component
L2N7002KLT1G-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
L2N7002KLT1G-MS
MSKSEMI · MOSFETs · SOT-23
L2N7002KLT1G-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, rated VGS ±20 V max, threshold 1 to 2.5 V, with embedded G-S ESD protection diode (ESD protected up to 2KV). |
| 2 | S | passive | Source; connects to the body diode anode and the G-S protection diode, continuous drain/source current 0.3 A. |
| 3 | D | passive | Drain; rated VDS 60 V, continuous drain current 0.3 A (0.8 A pulsed), RDS(ON) 2.2 Ω at VGS=10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V , ID=250uA | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VGS=VDS , ID =250uA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | 2.2 | 2.8 | Ω | VGS=10V , ID=0.3A | 3 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=60V , VGS=0V , TJ=25℃ | 3 | ||
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=48V , VGS=0V , TJ=125℃ | 3 | ||
| Gate-Source Leakage Current | IGSS | -10 | 10 | uA | VGS= ±20V , VDS=0V | 3 | |
| Diode Forward Voltage | VSD | 1 | V | VGS=0V , IS=1A , TJ=25℃ | 3 | ||
| Continuous Source Current | IS | 0.3 | A | VG=VD=0V , Force Current | 3 | ||
| Pulsed Source Current | ISM | 1.2 | A | 3 | |||
| Total Gate Charge | Qg | 3.7 | 5.6 | nC | VDS=30V , VGS=10V , ID=1A | 3 | |
| Gate-Source Charge | Qgs | 0.9 | 1.4 | nC | VDS=30V , VGS=10V , ID=1A | 3 | |
| Gate-Drain Charge | Qgd | 0.4 | 0.6 | nC | VDS=30V , VGS=10V , ID=1A | 3 | |
| Turn-On Delay Time | Td(on) | 3 | 6 | ns | VDD=30V ,VGS=10V , RG=6Ω, ID=0.2A | 3 | |
| Rise Time | Tr | 5 | 10 | ns | VDD=30V ,VGS=10V , RG=6Ω, ID=0.2A | 3 | |
| Turn-Off Delay Time | Td(off) | 14 | 27 | ns | VDD=30V ,VGS=10V , RG=6Ω, ID=0.2A | 3 | |
| Fall Time | Tf | 9 | 17 | ns | VDD=30V ,VGS=10V , RG=6Ω, ID=0.2A | 3 | |
| Input Capacitance | Ciss | 25.5 | 38 | pF | VDS=30V , VGS=0V , F=1MHz | 3 | |
| Output Capacitance | Coss | 17 | 26 | pF | VDS=30V , VGS=0V , F=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 7.8 | 12 | pF | VDS=30V , VGS=0V , F=1MHz | 3 | |
| Reverse Recovery Time | trr | 3.4 | ns | VGS=50V, IS=1A , dI/dt=100A/µs TJ=25℃ | 3 | ||
| Reverse Recovery Charge | Qrr | 0.7 | nC | VGS=50V, IS=1A , dI/dt=100A/µs TJ=25℃ | 3 | ||
| Forward Transconductance | gfs | 0.5 | S | VDS=10V , ID=0.3A | 3 | ||
| Drain-Source Voltage | VDS | 60 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Drain Current, Continuous | ID | 0.3 | A | TC=25℃ | 2 | ||
| Drain Current, Continuous | ID | 0.1 | A | TC=100℃ | 2 | ||
| Drain Current, Pulsed | IDM | 0.8 | A | Pulsed (footnote 1: pulse width limited by max junction temperature) | 2 | ||
| Power Dissipation | PD | 0.35 | W | TC=25℃ | 2 | ||
| Power Dissipation, Derate above 25 ℃ | 0.003 | W/℃ | derate above 25 ℃ | 2 | |||
| Storage Temperature Range | TSTG | -50 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -50 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction to ambient | RθJA | 357 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
L2N7002KLT1G-MS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
l2n7002klt1g-ms-etched.step/l2n7002klt1g-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);l2n7002klt1g-ms.step/l2n7002klt1g-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (7 pp, sha256
d6138db09f232395, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# L2N7002KLT1G-MS
**MSKSEMI** · MOSFETs · SOT-23
L2N7002KLT1G-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, rated VGS ±20 V max, threshold 1 to 2.5 V, with embedded G-S ESD protection diode (ESD protected up to 2KV). |
| 2 | S | passive | Source; connects to the body diode anode and the G-S protection diode, continuous drain/source current 0.3 A. |
| 3 | D | passive | Drain; rated VDS 60 V, continuous drain current 0.3 A (0.8 A pulsed), RDS(ON) 2.2 Ω at VGS=10 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V , ID=250uA | 3 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VGS=VDS , ID =250uA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 2.2 | 2.8 | Ω | VGS=10V , ID=0.3A | 3 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=60V , VGS=0V , TJ=25℃ | 3 |
| Drain-Source Leakage Current | IDSS | | | 10 | uA | VDS=48V , VGS=0V , TJ=125℃ | 3 |
| Gate-Source Leakage Current | IGSS | -10 | | 10 | uA | VGS= ±20V , VDS=0V | 3 |
| Diode Forward Voltage | VSD | | | 1 | V | VGS=0V , IS=1A , TJ=25℃ | 3 |
| Continuous Source Current | IS | | | 0.3 | A | VG=VD=0V , Force Current | 3 |
| Pulsed Source Current | ISM | | | 1.2 | A | | 3 |
| Total Gate Charge | Qg | | 3.7 | 5.6 | nC | VDS=30V , VGS=10V , ID=1A | 3 |
| Gate-Source Charge | Qgs | | 0.9 | 1.4 | nC | VDS=30V , VGS=10V , ID=1A | 3 |
| Gate-Drain Charge | Qgd | | 0.4 | 0.6 | nC | VDS=30V , VGS=10V , ID=1A | 3 |
| Turn-On Delay Time | Td(on) | | 3 | 6 | ns | VDD=30V ,VGS=10V , RG=6Ω, ID=0.2A | 3 |
| Rise Time | Tr | | 5 | 10 | ns | VDD=30V ,VGS=10V , RG=6Ω, ID=0.2A | 3 |
| Turn-Off Delay Time | Td(off) | | 14 | 27 | ns | VDD=30V ,VGS=10V , RG=6Ω, ID=0.2A | 3 |
| Fall Time | Tf | | 9 | 17 | ns | VDD=30V ,VGS=10V , RG=6Ω, ID=0.2A | 3 |
| Input Capacitance | Ciss | | 25.5 | 38 | pF | VDS=30V , VGS=0V , F=1MHz | 3 |
| Output Capacitance | Coss | | 17 | 26 | pF | VDS=30V , VGS=0V , F=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 7.8 | 12 | pF | VDS=30V , VGS=0V , F=1MHz | 3 |
| Reverse Recovery Time | trr | | 3.4 | | ns | VGS=50V, IS=1A , dI/dt=100A/µs TJ=25℃ | 3 |
| Reverse Recovery Charge | Qrr | | 0.7 | | nC | VGS=50V, IS=1A , dI/dt=100A/µs TJ=25℃ | 3 |
| Forward Transconductance | gfs | | 0.5 | | S | VDS=10V , ID=0.3A | 3 |
| Drain-Source Voltage | VDS | | | 60 | V | | 2 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 2 |
| Drain Current, Continuous | ID | | | 0.3 | A | TC=25℃ | 2 |
| Drain Current, Continuous | ID | | | 0.1 | A | TC=100℃ | 2 |
| Drain Current, Pulsed | IDM | | | 0.8 | A | Pulsed (footnote 1: pulse width limited by max junction temperature) | 2 |
| Power Dissipation | PD | | | 0.35 | W | TC=25℃ | 2 |
| Power Dissipation, Derate above 25 ℃ | | | 0.003 | | W/℃ | derate above 25 ℃ | 2 |
| Storage Temperature Range | TSTG | -50 | | 150 | ℃ | | 2 |
| Operating Junction Temperature Range | TJ | -50 | | 150 | ℃ | | 2 |
| Thermal Resistance Junction to ambient | RθJA | | | 357 | ℃/W | | 3 |
## CAD (KiCad official)
- Symbol: `L2N7002KLT1G-MS`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `l2n7002klt1g-ms-etched.step` / `l2n7002klt1g-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `l2n7002klt1g-ms.step` / `l2n7002klt1g-ms.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603110694476922880) (7 pp, sha256 `d6138db09f232395`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/l2n7002klt1g-ms-datasheet.pdf)