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L9014QLT1G
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LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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L9014QLT1G
LRC · Bipolar (BJT) · SOT-23
L9014QLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN general-purpose transistor; the datasheet gives no pin-specific limit for this pin, only device maximum ratings such as Emitter-Base Voltage VEBO 5 V and Collector current IC 100 mA. |
| 2 | EMITTER | passive | Emitter terminal of the NPN general-purpose transistor; the datasheet gives no pin-specific limit for this pin, only device maximum ratings such as Emitter-Base Voltage VEBO 5 V and Collector current IC 100 mA. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN general-purpose transistor; the datasheet gives no pin-specific limit for this pin, only device maximum ratings such as Collector-Emitter Voltage VCEO 45 V and Collector-Base Voltage VCBO 50 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 45 | V | IC=1.0mA | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=100µA | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | V | IC=100µA | 2 | ||
| Collector Cutoff Current | ICBO | 100 | nA | VCB=40V | 2 | ||
| Emitter Cutoff Current | IEBO | 100 | nA | VEB=3V | 2 | ||
| DC Current Gain (grade Q) | HFE | 150 | 300 | IC=1mA, VCE=5V; grade Q per NOTE table (HFE 150~300) | 2 | ||
| Collector-Emitter Saturation Voltage | VCE | 0.3 | V | IC=100mA, IB=5mA | 2 | ||
| Collector-Emitter Voltage | VCEO | 45 | V | 1 | |||
| Collector-Base Voltage | VCBO | 50 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector current-continuous | IC | 100 | mA | 1 | |||
| Junction and Storage Temperature | TJ ,Tstg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation, FR-5 Board | PD | 225 | mW | FR-5 board (1.0 x 0.75 x 0.062 in.), TA=25°C | 1 | ||
| Thermal Resistance, Junction to Ambient, FR-5 Board | RθJA | 556 | °C/W | FR-5 board | 1 | ||
| Total Device Dissipation, Alumina Substrate | PD | 300 | mW | Alumina substrate (0.4 x 0.3 x 0.024 in. 99.5% alumina), TA=25°C | 1 | ||
| Thermal Resistance, Junction to Ambient, Alumina Substrate | RθJA | 417 | °C/W | Alumina substrate | 1 |
CAD (KiCad official)
- Symbol:
L9014QLT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
l9014qlt1g-etched.step/l9014qlt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);l9014qlt1g.step/l9014qlt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (4 pp, sha256
8f446da35ccb1609, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# L9014QLT1G
**LRC** · Bipolar (BJT) · SOT-23
L9014QLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN general-purpose transistor; the datasheet gives no pin-specific limit for this pin, only device maximum ratings such as Emitter-Base Voltage VEBO 5 V and Collector current IC 100 mA. |
| 2 | EMITTER | passive | Emitter terminal of the NPN general-purpose transistor; the datasheet gives no pin-specific limit for this pin, only device maximum ratings such as Emitter-Base Voltage VEBO 5 V and Collector current IC 100 mA. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN general-purpose transistor; the datasheet gives no pin-specific limit for this pin, only device maximum ratings such as Collector-Emitter Voltage VCEO 45 V and Collector-Base Voltage VCBO 50 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 45 | | | V | IC=1.0mA | 2 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | | | V | IE=100µA | 2 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | | | V | IC=100µA | 2 |
| Collector Cutoff Current | ICBO | | | 100 | nA | VCB=40V | 2 |
| Emitter Cutoff Current | IEBO | | | 100 | nA | VEB=3V | 2 |
| DC Current Gain (grade Q) | HFE | 150 | | 300 | | IC=1mA, VCE=5V; grade Q per NOTE table (HFE 150~300) | 2 |
| Collector-Emitter Saturation Voltage | VCE | | | 0.3 | V | IC=100mA, IB=5mA | 2 |
| Collector-Emitter Voltage | VCEO | | | 45 | V | | 1 |
| Collector-Base Voltage | VCBO | | | 50 | V | | 1 |
| Emitter-Base Voltage | VEBO | | | 5 | V | | 1 |
| Collector current-continuous | IC | | | 100 | mA | | 1 |
| Junction and Storage Temperature | TJ ,Tstg | -55 | | 150 | °C | | 1 |
| Total Device Dissipation, FR-5 Board | PD | | | 225 | mW | FR-5 board (1.0 x 0.75 x 0.062 in.), TA=25°C | 1 |
| Thermal Resistance, Junction to Ambient, FR-5 Board | RθJA | | | 556 | °C/W | FR-5 board | 1 |
| Total Device Dissipation, Alumina Substrate | PD | | | 300 | mW | Alumina substrate (0.4 x 0.3 x 0.024 in. 99.5% alumina), TA=25°C | 1 |
| Thermal Resistance, Junction to Ambient, Alumina Substrate | RθJA | | | 417 | °C/W | Alumina substrate | 1 |
## CAD (KiCad official)
- Symbol: `L9014QLT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `l9014qlt1g-etched.step` / `l9014qlt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `l9014qlt1g.step` / `l9014qlt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586176011889487872) (4 pp, sha256 `8f446da35ccb1609`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/l9014qlt1g-datasheet.pdf)