component
LBAS316T1G
Public Made by Adomby adom
LRC Switching Diodes, SOD-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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LBAS316T1G
LRC · Switching Diodes · SOD-323
LBAS316T1G from LRC, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CATHODE | passive | Cathode terminal of the high-speed switching diode; continuous reverse voltage is max. 75 V and repetitive peak reverse voltage is max. 100 V. |
| 2 | ANODE | passive | Anode terminal of the high-speed switching diode; continuous forward current is max. 250 mA and repetitive peak forward current is max. 500 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOD-323 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | 715 | mV | see Fig.2; I F = 1 mA | 1 | ||
| Forward voltage | VF | 855 | mV | see Fig.2; I F = 10 mA | 1 | ||
| Forward voltage | VF | 1 | V | see Fig.2; I F =50 mA | 1 | ||
| Forward voltage | VF | 1.25 | V | see Fig.2; I F = 150 mA | 1 | ||
| Reverse current | IR | 30 | nA | see Fig.4; V R = 25 V | 1 | ||
| Reverse current | IR | 1 | µA | see Fig.4; V R =75 V | 1 | ||
| Reverse current | IR | 30 | µA | V R = 25 V; T j = 150 °C | 1 | ||
| Reverse current | IR | 50 | µA | V R = 75 V; T j = 150 °C | 1 | ||
| Diode capacitance | Cd | 2 | pF | f = 1 MHz; V R = 0; see Fig.5 | 1 | ||
| Reverse recovery time | trr | 4 | ns | when switched from I F =10mA to I R = 10mA; R L = 100 Ω; measured at I R = 1 mA; see Fig.6 | 1 | ||
| Forward recovery voltage | Vfr | 1.75 | V | when switched from IF = 10 mA; tr = 20 ns; see Fig.7 | 1 | ||
| Repetitive peak reverse voltage | VRRM | 100 | V | 2 | |||
| Continuous reverse voltage | VR | 75 | V | 2 | |||
| Continuous forward current | IF | 250 | mA | 2 | |||
| Repetitive peak forward current | IFRM | 500 | mA | 2 | |||
| Non-repetitive peak forward current | IFSM | 5 | A | square wave; T j =25°C prior to surge; see Fig.3; t = 1 µs | 2 | ||
| Non-repetitive peak forward current | IFSM | 1 | A | square wave; T j =25°C prior to surge; see Fig.3; t = 1 ms | 2 | ||
| Non-repetitive peak forward current | IFSM | 0.5 | A | square wave; T j =25°C prior to surge; see Fig.3; t = 1 s | 2 | ||
| Total power dissipation | Ptot | 200 | mW | 2 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Junction temperature | Tj | 150 | °C | 2 | |||
| RMS reverse voltage | VR(RMS) | 53 | V | 2 | |||
| Thermal resistance junction to ambient air | RJA | 625 | C/W | 2 |
CAD (KiCad official)
- Symbol:
LBAS316T1G - Footprint:
Diode_SMD:D_SOD-323 - 3D model: SOD-323 (KiCad packages3D, STEP)
- 3D model files:
lbas316t1g-etched.step/lbas316t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lbas316t1g.step/lbas316t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (4 pp, sha256
bf0c1ffdb7dcc9d7, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# LBAS316T1G
**LRC** · Switching Diodes · SOD-323
LBAS316T1G from LRC, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CATHODE | passive | Cathode terminal of the high-speed switching diode; continuous reverse voltage is max. 75 V and repetitive peak reverse voltage is max. 100 V. |
| 2 | ANODE | passive | Anode terminal of the high-speed switching diode; continuous forward current is max. 250 mA and repetitive peak forward current is max. 500 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOD-323 |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | | | 715 | mV | see Fig.2; I F = 1 mA | 1 |
| Forward voltage | VF | | | 855 | mV | see Fig.2; I F = 10 mA | 1 |
| Forward voltage | VF | | | 1 | V | see Fig.2; I F =50 mA | 1 |
| Forward voltage | VF | | | 1.25 | V | see Fig.2; I F = 150 mA | 1 |
| Reverse current | IR | | | 30 | nA | see Fig.4; V R = 25 V | 1 |
| Reverse current | IR | | | 1 | µA | see Fig.4; V R =75 V | 1 |
| Reverse current | IR | | | 30 | µA | V R = 25 V; T j = 150 °C | 1 |
| Reverse current | IR | | | 50 | µA | V R = 75 V; T j = 150 °C | 1 |
| Diode capacitance | Cd | | | 2 | pF | f = 1 MHz; V R = 0; see Fig.5 | 1 |
| Reverse recovery time | trr | | | 4 | ns | when switched from I F =10mA to I R = 10mA; R L = 100 Ω; measured at I R = 1 mA; see Fig.6 | 1 |
| Forward recovery voltage | Vfr | | | 1.75 | V | when switched from IF = 10 mA; tr = 20 ns; see Fig.7 | 1 |
| Repetitive peak reverse voltage | VRRM | | | 100 | V | | 2 |
| Continuous reverse voltage | VR | | | 75 | V | | 2 |
| Continuous forward current | IF | | | 250 | mA | | 2 |
| Repetitive peak forward current | IFRM | | | 500 | mA | | 2 |
| Non-repetitive peak forward current | IFSM | | | 5 | A | square wave; T j =25°C prior to surge; see Fig.3; t = 1 µs | 2 |
| Non-repetitive peak forward current | IFSM | | | 1 | A | square wave; T j =25°C prior to surge; see Fig.3; t = 1 ms | 2 |
| Non-repetitive peak forward current | IFSM | | | 0.5 | A | square wave; T j =25°C prior to surge; see Fig.3; t = 1 s | 2 |
| Total power dissipation | Ptot | | | 200 | mW | | 2 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 2 |
| Junction temperature | Tj | | | 150 | °C | | 2 |
| RMS reverse voltage | VR(RMS) | | | 53 | V | | 2 |
| Thermal resistance junction to ambient air | RJA | | | 625 | C/W | | 2 |
## CAD (KiCad official)
- Symbol: `LBAS316T1G`
- Footprint: `Diode_SMD:D_SOD-323`
- 3D model: SOD-323 (KiCad packages3D, STEP)
- 3D model files: `lbas316t1g-etched.step` / `lbas316t1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `lbas316t1g.step` / `lbas316t1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586185631747334144) (4 pp, sha256 `bf0c1ffdb7dcc9d7`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/lbas316t1g-datasheet.pdf)