component
KY6802
Public Made by Adomby adom
KY MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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KY6802
KY · MOSFETs · SOT-23-6L
KY6802 from KY, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the first N-channel MOSFET; the datasheet gives VGSS of ±12 V as the absolute maximum gate-source voltage for the device. |
| 2 | S2 | passive | Source of the second N-channel MOSFET; the datasheet gives VDSS of 20 V as the drain-source voltage limit for the device. |
| 3 | G2 | input | Gate of the second N-channel MOSFET; the datasheet gives VGSS of ±12 V as the absolute maximum gate-source voltage for the device. |
| 4 | D2 | passive | Drain of the second N-channel MOSFET; the datasheet gives ID of 3 A continuous and IDM of 12 A pulsed drain current for the device. |
| 5 | S1 | passive | Source of the first N-channel MOSFET; the datasheet gives VDSS of 20 V as the drain-source voltage limit for the device. |
| 6 | D1 | passive | Drain of the first N-channel MOSFET; the datasheet gives ID of 3 A continuous and IDM of 12 A pulsed drain current for the device. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KY |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | 1 | |||
| Gate-Source Voltage | VGSS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 3 | A | 1 | |||
| Pulsed Drain Current | IDM | 12 | A | 1 | |||
| Total Power Dissipation | Ptot | 0.83 | W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 150 | ℃/W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 19V, VGS = 0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VGS = ±12V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | V | VDS = VGS, ID = 250μA | 2 | ||
| On-State Resistance | RDS(ON) | 55 | mΩ | VGS = 4.5V, ID = 3A | 2 | ||
| On-State Resistance | RDS(ON) | 85 | mΩ | VGS = 2.5V, ID = 2A | 2 | ||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, ISD = 3A, TJ = 25℃ | 2 | ||
| Reverse Recovery Time | trr | 10 | ns | VGS = 0V, IS = 3A, di/dt = 100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 3 | nC | 2 |
CAD (KiCad official)
- Symbol:
KY6802 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
ky6802-etched.step/ky6802-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ky6802.step/ky6802.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KY datasheet (5 pp, sha256
f1eab34e543bc9b3, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# KY6802
**KY** · MOSFETs · SOT-23-6L
KY6802 from KY, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the first N-channel MOSFET; the datasheet gives VGSS of ±12 V as the absolute maximum gate-source voltage for the device. |
| 2 | S2 | passive | Source of the second N-channel MOSFET; the datasheet gives VDSS of 20 V as the drain-source voltage limit for the device. |
| 3 | G2 | input | Gate of the second N-channel MOSFET; the datasheet gives VGSS of ±12 V as the absolute maximum gate-source voltage for the device. |
| 4 | D2 | passive | Drain of the second N-channel MOSFET; the datasheet gives ID of 3 A continuous and IDM of 12 A pulsed drain current for the device. |
| 5 | S1 | passive | Source of the first N-channel MOSFET; the datasheet gives VDSS of 20 V as the drain-source voltage limit for the device. |
| 6 | D1 | passive | Drain of the first N-channel MOSFET; the datasheet gives ID of 3 A continuous and IDM of 12 A pulsed drain current for the device. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KY |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGSS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | 3 | A | | 1 |
| Pulsed Drain Current | IDM | | | 12 | A | | 1 |
| Total Power Dissipation | Ptot | | | 0.83 | W | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 150 | ℃/W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | | | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 19V, VGS = 0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VGS = ±12V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(th) | | | 1 | V | VDS = VGS, ID = 250μA | 2 |
| On-State Resistance | RDS(ON) | | | 55 | mΩ | VGS = 4.5V, ID = 3A | 2 |
| On-State Resistance | RDS(ON) | | | 85 | mΩ | VGS = 2.5V, ID = 2A | 2 |
| Drain to Source Diode Forward Voltage | VSD | | | 1.2 | V | VGS = 0V, ISD = 3A, TJ = 25℃ | 2 |
| Reverse Recovery Time | trr | | | 10 | ns | VGS = 0V, IS = 3A, di/dt = 100A/μs | 2 |
| Reverse Recovery Charge | Qrr | | | 3 | nC | | 2 |
## CAD (KiCad official)
- Symbol: `KY6802`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `ky6802-etched.step` / `ky6802-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ky6802.step` / `ky6802.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KY datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590233648495824896) (5 pp, sha256 `f1eab34e543bc9b3`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ky6802-datasheet.pdf)