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L2SC4081ST1G
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LRC Bipolar Transistors - BJT, SC-70. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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L2SC4081ST1G
LRC · Bipolar Transistors - BJT · SC-70
L2SC4081ST1G from LRC, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN silicon transistor. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; emitter-base breakdown voltage is specified at a minimum of 7 V. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; collector-emitter voltage is rated at 50 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SC-70 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V (BR)CEO | 50 | V | IC = 1 mA | 2 | ||
| Emitter-Base Breakdown Voltage | V (BR)EBO | 7 | V | IE = 50 µA | 2 | ||
| Collector-Base Breakdown Voltage | V (BR)CBO | 60 | V | IC = 50 µA | 2 | ||
| Collector Cutoff Current | I CBO | 0.1 | µA | VCB = 60 V | 2 | ||
| Emitter cutoff current | I EBO | 0.1 | µA | VEB = 7 V | 2 | ||
| Collector-emitter saturation voltage | V CE(sat) | 0.4 | V | IC/ IB = 50 mA / 5m A | 2 | ||
| DC current transfer ratio | h FE | 120 | 560 | V CE = 6 V, I C= 1mA | 2 | ||
| Output capacitance | C ob | 2 | 3.5 | pF | V CB = 12 V, I E= 0A, f =1MHz | 2 | |
| Transition frequency | f T | 180 | MHz | V CE = 12 V, I E=, 2mA, f =30MHz | 2 | ||
| Collector-Emitter Voltage | V CEO | 50 | V | 1 | |||
| Collector-Base Voltage | V CBO | 60 | V | 1 | |||
| Emitter-Base Voltage | V EBO | 7 | V | 1 | |||
| Collector Current, Continuous | I C | 150 | mAdc | 1 | |||
| Collector power dissipation | P C | 0.15 | W | 1 | |||
| Junction temperature | T j | 150 | °C | 1 | |||
| Storage temperature | T stg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
L2SC4081ST1G - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SC-70 (KiCad packages3D, STEP)
- 3D model files:
l2sc4081st1g-etched.step/l2sc4081st1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);l2sc4081st1g.step/l2sc4081st1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (5 pp, sha256
81d3873c995205ff, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# L2SC4081ST1G
**LRC** · Bipolar Transistors - BJT · SC-70
L2SC4081ST1G from LRC, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN silicon transistor. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; emitter-base breakdown voltage is specified at a minimum of 7 V. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; collector-emitter voltage is rated at 50 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SC-70 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V (BR)CEO | 50 | | | V | IC = 1 mA | 2 |
| Emitter-Base Breakdown Voltage | V (BR)EBO | 7 | | | V | IE = 50 µA | 2 |
| Collector-Base Breakdown Voltage | V (BR)CBO | 60 | | | V | IC = 50 µA | 2 |
| Collector Cutoff Current | I CBO | | | 0.1 | µA | VCB = 60 V | 2 |
| Emitter cutoff current | I EBO | | | 0.1 | µA | VEB = 7 V | 2 |
| Collector-emitter saturation voltage | V CE(sat) | | | 0.4 | V | IC/ IB = 50 mA / 5m A | 2 |
| DC current transfer ratio | h FE | 120 | | 560 | | V CE = 6 V, I C= 1mA | 2 |
| Output capacitance | C ob | | 2 | 3.5 | pF | V CB = 12 V, I E= 0A, f =1MHz | 2 |
| Transition frequency | f T | | 180 | | MHz | V CE = 12 V, I E=, 2mA, f =30MHz | 2 |
| Collector-Emitter Voltage | V CEO | | | 50 | V | | 1 |
| Collector-Base Voltage | V CBO | | | 60 | V | | 1 |
| Emitter-Base Voltage | V EBO | | | 7 | V | | 1 |
| Collector Current, Continuous | I C | | | 150 | mAdc | | 1 |
| Collector power dissipation | P C | | | 0.15 | W | | 1 |
| Junction temperature | T j | | | 150 | °C | | 1 |
| Storage temperature | T stg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `L2SC4081ST1G`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SC-70 (KiCad packages3D, STEP)
- 3D model files: `l2sc4081st1g-etched.step` / `l2sc4081st1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `l2sc4081st1g.step` / `l2sc4081st1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](docs/l2sc4081st1g-datasheet.pdf) (5 pp, sha256 `81d3873c995205ff`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/l2sc4081st1g-datasheet.pdf)