component

L2SC1623SLT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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L2SC1623SLT1G

LRC · Bipolar (BJT) · SOT-23

L2SC1623SLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the transistor; the datasheet gives the Base-Emitter saturation voltage (VBE(sat) max 1.0 V at IC=100 mA, IB=10 mA) and Base-Emitter voltage (VBE 0.55 to 0.65 V at IC=1 mA, VCE=6 V) for this pin's operating conditions.
2 EMITTER passive Emitter terminal of the transistor; the datasheet's maximum emitter-base voltage is VEBO 7 V and the emitter cutoff current is specified at VEB=5 V.
3 COLLECTOR passive Collector terminal of the transistor; the datasheet's maximum ratings are VCEO 50 V, VCBO 60 V and collector current IC 150 mA continuous.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 50 V 1
Collector-Base Voltage VCBO 60 V 1
Emitter-Base Voltage VEBO 7 V 1
Collector current-continuous IC 150 mAdc 1
Junction and Storage Temperature Tj,Tstg -55 150 °C 1
Collector Cutoff Current ICBO 0.1 μA VCB=60V 1
Emitter Cutoff Current IEBO 0.1 μA VEB=5V 1
DC Current Gain (grade S) hFE 270 560 IC=1.0mA, VCE=6V; hFE classification S 2
Collector-Emitter Saturation Voltage VCE(sat) 0.15 0.3 V IC=100mA, IB=10mA 2
Base-Emitter Saturation Voltage VBE(sat) 0.86 1 V IC=100mA, IB=10mA 2
Base-Emitter On Voltage VBE 0.55 0.62 0.65 V IC=1mA, VCE=6.0V 2
Total Device Dissipation, FR-5 Board PD 225 mW FR-5 Board (1), TA=25°C 1
Thermal Resistance, Junction to Ambient, FR-5 Board RθJA 556 °C/W FR-5 Board (1) 1
Total Device Dissipation, Alumina Substrate PD 300 mW Alumina Substrate (2), TA=25°C 1
Thermal Resistance, Junction to Ambient, Alumina Substrate RθJA 417 °C/W Alumina Substrate (2) 1
Derate above 25°C, FR-5 Board 1.8 mW/°C Derate above 25°C, FR-5 Board (1) 1
Derate above 25°C, Alumina Substrate 2.4 mW/°C Derate above 25°C, Alumina Substrate (2) 1
Current-Gain-Bandwidth Product fT 250 MHz VCE=6.0V, IE=-10mA 2
Output Capacitance Cob 3 pF VCE=6V, IE=0, f=1.0MHz 2

CAD (KiCad official)

  • Symbol: L2SC1623SLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: l2sc1623slt1g-etched.step / l2sc1623slt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); l2sc1623slt1g.step / l2sc1623slt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (6 pp, sha256 a97ccd30f8b9d8b8, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF