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LBC846BWT1G

LRC · Bipolar (BJT) · SC-70

LBC846BWT1G from LRC, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN general-purpose transistor; the device maximum continuous collector current is 100 mAdc.
2 EMITTER passive Emitter terminal of the NPN general-purpose transistor; the emitter-base breakdown voltage is 6.0 V minimum for the LBC846 series at IE = 1.0 µA.
3 COLLECTOR passive Collector terminal of the NPN general-purpose transistor; the collector-emitter voltage V(CEO) is 65 V for the LBC846 series.

Key specifications

Parameter Value
Manufacturer LRC
Package SC-70
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 65 V IC = 10 mA 1
Collector-Emitter Breakdown Voltage (VEB = 0) V(BR)CES 80 V IC = 10 µA, VEB = 0 1
Collector-Base Breakdown Voltage V(BR)CBO 80 V IC = 10 µA 1
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE = 1.0 µA 1
Collector Cutoff Current ICBO 15 nA VCB = 30 V 1
Collector Cutoff Current ICBO 5 µA VCB = 30 V, TA = 150°C 1
DC Current Gain hFE 200 290 450 IC = 2.0 mA, VCE = 5.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC = 10 mA, IB = 0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC = 100 mA, IB = 5.0 mA 2
Base-Emitter Voltage VBE(on) 580 660 700 mV IC = 2.0 mA, VCE = 5.0 V 2
Base-Emitter Voltage VBE(on) 770 mV IC = 10 mA, VCE = 5.0 V 2
Current-Gain, Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz 2
Output Capacitance Cobo 4.5 pF VCB = 10 V, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 2
Noise Figure NF 4 dB IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 2
Collector-Emitter Voltage (BC846 column) VCEO 65 V 1
Collector-Base Voltage (BC846 column) VCBO 80 V 1
Emitter-Base Voltage (BC846 column) VEBO 6 V 1
Collector Current, Continuous IC 100 mAdc 1
Total Device Dissipation PD 150 mW 1
Thermal Resistance, Junction to Ambient RθJA 833 °C/W 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: LBC846BWT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SC-70 (KiCad packages3D, STEP)
  • 3D model files: lbc846bwt1g-etched.step / lbc846bwt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lbc846bwt1g.step / lbc846bwt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (9 pp, sha256 77a69df87971599f, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF