component
L9945TR
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STMicroelectronics Power Management - Specialized, TQFP-64(10x10). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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README
markdownL9945TR
STMicroelectronics · Power Management - Specialized · TQFP-64(10x10)
L9945TR from STMicroelectronics, in a TQFP-64(10x10). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | NON1 | input | Output 1 ON-OFF signal (NPWM signal for H-Bridge 1); digital input with pull-up, active low, 2 kV HBM ESD. |
| 2 | NON2 | input | Output 2 ON-OFF signal (DIR signal for H-Bridge 1); digital input with pull-up, active low, 2 kV HBM ESD. |
| 3 | NON3 | input | Output 3 ON-OFF signal (HIZ signal for H-Bridge 1); digital input with pull-up, active low, 2 kV HBM ESD. |
| 4 | NON4 | input | Output 4 ON-OFF signal; digital input with pull-up, active low, 2 kV HBM ESD. |
| 5 | NON5 | input | Output 5 ON-OFF signal (NPWM signal for H-Bridge 2); digital input with pull-up, active low, 2 kV HBM ESD. |
| 6 | NON6 | input | Output 6 ON-OFF signal (DIR signal for H-Bridge 2); digital input with pull-up, active low, 2 kV HBM ESD. |
| 7 | NON7 | input | Output 7 ON-OFF signal (HIZ signal for H-Bridge 2); digital input with pull-up, active low, 2 kV HBM ESD. |
| 8 | NON8 | input | Output 8 ON-OFF signal; digital input with pull-up, active low, 2 kV HBM ESD. |
| 9 | VIO | power_in | Supply voltage for SDO, must be connected to the same supply as the master SPI device; VIO range -0.3 to 40 V per Table 2. |
| 10 | SDO | output | SPI data out; requires an external pull-down resistor in the 10k to 47k range vs GNDIO. |
| 11 | GNDIO | power_in | Ground for SPI, must be shorted to GNDCP. |
| 12 | NRES | input | Reset input, must be connected to ECU reset; active low with pull-up and 2 kV HBM ESD. |
| 13 | NCS | input | SPI chip select, pull-up, active low. |
| 14 | SDI | input | SPI data in with pull-up. |
| 15 | SCK | input | SPI clock with pull-up. |
| 16 | DIS | input | Disable input, must be connected to the external microcontroller to allow disabling of outputs 1-6; pull-up, active high. |
| 17 | DRN8 | input | FET drain on channel 8; ESD ±4 kV HBM. |
| 18 | GNSP8 | output | NFET gate / PFET source on channel 8; ESD ±4 kV HBM. |
| 19 | SNGP8 | output | NFET source / PFET gate on channel 8; ESD ±4 kV HBM. |
| 20 | BATT78 | power_in | Battery supply for channels 7 and 8; BATTxx range -1 to 60 V per Table 2. |
| 21 | SNGP7 | output | NFET source / PFET gate on channel 7; ESD ±4 kV HBM. |
| 22 | GNSP7 | output | NFET gate / PFET source on channel 7; ESD ±4 kV HBM. |
| 23 | DRN7 | input | FET drain on channel 7; ESD ±4 kV HBM. |
| 24 | PGND78 | power_in | Power ground for channels 7 and 8; ground voltage range -0.3 to 0.3 V per Table 2. |
| 25 | PGND56 | power_in | Power ground for channels 5 and 6; ground voltage range -0.3 to 0.3 V per Table 2. |
| 26 | DRN6 | input | FET drain on channel 6; ESD ±4 kV HBM. |
| 27 | GNSP6 | output | NFET gate / PFET source on channel 6; ESD ±4 kV HBM. |
| 28 | SNGP6 | output | NFET source / PFET gate on channel 6; ESD ±4 kV HBM. |
| 29 | BATT56 | power_in | Battery supply for channels 5 and 6; BATTxx range -1 to 60 V per Table 2. |
| 30 | SNGP5 | output | NFET source / PFET gate on channel 5; ESD ±4 kV HBM. |
| 31 | GNSP5 | output | NFET gate / PFET source on channel 5; ESD ±4 kV HBM. |
| 32 | DRN5 | input | FET drain on channel 5; ESD ±4 kV HBM. |
| 33 | RESERVED | unconnected | Reserved pin; leave floating. |
| 34 | RESERVED | unconnected | Reserved pin; leave floating. |
| 35 | VDD5 | power_in | 5 V input (usually output of external regulator); operating range 4.5 V to 5.5 V. |
| 36 | GND | power_in | Ground; ground voltage range -0.3 to 0.3 V per Table 2. |
| 37 | GNDCP | power_in | Ground for charge pump, must be shorted to GNDIO. |
| 38 | VGBHI | power_out | Charge pump output (battery + 12 V), connected to VPS through a tank capacitor; VGBHI-VPS max 20 V. |
| 39 | CH4 | bidirectional | 2nd node for flying capacitor 2 of the charge pump. |
| 40 | CH2 | bidirectional | 2nd node for flying capacitor 1 of the charge pump. |
| 41 | CH3 | bidirectional | 1st node for flying capacitor 2 of the charge pump. |
| 42 | VPS | power_in | Battery input used to supply the charge pump; static VPS range -1 to 60 V per Table 2. |
| 43 | CH1 | bidirectional | 1st node for flying capacitor 1 of the charge pump. |
| 44 | RESERVED | input | Reserved pin; tie low. |
| 45 | NDIS | bidirectional | Negated disable input/output; can act as a negated disable input or as an interrupt output to the microcontroller when pulled down; pull-down, active low. |
| 46 | RESERVED | unconnected | Reserved pin; leave floating. |
| 47 | EN6 | input | Output 6 enable, used to enable the output driver for safety relevant load control; pull-down, active high. |
| 48 | RESERVED | unconnected | Reserved pin; leave floating. |
| 49 | DRN4 | input | FET drain on channel 4; ESD ±4 kV HBM. |
| 50 | GNSP4 | output | NFET gate / PFET source on channel 4; ESD ±4 kV HBM. |
| 51 | SNGP4 | output | NFET source / PFET gate on channel 4; ESD ±4 kV HBM. |
| 52 | BATT34 | power_in | Battery supply for channels 3 and 4; BATTxx range -1 to 60 V per Table 2. |
| 53 | SNGP3 | output | NFET source / PFET gate on channel 3; ESD ±4 kV HBM. |
| 54 | GNSP3 | output | NFET gate / PFET source on channel 3; ESD ±4 kV HBM. |
| 55 | DRN3 | input | FET drain on channel 3; ESD ±4 kV HBM. |
| 56 | PGND34 | power_in | Power ground for channels 3 and 4; ground voltage range -0.3 to 0.3 V per Table 2. |
| 57 | PGND12 | power_in | Power ground for channels 1 and 2; ground voltage range -0.3 to 0.3 V per Table 2. |
| 58 | DRN2 | input | FET drain on channel 2; ESD ±4 kV HBM. |
| 59 | GNSP2 | output | NFET gate / PFET source on channel 2; ESD ±4 kV HBM. |
| 60 | SNGP2 | output | NFET source / PFET gate on channel 2; ESD ±4 kV HBM. |
| 61 | BATT12 | power_in | Battery supply for channels 1 and 2; BATTxx range -1 to 60 V per Table 2. |
| 62 | SNGP1 | output | NFET source / PFET gate on channel 1; ESD ±4 kV HBM. |
| 63 | GNSP1 | output | NFET gate / PFET source on channel 1; ESD ±4 kV HBM. |
| 64 | DRN1 | input | FET drain on channel 1; ESD ±4 kV HBM. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TQFP-64(10x10) |
| Category | Power Management (PMIC) |
| Pins | 64 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VDD5 voltage range | VDD5 | -0.3 | 40 | V | 13 | ||
| Static VPS voltage range | VVPS_sta | -1 | 60 | V | Ext. HS, Static; Max voltage: VGBHI, VPS = 20 V | 13 | |
| Dynamic VPS voltage range | VVPS_dyn | -2 | 60 | V | Dynamic; 2 ms test pulse | 13 | |
| Leakage on pin VPS | IPS_leak | 0 | 20 | µA | POR or NRES active; VPS = [0, 36] V | 13 | |
| VGBHI voltage range (Ch. Pump) | VGBHI | -0.3 | 80 | V | Max voltage: VGBHI, VPS = 20 V | 13 | |
| VIO voltage range | VVIO | -0.3 | 40 | V | Supply for SDO | 13 | |
| SNGPx voltage range | VSNGPx | -14 | 60 | V | Max voltage: GNSPx - SNGPx = 20 V (in all conditions); BATTxx, SNGPx ≥ 0 V (When DSM is used for OC detection) | 13 | |
| GNSPx voltage range | VGNSPx | -14 | 80 | V | Max voltage: GNSPx - SNGPx = 20 V | 13 | |
| DRNx voltage range | VDRNx | -20 | 60 | V | 13 | ||
| BATTxx voltage range | VBATTxx | -1 | 60 | V | Max voltage: BATTxx, SNGPx ≥ 0 V; When DSM is used for OC detection | 13 | |
| Ground voltage range | VGND_PINS | -0.3 | 0.3 | V | 13 | ||
| CH1 & CH3 | VCH1&3 | -0.3 | 60 | V | 13 | ||
| CH2 & CH4 | VCH2&4 | -0.3 | 80 | V | CH2 - VPS = 20 V; CH4 - CH2 = 20 V; VGBHI - CH4 = 20 V | 14 | |
| Digital HV input voltage range | VDIG_IO | -0.3 | 40 | V | SDO and NDIS have to withstand this voltage also in ON-condition | 14 | |
| Operating / Lifetime junction temperature | Tj_op | -40 | 150 | °C | Lifetime guaranteed | 16 | |
| Storage temperature | Tstg | -40 | 150 | °C | -55 °C is allowed for a maximum of 15h | 16 | |
| Over temperature comparator threshold | TOT_OFF | 165 | 190 | °C | 16 | ||
| Thermal resistance junction to case | Rth_j_c | 2.4 | °C/W | Values are according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board | 16 | ||
| Thermal resistance junction to ambient | Rth_j_a | 30 | °C/W | 16 | |||
| VPS operational supply range | VVPS | 3.8 | 36 | V | Operational | 18 | |
| VPS load dump | VVPS | 60 | V | Load dump (< 500 ms) | 18 | ||
| VPS supply for 15 min | VVPS | 48 | V | For 15 min at 45 °C | 18 | ||
| VDD5 supply range | VVDD5 | 4.5 | 5.5 | V | Supply for internal digital, analog and SPI (except SDO) Tj = Tj_op | 18 | |
| VIO supply range | VVIO | 3 | 5.5 | V | Supply for SPI pin SDO Tj = Tj_op | 18 | |
| VDD5 operating mode current | IVDD5_opm | 7 | 35 | mA | All outputs controlled ON | 20 | |
| VDD5 current in case of overvoltage | IVDD5OV | 8 | 40 | mA | 5.5 V < VDD5 ≤ 36 V | 20 | |
| VDD5 UV threshold | VVDD5_UV | 4.5 | 4.7 | V | Undervoltage | 20 | |
| VDD5 UV hysteresis | VVDD5_UV_HYS | 10 | 50 | mV | VVDD5_UV | 20 | |
| VDD5 overvoltage disable threshold | VVDD5_OV | 5.3 | 5.5 | V | Self-checked by HWSC | 20 | |
| POR release threshold | VPOR | 4.15 | 4.45 | V | Related to VDD5 | 20 | |
| POR hysteresis | VPOR_HYS | 0.15 | 0.25 | V | 20 | ||
| VDD5 undervoltage filter time | tVDD5_UV1 | 2 | 2.6 | 3.25 | ms | 20 | |
| VDD5 overvoltage filter time | tVDD5_OV | 2 | 2.6 | 3.25 | ms | 20 | |
| VDD5 under voltage filter time for NDIS activation | tVDD5_UV2 | 415 | 500 | 625 | ms | 20 | |
| POR RESET delay time | tPOR_D | 10 | 50 | µs | POR delay at startup of VDD5 | 20 | |
| VPS operating mode current | IVPS_OPM | 3 | 50 | mA | 21 | ||
| VPS low battery detection threshold | VVPS_UV | 3.5 | 3.8 | V | 21 | ||
| Filter time for VPS low battery detection | tLBD_FIL | 0.5 | 5 | µs | 21 | ||
| VVPS accuracy | VPS_ACC | -400 | 400 | mV | 3.5 V < VVPS < 12 V | 21 | |
| VVPS accuracy | VPS_ACC | -3.3 | 3.3 | % | 12 V < VVPS < 48 V | 21 | |
| VPS ADC input range | VPS_ADC_in | 0 | 48 | V | VVPS | 21 | |
| Charge pump frequency | fCP | 184 | 200 | 216 | kHz | Dependent on tSYS | 22 |
| Charge pump tank capacitor | CTANK | 420 | 470 | 520 | nF | Connected to VPS IVGBHI = 15 mA | 22 |
| Charge pump flying capacitors | CFLY | 198 | 220 | 242 | nF | Connected between CH1-CH2, CH3-CH4; IVGBHI = 15 mA | 22 |
| Under voltage hysteresis | VhCP_UV | 250 | mV | Referenced to VVPS | 22 | ||
| Under voltage filter time | tCP_UV | 10 | 30 | µs | 22 | ||
| Charge pump max voltage | VVGBHI_MAX | 80 | V | Referenced to GND | 22 | ||
| Startup time | tCPstartup | 2 | ms | 22 | |||
| Internal absorption when VGNSPx = ON | IBIAS_ON | 530 | µA | Internal absorption in when VGNSPx = ON Design info. Not tested in ATE | 22 | ||
| SDO rise and fall time | tsdo_trans | 5 | 35 | ns | CLOAD = 20 to 150 pF | 23 | |
| Propagation delay SCLK to data at SDO active | tpcld | 50 | ns | CLOAD = 150 pF | 23 | ||
| NCS LOW to output SDO active | tcsdv | 90 | ns | CLOAD = 150 pF | 23 | ||
| Input capacitance at SDI; SDO; SCLK; NCS | CIN_SPI | 10 | pF | 23 | |||
| Low output level | VSDOL | 0.4 | V | ISDO = 3.2 mA | 23 | ||
| Tri state leakage current | ISDO_Leak | -5 | 5 | µA | NCS = HIGH; 0 < VSDO < VIO, 0.3 V | 23 | |
| Maximum possible peak reverse current at SDO HS before protection Turn Off | IOVpeak_SDO_HS | 90 | 250 | mA | VSDO = 36 V; VIO = 3 V; limited by RDSON only; HS channel On | 23 | |
| Overvoltage detection analog filter time | tOV_SDO_fil | 100 | 700 | ns | 23 | ||
| Overvoltage detection HS turn OFF/ON time at SDO | tOFF_PROT_OV | 0.5 | 5 | µs | Includes analog filter time and comparator reaction time until 50% IOVpeak_SDO_HS | 23 | |
| Gate charge current NMOS | ICh0Gx | -100 | -40 | mA | GCC[1:0] = [0, 0] | 27 | |
| Gate charge current NMOS and PMOS | ICh1Gx | -32.4 | -19.6 | mA | GCC[1:0] = [0, 1] | 27 | |
| Gate charge current NMOS and PMOS | ICh2Gx | -8.6 | -4 | mA | GCC[1:0] = [1, 0] | 27 |
CAD (KiCad official)
- Symbol:
L9945TR - Footprint:
Package_QFP:TQFP-64_10x10mm_P0.5mm - 3D model: TQFP-64(10x10) (KiCad packages3D, STEP)
- 3D model files:
l9945tr-etched.step/l9945tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);l9945tr.step/l9945tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (151 pp, sha256
9d46fef15bb11d30, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).