# LBC847AWT1G

**LRC** · Bipolar Transistors - BJT · SC-70

LBC847AWT1G from LRC, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN general-purpose transistor; base current controls the collector current. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor, shared return for base and collector currents. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; maximum continuous collector current is 100 mAdc. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SC-70 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V (BR)CEO | 45 |  |  | V | IC = 10 mA | 1 |
| Collector-Emitter Breakdown Voltage | V (BR)CES | 50 |  |  | V | IC = 10 µA, VEB = 0 | 1 |
| Collector-Base Breakdown Voltage | V (BR)CBO | 50 |  |  | V | IC = 10 µA | 1 |
| Emitter-Base Breakdown Voltage | V (BR)EBO | 6 |  |  | V | IE = 1.0 µA | 1 |
| Collector Cutoff Current | I CBO |  |  | 15 | nA | VCB = 30 V | 1 |
| Collector Cutoff Current | I CBO |  |  | 5 | µA | VCB = 30 V, TA = 150°C | 1 |
| DC Current Gain | hFE | 110 | 180 | 220 |  | IC = 2.0 mA, VCE = 5.0 V | 2 |
| Collector-Emitter Saturation Voltage | V CE(sat) |  |  | 0.25 | V | IC = 10 mA, IB = 0.5 mA | 2 |
| Collector-Emitter Saturation Voltage | V CE(sat) |  |  | 0.6 | V | IC = 100 mA, IB = 5.0 mA | 2 |
| Base-Emitter Voltage | V BE(on) | 580 | 660 | 700 | mV | IC = 2.0 mA, VCE = 5.0 V | 2 |
| Base-Emitter Voltage | V BE(on) |  |  | 770 | mV | IC = 10 mA, VCE = 5.0 V | 2 |
| Current-Gain, Bandwidth Product | f T | 100 |  |  | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | 2 |
| Output Capacitance | Cobo |  |  | 4.5 | pF | VCB = 10 V, f = 1.0 MHz | 2 |
| Noise Figure | NF |  |  | 10 | dB | IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz | 2 |
| Noise Figure | NF |  |  | 4 | dB | IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz | 2 |
| Collector-Emitter Voltage | V CEO |  |  | 45 | V |  | 1 |
| Collector-Base Voltage | V CBO |  |  | 50 | V |  | 1 |
| Emitter-Base Voltage | V EBO |  |  | 6 | V |  | 1 |
| Collector Current, Continuous | I C |  |  | 100 | mAdc |  | 1 |
| Total Device Dissipation | P D |  |  | 150 | mW | FR-5 board, 1.0 x 0.75 x 0.062 in (footnote 1) | 1 |
| Thermal Resistance, Junction to Ambient | R θJA |  |  | 833 | °C/W |  | 1 |
| Junction and Storage Temperature | T J , T stg | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `LBC847AWT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SC-70 (KiCad packages3D, STEP)
- 3D model files: `lbc847awt1g-etched.step` / `lbc847awt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lbc847awt1g.step` / `lbc847awt1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [LRC datasheet](docs/lbc847awt1g-datasheet.pdf) (9 pp, sha256 `cba2338a86bb3344`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/lbc847awt1g-datasheet.pdf)