component
L2SA812SLT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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L2SA812SLT1G
LRC · Bipolar (BJT) · SOT-23
L2SA812SLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the PNP transistor, with emitter-base voltage limited to VEBO -6 V and base-emitter on voltage VBE of -0.58 V to -0.68 V at IC = -1 mA, VCE = -6 V. |
| 2 | Emitter | passive | Emitter terminal of the PNP transistor, rated for an emitter-base voltage VEBO of -6 V. |
| 3 | Collector | passive | Collector terminal of the PNP transistor, rated for VCEO -50 V, VCBO -60 V and continuous collector current IC -150 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | VBR(CEO) | -50 | V | IC = -1.0 mA, IB = 0 | 2 | ||
| Collector-Base Breakdown Voltage | VBR(CBO) | -60 | V | IC = -50 μA, IE = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | VBR(EBO) | -6 | V | IE = -50 μA, IC = 0 | 2 | ||
| Collector-Base cut-off current | ICBO | -0.1 | µA | IE = 0, VCB = -50 V | 2 | ||
| Emitter-Base cut-off current | IEBO | -0.1 | µA | IC = 0, VEB = -6 V | 2 | ||
| Collector-Emitter cutoff Current | ICEO | -10 | µA | IB = 0, VCE = -50 V | 2 | ||
| DC Current Gain | HFE | 270 | 560 | IC = - 1mA, VCE = - 6.0V | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.18 | -0.3 | V | IC = - 100mA, IB = - 10mA | 2 | |
| Base-Emitter On Voltage | VBE | -0.58 | -0.62 | -0.68 | V | IE = -1.0mA, VCE = - 6.0V | 2 |
| Collector-Emitter Voltage | VCEO | -50 | V | Ta = 25ºC | 1 | ||
| Collector-Base Voltage | VCBO | -60 | V | Ta = 25ºC | 1 | ||
| Emitter-Base Voltage | VEBO | -6 | V | Ta = 25ºC | 1 | ||
| Collector Current, Continuous | IC | -150 | mA | Ta = 25ºC | 1 | ||
| Total Device Dissipation, FR-5 Board | PD | 200 | mW | FR-5 Board (Note 1) @ TA = 25ºC | 1 | ||
| Derate above 25ºC | 1.8 | mW/ºC | Derate above 25ºC | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 556 | ºC/W | FR-5 Board (Note 1); FR-5 = 1.0×0.75×0.062 in. | 1 | ||
| Junction and Storage temperature | TJ,Tstg | -55 | 150 | ºC | 1 |
CAD (KiCad official)
- Symbol:
L2SA812SLT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
l2sa812slt1g-etched.step/l2sa812slt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);l2sa812slt1g.step/l2sa812slt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (7 pp, sha256
ead5576362657085, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).