component
L2N7002WT1G
Public Made by Adomby adom
LRC MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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l2n7002wt1g: specified limits as data (metadata.characteristics, 34 rows from the datasheet)
2 files changed
+457−1
README.md+41@@ -21,6 +21,47 @@ L2N7002WT1G from LRC, in a SOT-323. Pinout and pin descriptions extracted from t | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain–Source Voltage | VDSS | | | 60 | Vdc | | 1 |+| Drain–Gate Voltage | VDGR | | | 60 | Vdc | RGS = 1.0 MΩ | 1 |+| Drain Current – Continuous | ID | -115 | | 115 | mAdc | TC = 25°C (Note 1.) | 1 |+| Drain Current – Continuous | ID | -75 | | 75 | mAdc | TC = 100°C (Note 1.) | 1 |+| Drain Current – Pulsed | IDM | -800 | | 800 | mAdc | Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% (Note 2.) | 1 |+| Gate–Source Voltage – Continuous | VGS | -20 | | 20 | Vdc | | 1 |+| Gate–Source Voltage – Non-repetitive | VGSM | -40 | | 40 | Vpk | tp ≤ 50 µs | 1 |+| Total Device Dissipation, FR–5 Board | PD | | | 225 | mW | TA = 25°C (Note 3.) | 1 |+| Derate above 25°C, FR–5 Board | PD | | 1.8 | | mW/°C | Derate above 25°C (FR–5 Board) | 1 |+| Thermal Resistance, Junction to Ambient, FR–5 Board | RθJA | | | 556 | °C/W | FR–5 Board (Note 3.) | 1 |+| Total Device Dissipation, Alumina Substrate | PD | | | 300 | mW | Alumina Substrate (Note 4.), TA = 25°C | 1 |+| Derate above 25°C, Alumina Substrate | PD | | 2.4 | | mW/°C | Derate above 25°C (Alumina Substrate) | 1 |+| Thermal Resistance, Junction to Ambient, Alumina Substrate | RθJA | | | 417 | °C/W | Alumina Substrate (Note 4.) | 1 |+| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Drain–Source Breakdown Voltage | V(BR)DSS | 60 | | | Vdc | VGS = 0, ID = 10 µAdc | 2 |+| Zero Gate Voltage Drain Current, TJ = 25°C | IDSS | | | 1 | µAdc | VGS = 0, VDS = 60 Vdc, TJ = 25°C | 2 |+| Zero Gate Voltage Drain Current, TJ = 125°C | IDSS | | | 500 | µAdc | VGS = 0, VDS = 60 Vdc, TJ = 125°C | 2 |+| Gate–Body Leakage Current, Forward | IGSSF | | | 1 | Adc | VGS = 20 Vdc | 2 |+| Gate–Body Leakage Current, Reverse | IGSSR | | | -1 | µAdc | VGS = –20 Vdc | 2 |+| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | Vdc | VDS = VGS, ID = 250 µAdc | 2 |+| On–State Drain Current | ID(on) | 500 | | | mA | VDS ≥ 2.0 VDS(on), VGS = 10 Vdc | 2 |+| Static Drain–Source On–State Voltage | VDS(on) | | | 3.75 | Vdc | VGS = 10 Vdc, ID = 500 mAdc | 2 |+| Static Drain–Source On–State Voltage | VDS(on) | | | 0.375 | Vdc | VGS = 5.0 Vdc, ID = 50 mAdc | 2 |+| Static Drain–Source On–State Resistance | rDS(on) | | | 7.5 | Ohms | VGS = 10 V, ID = 500 mAdc, TC = 25°C | 2 |+| Static Drain–Source On–State Resistance | rDS(on) | | | 13.5 | Ohms | VGS = 10 V, ID = 500 mAdc, TC = 125°C | 2 |+| Forward Transconductance | gFS | 80 | | | mmhos | VDS ≥ 2.0 VDS(on), ID = 200 mAdc | 2 |+| Input Capacitance | Ciss | | 17 | 50 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 |+| Output Capacitance | Coss | | 10 | 25 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 2.5 | 5 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | 2 |+| Turn–On Delay Time | td(on) | | 7 | 20 | ns | VDD = 25 Vdc, ID 500 mAdc | 2 |+| Turn–Off Delay Time | td(off) | | 11 | 40 | ns | RG = 25 Ω, RL = 50 Ω, Vgen = 10 V | 2 |+| Diode Forward On–Voltage | VSD | | | -1.5 | Vdc | IS = 115 mAdc, VGS = 0 V | 2 |+| Source Current Continuous (Body Diode) | IS | | | -115 | mAdc | | 2 |+| Source Current Pulsed | ISM | | | -800 | mAdc | | 2 |+ ## CAD (KiCad official) - Symbol: `L2N7002WT1G`
page.json+416−1@@ -147,6 +147,421 @@ "Package": "SOT-323", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "fd7d7d2a79114d55",+ "rows": [+ {+ "name": "Drain–Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain–Gate Voltage",+ "symbol": "VDGR",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "RGS = 1.0 MΩ",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current – Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": -115,+ "typ": null,+ "max": 115,+ "conditions": "TC = 25°C (Note 1.)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current – Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": -75,+ "typ": null,+ "max": 75,+ "conditions": "TC = 100°C (Note 1.)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current – Pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": -800,+ "typ": null,+ "max": 800,+ "conditions": "Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% (Note 2.)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate–Source Voltage – Continuous",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "Vdc",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate–Source Voltage – Non-repetitive",+ "symbol": "VGSM",+ "kind": "absolute_maximum",+ "unit": "Vpk",+ "min": -40,+ "typ": null,+ "max": 40,+ "conditions": "tp ≤ 50 µs",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation, FR–5 Board",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "TA = 25°C (Note 3.)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Derate above 25°C, FR–5 Board",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW/°C",+ "min": null,+ "typ": 1.8,+ "max": null,+ "conditions": "Derate above 25°C (FR–5 Board)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient, FR–5 Board",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 556,+ "conditions": "FR–5 Board (Note 3.)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation, Alumina Substrate",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Alumina Substrate (Note 4.), TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Derate above 25°C, Alumina Substrate",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW/°C",+ "min": null,+ "typ": 2.4,+ "max": null,+ "conditions": "Derate above 25°C (Alumina Substrate)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient, Alumina Substrate",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "Alumina Substrate (Note 4.)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain–Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "Vdc",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0, ID = 10 µAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current, TJ = 25°C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µAdc",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0, VDS = 60 Vdc, TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current, TJ = 125°C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µAdc",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "VGS = 0, VDS = 60 Vdc, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate–Body Leakage Current, Forward",+ "symbol": "IGSSF",+ "kind": "electrical",+ "unit": "Adc",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 20 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate–Body Leakage Current, Reverse",+ "symbol": "IGSSR",+ "kind": "electrical",+ "unit": "µAdc",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VGS = –20 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": 1,+ "typ": 1.6,+ "max": 2.5,+ "conditions": "VDS = VGS, ID = 250 µAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On–State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "mA",+ "min": 500,+ "typ": null,+ "max": null,+ "conditions": "VDS ≥ 2.0 VDS(on), VGS = 10 Vdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain–Source On–State Voltage",+ "symbol": "VDS(on)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 3.75,+ "conditions": "VGS = 10 Vdc, ID = 500 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain–Source On–State Voltage",+ "symbol": "VDS(on)",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": 0.375,+ "conditions": "VGS = 5.0 Vdc, ID = 50 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain–Source On–State Resistance",+ "symbol": "rDS(on)",+ "kind": "electrical",+ "unit": "Ohms",+ "min": null,+ "typ": null,+ "max": 7.5,+ "conditions": "VGS = 10 V, ID = 500 mAdc, TC = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain–Source On–State Resistance",+ "symbol": "rDS(on)",+ "kind": "electrical",+ "unit": "Ohms",+ "min": null,+ "typ": null,+ "max": 13.5,+ "conditions": "VGS = 10 V, ID = 500 mAdc, TC = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "mmhos",+ "min": 80,+ "typ": null,+ "max": null,+ "conditions": "VDS ≥ 2.0 VDS(on), ID = 200 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 17,+ "max": 50,+ "conditions": "VDS = 25 Vdc, VGS = 0, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 10,+ "max": 25,+ "conditions": "VDS = 25 Vdc, VGS = 0, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 2.5,+ "max": 5,+ "conditions": "VDS = 25 Vdc, VGS = 0, f = 1.0 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn–On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 7,+ "max": 20,+ "conditions": "VDD = 25 Vdc, ID 500 mAdc",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn–Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": 40,+ "conditions": "RG = 25 Ω, RL = 50 Ω, Vgen = 10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward On–Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "Vdc",+ "min": null,+ "typ": null,+ "max": -1.5,+ "conditions": "IS = 115 mAdc, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Source Current Continuous (Body Diode)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "mAdc",+ "min": null,+ "typ": null,+ "max": -115,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Source Current Pulsed",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "mAdc",+ "min": null,+ "typ": null,+ "max": -800,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +603,4 @@ "visibility": { "public": true }-}+}