component
L99ASC03GTR
Public Made by Adomby adom
STMicroelectronics Motor Driver ICs, TQFP-48-EP(7x7). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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L99ASC03GTR
STMicroelectronics · Motor Driver ICs · TQFP-48-EP(7x7)
L99ASC03GTR from STMicroelectronics, in a TQFP-48-EP(7x7). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SL3 | bidirectional | Source of external low-side MOSFET 3. |
| 2 | CSI+ | input | Current-sense amplifier positive input. |
| 3 | CSI- | input | Current-sense amplifier negative input. |
| 4 | SGND2 | power_in | Signal ground 2. |
| 5 | CSO | output | Current-sense amplifier output. |
| 6 | IL3 | input | Input of low-side switch 3, one input per gate driver with cross-current protection. |
| 7 | IH3 | input | Input of high-side switch 3, one input per gate driver with cross-current protection. |
| 8 | IL2 | input | Input of low-side switch 2, one input per gate driver with cross-current protection. |
| 9 | IH2 | input | Input of high-side switch 2, one input per gate driver with cross-current protection. |
| 10 | IL1 | input | Input of low-side switch 1, one input per gate driver with cross-current protection. |
| 11 | IH1 | input | Input of high-side switch 1, one input per gate driver with cross-current protection. |
| 12 | SGND1 | power_in | Signal ground 1. |
| 13 | SDI | input | SPI serial data input, latched on the rising edge of SCK. |
| 14 | SCK | input | SPI clock input. |
| 15 | SDO | output | SPI serial data output, shifted out on the falling edge of SCK and high impedance when CSN is high. |
| 16 | CSN | input | SPI chip select not input; communication is active when this input is logically low. |
| 17 | BC | input | Block commutation sync pin. |
| 18 | DIS | input | Disable input that turns off the gate driver outputs. |
| 19 | NRES | output | NReset output, pulled up to VDD by an internal pull-up resistor after a delay tRP (typ. 2 ms). |
| 20 | AOUT | output | Analog multiplexer output for monitoring external supply voltages and internal junction temperature. |
| 21 | BEMFOUT | output | Back EMF output. |
| 22 | DOUT | output | Digital multiplexer output. |
| 23 | NINT | output | Interrupt output. |
| 24 | SGND3 | power_in | Signal ground 3. |
| 25 | Reserved | unconnected | Pin must be kept not connected. |
| 26 | AGND | power_in | Analog ground. |
| 27 | VDD | power_out | Voltage regulator output providing 5 V and a continuous load current up to 200 mA. |
| 28 | Reserved | unconnected | Pin must be kept not connected. |
| 29 | INH | input | Inhibit input for wake-up. |
| 30 | VSREG | power_in | Voltage regulator power supply input; it has to be protected against negative voltages. |
| 31 | VS | power_in | Charge pump power supply input; it has to be protected against negative voltages. |
| 32 | CP1- | output | Charge pump pin for capacitor 1, negative side. |
| 33 | CP1+ | output | Charge pump pin for capacitor 1, positive side. |
| 34 | CP2- | output | Charge pump pin for capacitor 2, negative side. |
| 35 | CP2+ | output | Charge pump pin for capacitor 2, positive side. |
| 36 | CP | power_out | Charge pump output that supplies the gate drivers for full drive of the external MOSFETs. |
| 37 | VSMS | power_in | Motor supply sense pin, robust against negative voltages, used to monitor the external MOSFET supply and as BEMF detection reference. |
| 38 | GH1 | output | Gate of external high-side MOSFET 1. |
| 39 | SH1 | bidirectional | Source of external high-side MOSFET 1. |
| 40 | GL1 | output | Gate of external low-side MOSFET 1. |
| 41 | SL1 | bidirectional | Source of external low-side MOSFET 1. |
| 42 | GH2 | output | Gate of external high-side MOSFET 2. |
| 43 | SH2 | bidirectional | Source of external high-side MOSFET 2. |
| 44 | GL2 | output | Gate of external low-side MOSFET 2. |
| 45 | SL2 | bidirectional | Source of external low-side MOSFET 2. |
| 46 | GH3 | output | Gate of external high-side MOSFET 3. |
| 47 | SH3 | bidirectional | Source of external high-side MOSFET 3. |
| 48 | GL3 | output | Gate of external low-side MOSFET 3. |
| 49 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TQFP-48-EP(7x7) |
| Category | Power Management ICs |
| Pins | 49 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Voltage regulator power supply voltage | VSREG | -0.3 | 40 | V | 31 | ||
| Charge pump power supply voltage | VS | -0.3 | 40 | V | 31 | ||
| Sensed motor supply voltage | VSMS | -5 | 40 | V | -7 V for < 1.5 µs transients | 31 | |
| Stabilized supply voltage | VDD | -0.3 | 6 | V | 31 | ||
| Source signal voltage range | VSLX, VSHX | -5 | 40 | V | 31 | ||
| High Voltage Logic I/O voltage range | VINH | -0.3 | 40 | V | 31 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 32 | ||
| Dynamic junction temperature | TJ_Peak | 160 | °C | 100hrs over lifetime; according to mission profile | 32 | ||
| Voltage regulator power supply voltage | VSREG | 6 | 28 | V | 31 | ||
| Charge pump power supply voltage | VS | 6 | 28 | V | 31 | ||
| Sensed motor supply voltage | VSMS | 6 | 28 | V | 32 | ||
| Current sense amplifier input voltage range | VCSIP, VCSIN | -1 | 1 | V | 32 | ||
| Operating junction temperature | Tj | -40 | 150 | °C | 32 | ||
| Temp. warning threshold 1 | TW1 | 120 | 135 | 150 | °C | TEMPM = X | 32 |
| Temp. warning threshold 2 | TW2 | 140 | 155 | 170 | °C | TEMPM = 1 | 32 |
| Thermal shutdown threshold 2 | TSD2 | 160 | 175 | 190 | °C | TEMPM = X | 32 |
| Overvoltage warning threshold | VSOVW, VSREGOVW, VSMSOVW | 18 | 20 | 22 | V | 33 | |
| Overvoltage threshold | VSOV, VSREGOV, VSMSOV | 28.1 | 30 | 32 | V | 33 | |
| Under-voltage threshold | VSUV, VSREGUV, VSMSUV | 5.2 | 5.5 | 5.7 | V | VS, VSREG, VSMS decreasing | 33 |
| Current consumption | IS | 5 | 10 | mA | VS =VSREG =VSMS = 12 V; active mode; open outputs | 33 | |
| Quiescent current in VBAT stand-by | ISREGQ + ISMQ +ISQ | 24 | 38.5 | µA | VS = VSREG = VSMS = 12 V; VBAT standby (no wakeup); TTest = -40°C to 25°C; open outputs | 33 | |
| Output voltage | VDD | 4.865 | 5 | 5.1 | V | Iload = 0 mA to 200 mA; 6 V < Vs < 18 V; -40°C < Tj < 150°C | 34 |
| Drop-out Voltage | VDP | 0.2 | 0.4 | V | ILOAD = 50 mA; VSREG = 4.5 V | 34 | |
| Drop-out Voltage | VDP | 0.3 | 0.5 | V | ILOAD = 100 mA; VSREG = 4.5 V | 34 | |
| Output current in active mode | IDD | 200 | mA | Max. continuous load current | 34 | ||
| Short circuit output current | IDDshort | 300 | 600 | 950 | mA | Current limitation | 34 |
| VDD deactivation time after thermal shutdown | tTSD | 0.8 | 1 | 1.5 | s | 34 | |
| VDD fail threshold | VDDFAIL | 1.8 | 2 | 2.2 | V | VDD short to ground during startup | 34 |
| Drain-source voltage threshold 1 | VSCd1 | 0.4 | 0.5 | 0.6 | V | DSMTH = 00 | 40 |
| Drain-source voltage threshold 2 | VSCd2 | 0.9 | 1 | 1.1 | V | DSMTH = 01 | 40 |
| Drain-source voltage threshold 3 | VSCd3 | 1.35 | 1.5 | 1.65 | V | DSMTH = 10 | 40 |
| Drain-source voltage threshold 4 | VSCd4 | 1.85 | 2 | 2.15 | V | DSMTH = 11 | 40 |
| VSxOUT voltage ratio | VSxOUT | 0.106 | 0.125 | 0.144 | AOUT sinking/ sourcing 2 mA | 41 | |
| DC gain | A20 | 18.4 | 19.6 | 20.4 | GCSA = 00 | 41 | |
| DC gain | A30 | 29.4 | 30 | 30.6 | GCSA = 01 | 41 | |
| DC gain | A70 | 67.9 | 70 | 72.1 | GCSA = 10 | 41 | |
| DC gain | A100 | 97.5 | 100 | 102.5 | GCSA = 11 | 41 | |
| Input offset voltage | VIO | -3.5 | 3 | mV | -200 mV < CSI- < 1 V | 41 | |
| Maximum output overcurrent threshold voltage | VoOCMAX | 2.35 | V | OCTH = 11111 | 41 | ||
| Comparator threshold of VSMS / 2 comparator | VBEMFx | -0.13 | 0.13 | V | VSMS = 12 V; BEMFMOD = 1; relative to VSMS/2 | 42 | |
| Comparator threshold of GND comparator | VBEMFx | -0.1 | 0 | 0.1 | V | VSMS = 12 V; BEMFMOD = 0; BEMFSW = 0 | 42 |
| Input high level | Vin H | 1.8 | 5.5 | V | 42 | ||
| Threshold for entering Flash Mode, rising voltage | VBC,rising | 11.4 | 12.4 | 13.5 | V | 42 | |
| Threshold for entering Flash Mode, falling voltage | VBC,falling | 10.9 | 11.9 | 13 | V | 42 | |
| Pull up resistor at input DIS, IHx | RDIS | 50 | 100 | 200 | k | 42 | |
| Output low level | VBEMFL | 0.2 | 0.4 | V | ILOAD = 1 mA | 42 | |
| Current threshold | ITH | 80 | 120 | µA | 43 | ||
| Pull-down current | IPD | 30 | 70 | µA | VIN = 12 V | 43 | |
| Output low level | VSDOL | 0.2 | 0.4 | V | ISDO = 1 mA | 43 | |
| Serial clock frequency | fSCK | 4.5 | MHz | 44 | |||
| CSN falling until SDO valid | tCSNQV | 100 | ns | Cout = 50 pF | 44 | ||
| CSN rising until SDO tristate | tCSNQT | 150 | ns | Cout = 50 pF | 44 | ||
| SCK falling until SDO valid | tSCKQV | 90 | ns | Cout = 50 pF | 44 | ||
| Minimum CSN high time | tHCSN | 4 | µs | 44 | |||
| Thermal resistance to ambient | Rth j-amb | 33 | °C/W | IC soldered on 2s2p PCB thermally enhanced | 32 | ||
| Thermal resistance to case | Rth j-case | 12 | °C/W | 32 |
CAD (KiCad official)
- Symbol:
L99ASC03GTR - Footprint:
Package_QFP:TQFP-48-1EP_7x7mm_P0.5mm_EP5x5mm - 3D model: TQFP-48-EP(7x7) (KiCad packages3D, STEP)
- 3D model files:
l99asc03gtr-etched.step/l99asc03gtr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);l99asc03gtr.step/l99asc03gtr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (70 pp, sha256
f86911f3d6459f33, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# L99ASC03GTR
**STMicroelectronics** · Motor Driver ICs · TQFP-48-EP(7x7)
L99ASC03GTR from STMicroelectronics, in a TQFP-48-EP(7x7). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SL3 | bidirectional | Source of external low-side MOSFET 3. |
| 2 | CSI+ | input | Current-sense amplifier positive input. |
| 3 | CSI- | input | Current-sense amplifier negative input. |
| 4 | SGND2 | power_in | Signal ground 2. |
| 5 | CSO | output | Current-sense amplifier output. |
| 6 | IL3 | input | Input of low-side switch 3, one input per gate driver with cross-current protection. |
| 7 | IH3 | input | Input of high-side switch 3, one input per gate driver with cross-current protection. |
| 8 | IL2 | input | Input of low-side switch 2, one input per gate driver with cross-current protection. |
| 9 | IH2 | input | Input of high-side switch 2, one input per gate driver with cross-current protection. |
| 10 | IL1 | input | Input of low-side switch 1, one input per gate driver with cross-current protection. |
| 11 | IH1 | input | Input of high-side switch 1, one input per gate driver with cross-current protection. |
| 12 | SGND1 | power_in | Signal ground 1. |
| 13 | SDI | input | SPI serial data input, latched on the rising edge of SCK. |
| 14 | SCK | input | SPI clock input. |
| 15 | SDO | output | SPI serial data output, shifted out on the falling edge of SCK and high impedance when CSN is high. |
| 16 | CSN | input | SPI chip select not input; communication is active when this input is logically low. |
| 17 | BC | input | Block commutation sync pin. |
| 18 | DIS | input | Disable input that turns off the gate driver outputs. |
| 19 | NRES | output | NReset output, pulled up to VDD by an internal pull-up resistor after a delay tRP (typ. 2 ms). |
| 20 | AOUT | output | Analog multiplexer output for monitoring external supply voltages and internal junction temperature. |
| 21 | BEMFOUT | output | Back EMF output. |
| 22 | DOUT | output | Digital multiplexer output. |
| 23 | NINT | output | Interrupt output. |
| 24 | SGND3 | power_in | Signal ground 3. |
| 25 | Reserved | unconnected | Pin must be kept not connected. |
| 26 | AGND | power_in | Analog ground. |
| 27 | VDD | power_out | Voltage regulator output providing 5 V and a continuous load current up to 200 mA. |
| 28 | Reserved | unconnected | Pin must be kept not connected. |
| 29 | INH | input | Inhibit input for wake-up. |
| 30 | VSREG | power_in | Voltage regulator power supply input; it has to be protected against negative voltages. |
| 31 | VS | power_in | Charge pump power supply input; it has to be protected against negative voltages. |
| 32 | CP1- | output | Charge pump pin for capacitor 1, negative side. |
| 33 | CP1+ | output | Charge pump pin for capacitor 1, positive side. |
| 34 | CP2- | output | Charge pump pin for capacitor 2, negative side. |
| 35 | CP2+ | output | Charge pump pin for capacitor 2, positive side. |
| 36 | CP | power_out | Charge pump output that supplies the gate drivers for full drive of the external MOSFETs. |
| 37 | VSMS | power_in | Motor supply sense pin, robust against negative voltages, used to monitor the external MOSFET supply and as BEMF detection reference. |
| 38 | GH1 | output | Gate of external high-side MOSFET 1. |
| 39 | SH1 | bidirectional | Source of external high-side MOSFET 1. |
| 40 | GL1 | output | Gate of external low-side MOSFET 1. |
| 41 | SL1 | bidirectional | Source of external low-side MOSFET 1. |
| 42 | GH2 | output | Gate of external high-side MOSFET 2. |
| 43 | SH2 | bidirectional | Source of external high-side MOSFET 2. |
| 44 | GL2 | output | Gate of external low-side MOSFET 2. |
| 45 | SL2 | bidirectional | Source of external low-side MOSFET 2. |
| 46 | GH3 | output | Gate of external high-side MOSFET 3. |
| 47 | SH3 | bidirectional | Source of external high-side MOSFET 3. |
| 48 | GL3 | output | Gate of external low-side MOSFET 3. |
| 49 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TQFP-48-EP(7x7) |
| Category | Power Management ICs |
| Pins | 49 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Voltage regulator power supply voltage | VSREG | -0.3 | | 40 | V | | 31 |
| Charge pump power supply voltage | VS | -0.3 | | 40 | V | | 31 |
| Sensed motor supply voltage | VSMS | -5 | | 40 | V | -7 V for < 1.5 µs transients | 31 |
| Stabilized supply voltage | VDD | -0.3 | | 6 | V | | 31 |
| Source signal voltage range | VSLX, VSHX | -5 | | 40 | V | | 31 |
| High Voltage Logic I/O voltage range | VINH | -0.3 | | 40 | V | | 31 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 32 |
| Dynamic junction temperature | TJ_Peak | | | 160 | °C | 100hrs over lifetime; according to mission profile | 32 |
| Voltage regulator power supply voltage | VSREG | 6 | | 28 | V | | 31 |
| Charge pump power supply voltage | VS | 6 | | 28 | V | | 31 |
| Sensed motor supply voltage | VSMS | 6 | | 28 | V | | 32 |
| Current sense amplifier input voltage range | VCSIP, VCSIN | -1 | | 1 | V | | 32 |
| Operating junction temperature | Tj | -40 | | 150 | °C | | 32 |
| Temp. warning threshold 1 | TW1 | 120 | 135 | 150 | °C | TEMPM = X | 32 |
| Temp. warning threshold 2 | TW2 | 140 | 155 | 170 | °C | TEMPM = 1 | 32 |
| Thermal shutdown threshold 2 | TSD2 | 160 | 175 | 190 | °C | TEMPM = X | 32 |
| Overvoltage warning threshold | VSOVW, VSREGOVW, VSMSOVW | 18 | 20 | 22 | V | | 33 |
| Overvoltage threshold | VSOV, VSREGOV, VSMSOV | 28.1 | 30 | 32 | V | | 33 |
| Under-voltage threshold | VSUV, VSREGUV, VSMSUV | 5.2 | 5.5 | 5.7 | V | VS, VSREG, VSMS decreasing | 33 |
| Current consumption | IS | 5 | | 10 | mA | VS =VSREG =VSMS = 12 V; active mode; open outputs | 33 |
| Quiescent current in VBAT stand-by | ISREGQ + ISMQ +ISQ | 24 | | 38.5 | µA | VS = VSREG = VSMS = 12 V; VBAT standby (no wakeup); TTest = -40°C to 25°C; open outputs | 33 |
| Output voltage | VDD | 4.865 | 5 | 5.1 | V | Iload = 0 mA to 200 mA; 6 V < Vs < 18 V; -40°C < Tj < 150°C | 34 |
| Drop-out Voltage | VDP | 0.2 | | 0.4 | V | ILOAD = 50 mA; VSREG = 4.5 V | 34 |
| Drop-out Voltage | VDP | 0.3 | | 0.5 | V | ILOAD = 100 mA; VSREG = 4.5 V | 34 |
| Output current in active mode | IDD | | | 200 | mA | Max. continuous load current | 34 |
| Short circuit output current | IDDshort | 300 | 600 | 950 | mA | Current limitation | 34 |
| VDD deactivation time after thermal shutdown | tTSD | 0.8 | 1 | 1.5 | s | | 34 |
| VDD fail threshold | VDDFAIL | 1.8 | 2 | 2.2 | V | VDD short to ground during startup | 34 |
| Drain-source voltage threshold 1 | VSCd1 | 0.4 | 0.5 | 0.6 | V | DSMTH = 00 | 40 |
| Drain-source voltage threshold 2 | VSCd2 | 0.9 | 1 | 1.1 | V | DSMTH = 01 | 40 |
| Drain-source voltage threshold 3 | VSCd3 | 1.35 | 1.5 | 1.65 | V | DSMTH = 10 | 40 |
| Drain-source voltage threshold 4 | VSCd4 | 1.85 | 2 | 2.15 | V | DSMTH = 11 | 40 |
| VSxOUT voltage ratio | VSxOUT | 0.106 | 0.125 | 0.144 | | AOUT sinking/ sourcing 2 mA | 41 |
| DC gain | A20 | 18.4 | 19.6 | 20.4 | | GCSA = 00 | 41 |
| DC gain | A30 | 29.4 | 30 | 30.6 | | GCSA = 01 | 41 |
| DC gain | A70 | 67.9 | 70 | 72.1 | | GCSA = 10 | 41 |
| DC gain | A100 | 97.5 | 100 | 102.5 | | GCSA = 11 | 41 |
| Input offset voltage | VIO | -3.5 | | 3 | mV | -200 mV < CSI- < 1 V | 41 |
| Maximum output overcurrent threshold voltage | VoOCMAX | | | 2.35 | V | OCTH = 11111 | 41 |
| Comparator threshold of VSMS / 2 comparator | VBEMFx | -0.13 | | 0.13 | V | VSMS = 12 V; BEMFMOD = 1; relative to VSMS/2 | 42 |
| Comparator threshold of GND comparator | VBEMFx | -0.1 | 0 | 0.1 | V | VSMS = 12 V; BEMFMOD = 0; BEMFSW = 0 | 42 |
| Input high level | Vin H | 1.8 | | 5.5 | V | | 42 |
| Threshold for entering Flash Mode, rising voltage | VBC,rising | 11.4 | 12.4 | 13.5 | V | | 42 |
| Threshold for entering Flash Mode, falling voltage | VBC,falling | 10.9 | 11.9 | 13 | V | | 42 |
| Pull up resistor at input DIS, IHx | RDIS | 50 | 100 | 200 | k | | 42 |
| Output low level | VBEMFL | | 0.2 | 0.4 | V | ILOAD = 1 mA | 42 |
| Current threshold | ITH | 80 | | 120 | µA | | 43 |
| Pull-down current | IPD | 30 | | 70 | µA | VIN = 12 V | 43 |
| Output low level | VSDOL | 0.2 | | 0.4 | V | ISDO = 1 mA | 43 |
| Serial clock frequency | fSCK | | | 4.5 | MHz | | 44 |
| CSN falling until SDO valid | tCSNQV | | | 100 | ns | Cout = 50 pF | 44 |
| CSN rising until SDO tristate | tCSNQT | | | 150 | ns | Cout = 50 pF | 44 |
| SCK falling until SDO valid | tSCKQV | | | 90 | ns | Cout = 50 pF | 44 |
| Minimum CSN high time | tHCSN | 4 | | | µs | | 44 |
| Thermal resistance to ambient | Rth j-amb | | 33 | | °C/W | IC soldered on 2s2p PCB thermally enhanced | 32 |
| Thermal resistance to case | Rth j-case | | 12 | | °C/W | | 32 |
## CAD (KiCad official)
- Symbol: `L99ASC03GTR`
- Footprint: `Package_QFP:TQFP-48-1EP_7x7mm_P0.5mm_EP5x5mm`
- 3D model: TQFP-48-EP(7x7) (KiCad packages3D, STEP)
- 3D model files: `l99asc03gtr-etched.step` / `l99asc03gtr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `l99asc03gtr.step` / `l99asc03gtr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/l99asc03gtr.pdf) (70 pp, sha256 `f86911f3d6459f33`, retrieved 2026-10-30, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/l99asc03gtr-datasheet.pdf)