component
L8550HQ
Public Made by Adomby adom
YONGYUTAI Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownL8550HQ
YONGYUTAI · Bipolar Transistors - BJT · SOT-23
L8550HQ from YONGYUTAI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the PNP transistor; emitter-base voltage limit is -5 V (V(BR)EBO min -5 V at IE=-100µA). |
| 2 | EMITTER | passive | Emitter of the PNP transistor; the datasheet gives the emitter cutoff current as max -150 nA at VEB=-4 V. |
| 3 | COLLECTOR | passive | Collector of the PNP transistor; VCEO is -25 V, VCBO is -40 V and the collector current is -1500 mAdc max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YONGYUTAI |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -25 | V | 1 | |||
| Collector-Base Voltage | VCBO | -40 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current | IC | -1500 | mAdc | 1 | |||
| Total Device Dissipation FR-5 Board | PD | 225 | mW | FR-5 Board, TA=25°C | 1 | ||
| Total Device Dissipation Alumina Substrate | PD | 300 | mW | Alumina Substrate, TA=25°C | 1 | ||
| Thermal Resistance, Junction to Ambient (FR-5) | RθJA | 556 | °C/W | FR-5 Board | 1 | ||
| Thermal Resistance, Junction to Ambient (Alumina) | RθJA | 417 | °C/W | Alumina Substrate | 1 | ||
| Junction and Storage Temperature | Tj,Tstg | -55 | 150 | °C | 1 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -25 | V | IC=-1.0mA | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE=-100µA | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | V | IC=-100µA | 2 | ||
| Collector Cutoff Current | ICBO | -150 | nA | VCB=-35V | 2 | ||
| Emitter Cutoff Current | IEBO | -150 | nA | VEB=-4V | 2 | ||
| DC Current Gain | HFE | 150 | 300 | IC=-100mA,VCE=-1V | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(S) | -0.5 | V | IC=-800mA,IB=-80mA | 2 |
CAD (KiCad official)
- Symbol:
L8550HQ - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
l8550hq-etched.step/l8550hq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);l8550hq.step/l8550hq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YONGYUTAI datasheet (3 pp, sha256
922f9786c0042b2b, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).