component
L9013QLT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| l9013qlt1g-etched.glb | 8d ago |
| l9013qlt1g-etched.step | 8d ago |
| l9013qlt1g-hero.glb | 8d ago |
| l9013qlt1g-hero.overlay.json | 8d ago |
| l9013qlt1g.glb | 8d ago |
| l9013qlt1g.kicad_mod | 8d ago |
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| l9013qlt1g.lbr | 8d ago |
| l9013qlt1g.step | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
L9013QLT1G
LRC · Bipolar (BJT) · SOT-23
L9013QLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the NPN transistor; Emitter-Base voltage VEBO is limited to 5 V and emitter-base breakdown V(BR)EBO is 5 V min at IE = 100 µA. |
| 2 | EMITTER | passive | Emitter of the NPN transistor, the common terminal; the continuous collector current IC is limited to 500 mA. |
| 3 | COLLECTOR | passive | Collector of the NPN transistor; VCEO is 20 V, VCBO is 40 V, and continuous collector current IC is 500 mA max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 20 | Vdc | IC = 1.0mA | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | Vdc | IE = 100µA | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 40 | Vdc | IC = 100µA | 2 | ||
| Collector Cutoff Current | ICBO | 150 | nA | VCB = 35 V | 2 | ||
| Emitter Cutoff Current | IEBO | 150 | nA | VEB = 4V | 2 | ||
| DC Current Gain | HFE | 150 | 300 | IC = 50mA, VCE = 1V | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(S) | 0.6 | Vdc | IC = 500mA, IB = 50mA | 2 | ||
| Collector-Emitter Voltage | VCEO | 20 | V | 1 | |||
| Collector-Base Voltage | VCBO | 40 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current - Continuous | IC | 500 | mA | 1 | |||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Total Device Dissipation, FR-5 Board | PD | 225 | mW | FR-5 Board (Note 1), TA = 25ºC | 1 | ||
| Derate above 25ºC, FR-5 Board | 1.8 | mW/℃ | Derate above 25ºC | 1 | |||
| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RΘJA | 556 | ℃/W | FR-5 Board (Note 1) | 1 | ||
| Total Device Dissipation, Alumina Substrate | PD | 300 | mW | Alumina Substrate (Note 2), TA = 25ºC | 1 | ||
| Derate above 25ºC, Alumina Substrate | 2.4 | mW/℃ | Derate above 25ºC | 1 | |||
| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RΘJA | 417 | ℃/W | Alumina Substrate (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
L9013QLT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
l9013qlt1g-etched.step/l9013qlt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);l9013qlt1g.step/l9013qlt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (5 pp, sha256
e306d3f738c814ea, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).