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Ray Publish 0.1.0 05a33aa 13d ago

L9012QLT1G

LRC · Bipolar Transistors - BJT · SOT-23

L9012QLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor, which controls collector current; for the Q suffix the DC current gain is hFE 150 to 300 at IC=-50 mA and VCE=-1 V.
2 EMITTER passive Emitter terminal of the PNP transistor; the datasheet lists the emitter cutoff current IEBO as -150 nA maximum at VBE=-4 V.
3 COLLECTOR passive Collector terminal of the PNP transistor, rated for VCEO -20 V, VCBO -40 V and continuous collector current IC -500 mA.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -20 V 1
Collector-Base Voltage VCBO -40 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -500 mAdc 1
Total Device Dissipation (FR-5 Board) PD 225 mW FR-5 Board, TA=25°C 1
Derate above 25°C (FR-5 Board) 1.8 mW/°C FR-5 Board, derate above TA=25°C 1
Total Device Dissipation (Alumina Substrate) PD 300 mW Alumina Substrate, TA=25°C 1
Derate above 25°C (Alumina Substrate) 2.4 mW/°C Alumina Substrate, derate above TA=25°C 1
Thermal Resistance, Junction to Ambient (FR-5 Board) RθJA 556 °C/W FR-5 Board 1
Thermal Resistance, Junction to Ambient (Alumina Substrate) RθJA 417 °C/W Alumina Substrate 1
Junction and Storage Temperature Tj, Tstg -55 150 °C 1
Collector-Emitter Breakdown Voltage V(BR)CEO -20 V IC=-1.0mA 1
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA 1
Collector-Base Breakdown Voltage V(BR)CBO -40 V IC=-100µA 1
Collector Cutoff Current ICBO -150 nA VCB=-35V 1
Emitter Cutoff Current IEBO -150 nA VBE=-4V 1
DC Current Gain (Grade Q) hFE 150 300 IC=-50mA, VCE=-1V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.6 V IC=-500mA, IB=-50mA 2

CAD (KiCad official)

  • Symbol: L9012QLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: l9012qlt1g-etched.step / l9012qlt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); l9012qlt1g.step / l9012qlt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (2 pp, sha256 c963d04ab5fcda21, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF