 V IC = 10 µA, VEB = 0 3
Collector–Base Breakdown Voltage (LBC847 column) V(BR)CBO 50 V IC = 10 A (as printed) 3
Emitter–Base Breakdown Voltage (LBC847 column) V(BR)EBO 6 V IE = 1.0 A (as printed) 3
Collector Cutoff Current ICBO 15 nA VCB = 30 V 3
Collector Cutoff Current ICBO 5 µA VCB = 30 V, TA = 150°C 3
DC Current Gain (LBC847B column) hFE 180 290 520 IC = 2.0 mA, VCE = 5.0 V 3
Collector–Emitter Saturation Voltage VCE(sat) 0.25 V IC = 10 mA, IB = 0.5 mA 3
Collector–Emitter Saturation Voltage VCE(sat) 0.6 V IC = 100 mA, IB = 5.0 mA 3
Base–Emitter Saturation Voltage VBE(sat) 0.7 V IC = 10 mA, IB = 0.5 mA 3
Base–Emitter Saturation Voltage VBE(sat) 0.9 V IC = 100 mA, IB = 5.0 mA 3
Base–Emitter Voltage VBE(on) 580 660 700 mV IC = 2.0 mA, VCE = 5.0 V 3
Base–Emitter Voltage VBE(on) 770 mV IC = 10 mA, VCE = 5.0 V 3
Current–Gain – Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz 3
Output Capacitance Cobo 4.5 pF VCB = 10 V, f = 1.0 MHz 3
Noise Figure (LBC847A,B,C group) NF 10 dB IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 3

CAD (KiCad official)

  • Symbol: LBC847BLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: lbc847blt1g-etched.step / lbc847blt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lbc847blt1g.step / lbc847blt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (13 pp, sha256 a2073d8a5b399f44, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF