component
LBC807-16LT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLBC807-16LT1G
LRC · Bipolar (BJT) · SOT-23
LBC807-16LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; the datasheet gives no separate pin limit for this terminal, and the device is rated for a collector current of -500 mA with a collector-emitter voltage of -45 V (VCEO max). |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base voltage is rated at -5.0 V and the junction and storage temperature range is -55 to +150 °C. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, rated for a continuous collector current of -500 mA and a collector-emitter voltage of -45 V (VCEO max). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 | V | IC = -10 mA | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CES | -50 | V | VEB = 0, IC = -10 µA | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE = -1.0 µA | 2 | ||
| Collector Cutoff Current | ICBO | -100 | nA | VCB = -20 V | 2 | ||
| Collector Cutoff Current | ICBO | -5 | µA | VCB = -20 V, TJ = 150°C | 2 | ||
| DC Current Gain (LBC807-16 bin) | hFE | 100 | 250 | IC = -100 mA, VCE = -1.0 V | 2 | ||
| DC Current Gain | hFE | 40 | IC = -500 mA, VCE = -1.0 V | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.7 | V | IC = -500 mA, IB = -50 mA | 2 | ||
| Base-Emitter On Voltage | VBE(on) | -1.2 | V | IC = -500 mA, VCE = -1.0 V | 2 | ||
| Current-Gain, Bandwidth Product | fT | 100 | MHz | IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz | 2 | ||
| Collector-Emitter Voltage | VCEO | -45 | V | 1 | |||
| Collector-Base Voltage | VCBO | -50 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current, Continuous | IC | -500 | mAdc | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW | FR-5 board, TA = 25°C | 1 | ||
| Derate above 25°C (FR-5 Board) | PD | 1.8 | mW/°C | FR-5 board, derate above 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient (FR-5 Board) | RθJA | 556 | °C/W | FR-5 board | 1 | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | Alumina substrate, TA = 25°C | 1 | ||
| Derate above 25°C (Alumina Substrate) | PD | 2.4 | mW/°C | Alumina substrate, derate above 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RθJA | 417 | °C/W | Alumina substrate | 1 |
CAD (KiCad official)
- Symbol:
LBC807-16LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
lbc807-16lt1g-etched.step/lbc807-16lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lbc807-16lt1g.step/lbc807-16lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (10 pp, sha256
79e1c1a3de21f17e, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).