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L6563A

STMicroelectronics · AC-DC Controllers And Regulators · SOIC-14

L6563A from STMicroelectronics, in a SOIC-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 INV input Inverting input of the error amplifier, fed from the PFC output divider, and it sinks a TBO-programmed current only when tracking boost is used.
2 COMP output Output of the error amplifier, compensated to INV (pin 1) to achieve loop stability and low THD.
3 MULT input Main multiplier input connected to the rectified mains through a resistor divider, providing the sinusoidal current reference and RMS mains information.
4 CS input Input to the PWM comparator that senses MOSFET current through a resistor to determine turn-off; the 1.7V abnormal-current comparison is not present in the L6563A.
5 VFF input Second multiplier input for the 1/V2 function, requiring a capacitor and parallel resistor to GND, and it must never be connected directly to GND.
6 TBO passive Tracking boost pin providing a buffered VFF voltage; a resistor to GND sets the current sunk from INV, and the pin is left open if the function is unused.
7 PFC_OK input PFC output voltage monitor: above 2.5V the IC latches off, and below 0.2V it shuts down until the voltage exceeds 0.26V; tie to 0.26 to 2.5V if unused.
8 PWM_LATCH output Fault output asserted high when PFC_OK exceeds 2.5V, used to latch-disable the DC-DC converter PWM controller; high impedance in normal operation.
9 PWM_STOP output Fault output pulled to ground when RUN is below 0.5V, used to temporarily disable the DC-DC converter PWM controller; high impedance in normal operation.
10 RUN input Remote ON/OFF control: below 0.52V shuts the IC down without latching and it restarts above 0.6V, and it can be tied to VFF for brownout protection.
11 ZCD input Boost inductor demagnetization sensing input for transition-mode operation, where a negative-going edge triggers MOSFET turn-on.
12 GND power_in Ground return for both the signal part of the IC and the gate driver.
13 GD output Totem-pole gate driver output rated 600 mA source and 800 mA sink, with the high-level voltage clamped at about 12V.
14 VCC power_in Supply voltage of both the signal part of the IC and the gate driver.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package SOIC-14
Category Power Management (PMIC)
Pins 14

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating range (Vcc) Vcc 10.3 22 V After turn-on 7
Analog inputs & outputs voltage -0.3 8 V 6
Max. sink current IPWM_STOP 3 mA 6
Zero current detector max. current IZCD -10 10 mA -10 (source), 10 (sink) 6
Power dissipation PTOT 0.75 W TA = 50°C 6
Junction temperature operating range TJ -25 150 °C 6
Storage temperature TSTG -55 150 °C 6
Maximum thermal resistance junction-ambient RthJA 120 °C/W 6
Turn-on threshold VccOn 11 12 13 V 7
Turn-off threshold VccOff 8.7 9.5 10.3 V 7
Hysteresis Hys 2.3 2.7 V 7
Zener voltage VZ 22 25 28 V Icc = 20 mA 7
Start-up current Istart-up 50 90 µA Before turn-on, Vcc = 10V 7
Quiescent current Iq 3 5 mA After turn-on 7
Operating supply current ICC 3.8 5.5 mA @ 70kHz 7
Idle state quiescent current (latched) Iqdis 180 250 µA Latched by PFC_OK > Vthl or Vcs > VCSdis 7
Idle state quiescent current (disabled) Iqdis 1.5 2.2 mA Disabled by PFC_OK < Vth or RUN < VDIS 7
Multiplier input bias current IMULT -0.2 -1 µA VMULT = 0 to 3 V 7
Multiplier linear operation range VMULT 0 3 V 7
Multiplier internal clamp level VCLAMP 9 9.5 V IMULT = 1 mA 7
Output max. slope 2.2 2.34 V/V VMULT=0 to 0.5V, VFF=0.8V, VCOMP = Upper clamp 7
Multiplier gain KM 0.375 0.45 0.525 V VMULT = 1 V, VCOMP= 4 V, VVFF = VMULT 7
Voltage feedback input threshold (TJ = 25 °C) VINV 2.465 2.5 2.535 V TJ = 25 °C 7
Voltage feedback input threshold (over Vcc) VINV 2.44 2.56 V 10.3 V < Vcc < 22 V 7
Line regulation 2 5 mV Vcc = 10.3 V to 22V 7
Error amplifier input bias current IINV -0.2 -1 µA TBO open, VINV = 0 to 4 V 7
Voltage gain Gv 60 80 dB Open loop 8
Gain-bandwidth product GB 1 MHz 8
Error amplifier source current ICOMP -2 -3.5 -5 mA VCOMP = 4V, VINV = 2.4 V 8
Error amplifier sink current ICOMP 2.5 4.5 mA VCOMP = 4V, VINV = 2.6 V 8
Upper clamp voltage VCOMP 5.7 6.2 6.7 V ISOURCE = 0.5 mA 8
Lower clamp voltage VCOMP 2.1 2.25 2.4 V ISINK = 0.5 mA 8
Current sense input bias current ICS -1 µA VCS = 0 8
Leading edge blanking tLEB 100 200 300 ns 8
Delay to output td(H-L) 120 ns 8
Current sense reference clamp VCSclamp 1 1.08 1.16 V VCOMP = Upper clamp, VVFF = VMULT = 0.5V 8
Current sense offset Vcsoffset 25 mV VMULT = 0, VVFF = 3V 8
Dynamic OVP triggering current IOVP 17 20 23 µA 8
Static OVP threshold 2 2.15 2.3 V 8
Voltage feedforward linear operation range VVFF 0.5 3 V RFF = 47 kΩ to GND 8
Voltage feedforward dropout ΔV 20 mV VMULTpk-VVFF 8
ZCD upper clamp voltage VZCDH 5 5.7 V IZCD = 2.5 mA 9
ZCD lower clamp voltage VZCDL -0.3 0 0.3 V IZCD = -2.5 mA 9
ZCD triggering voltage (negative-going edge) VZCDT 0.7 V 9
Tracking boost dropout voltage ΔV 20 mV VVFF - VTBO, ITBO = 0.25 mA 9
Tracking boost linear operation ITBO 0 0.25 mA 9
IINV - ITBO current mismatch -3.5 3.5 % ITBO = 25 µA to 0.25 mA 9
Tracking boost clamp voltage VTBOclamp 2.9 3 3.1 V VVFF = 4V 9
PFC_OK latch-off threshold Vthl 2.4 2.5 2.6 V Voltage rising 9
PFC_OK disable threshold Vth 0.2 V Voltage falling 9
PFC_OK enable threshold VEN 0.26 V Voltage rising 9
PFC_OK input bias current IPFC_OK -0.1 -1 µA VPFC_OK = 0 to 2.5V 9
PWM_LATCH high level voltage VH 3.7 V IPWM_LATCH = -0.5 mA 9
PWM_LATCH low level leakage current Ileak -1 µA VPWM_LATCH=0 9
PWM_STOP high level leakage current Ileak 1 µA VPWM_STOP = 6V 9
PWM_STOP low level voltage VL 1 V IPWM_STOP = 0.5 mA 9
Run input bias current IRUN -1 µA VRUN = 0 to 3 V 10
Run disable threshold VDIS 0.5 0.52 0.54 V Voltage falling 10
Run enable threshold VEN 0.56 0.6 0.64 V Voltage rising 10
Start timer period tSTART 75 150 300 µs 10
Gate driver dropout voltage (source) VOHdrop 2 2.6 V IGDsource = 20 mA 10
Gate driver dropout voltage (source high current) VOHdrop 2.5 3 V IGDsource = 200 mA 10
Gate driver dropout voltage (sink) VOLdrop 1 2 V IGDsink = 200 mA 10
Current fall time tf 30 70 ns 10
Current rise time tr 40 80 ns 10
Output clamp voltage VOclamp 10 12 15 V IGDsource = 5mA; Vcc = 20V 10
UVLO saturation 1.1 V Vcc=0 to VccOn, Isink=10mA 10

CAD (KiCad official)

  • Symbol: L6563A
  • Footprint: Package_SO:SOIC-14_3.9x8.7mm_P1.27mm
  • 3D model: SOIC-14 (KiCad packages3D, STEP)
  • 3D model files: l6563a-etched.step / l6563a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); l6563a.step / l6563a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (39 pp, sha256 867a46c1733f77b9, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF