component
L8550PLT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownL8550PLT1G
LRC · Bipolar (BJT) · SOT-23
L8550PLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP silicon general-purpose transistor, with emitter-base breakdown voltage of -5 V minimum at IE = -100 µA and emitter cutoff current of -150 nA maximum at VEB = -4 V. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, rated with a maximum emitter cutoff current of -150 nA at VEB = -4 V and emitter-base breakdown of -5 V minimum. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, rated for VCEO of -25 V, VCBO of -40 V, and continuous collector current of -800 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (P grade) | HFE | 100 | 200 | IC=-100mA, VCE=-1V | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(S) | -0.5 | V | IC=-800mA, IB=-80mA | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -25 | V | IC=-1.0mA | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE=-100µA | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | V | IC=-100µA | 2 | ||
| Collector Cutoff Current | ICBO | -150 | nA | VCB=-35V | 2 | ||
| Emitter Cutoff Current | IEBO | -150 | nA | VEB=-4V | 2 | ||
| Collector-Emitter Voltage | VCEO | -25 | V | 1 | |||
| Collector-Base Voltage | VCBO | -40 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current, Continuous | IC | -800 | mAdc | 1 | |||
| Total Device Dissipation, FR-5 Board | PD | 225 | mW | TA = 25 °C | 1 | ||
| Derate above 25 °C, FR-5 Board | 1.8 | mW/°C | 1 | ||||
| Thermal Resistance, Junction to Ambient, FR-5 Board | RθJA | 556 | °C/W | 1 | |||
| Total Device Dissipation, Alumina Substrate | PD | 300 | mW | TA = 25 °C | 1 | ||
| Derate above 25 °C, Alumina Substrate | 2.4 | mW/°C | 1 | ||||
| Thermal Resistance, Junction to Ambient, Alumina Substrate | RθJA | 417 | °C/W | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
L8550PLT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
l8550plt1g-etched.step/l8550plt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);l8550plt1g.step/l8550plt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (4 pp, sha256
4204f6222aafe4de, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).