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LBC846AWT1G

Public Made by Adom

by adom

LRC Bipolar Transistors - BJT, SC-70. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorlbc846awt1gfactory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

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PCB Footprint

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Datasheet

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Contents

README

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LBC846AWT1G

LRC · Bipolar Transistors - BJT · SC-70

LBC846AWT1G from LRC, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN general-purpose transistor, which controls collector current.
2 EMITTER passive Emitter terminal of the NPN transistor; the datasheet gives emitter-base breakdown voltage of 6.0 V minimum for the A/B types.
3 COLLECTOR passive Collector terminal of the NPN transistor; continuous collector current is rated 100 mAdc.

Key specifications

Parameter Value
Manufacturer LRC
Package SC-70
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 65 V IC = 10 mA 1
Collector-Emitter Breakdown Voltage V(BR)CES 80 V IC = 10 µA, VEB = 0 1
Collector-Base Breakdown Voltage V(BR)CBO 80 V IC = 10 µA 1
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE = 1.0 µA 1
Collector Cutoff Current ICBO 15 nA VCB = 30 V 1
Collector Cutoff Current ICBO 5 µA VCB = 30 V, TA = 150°C 1
DC Current Gain hFE 110 180 220 IC = 2.0 mA, VCE = 5.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC = 10 mA, IB = 0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC = 100 mA, IB = 5.0 mA 2
Base-Emitter Voltage VBE(on) 580 660 700 mV IC = 2.0 mA, VCE = 5.0 V 2
Base-Emitter Voltage VBE(on) 770 mV IC = 10 mA, VCE = 5.0 V 2
Current-Gain, Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz 2
Output Capacitance Cobo 4.5 pF VCB = 10 V, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 2
Collector-Emitter Voltage VCEO 65 V 1
Collector-Base Voltage VCBO 80 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current, Continuous IC 100 mAdc 1
Total Device Dissipation PD 150 mW 1
Thermal Resistance, Junction to Ambient RθJA 833 °C/W 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: LBC846AWT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SC-70 (KiCad packages3D, STEP)
  • 3D model files: lbc846awt1g-etched.step / lbc846awt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); lbc846awt1g.step / lbc846awt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (9 pp, sha256 bc8b495b3c6c89f3, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF