component
KY2N7002KL
Public Made by Adomby adom
KY MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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KY2N7002KL
KY · MOSFETs · SOT-23
KY2N7002KL from KY, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate-source voltage is rated ±20 V (VGSS), and the gate threshold voltage is 0.5 to 1.5 V at ID = 250 μA. |
| 2 | SOURCE | passive | Source terminal of the MOSFET; continuous drain current is rated 0.5 A and pulsed drain current 2.0 A (IDM). |
| 3 | DRAIN | passive | Drain terminal; drain-source voltage is rated 60 V (VDSS) with continuous drain current 0.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KY |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 0.5 | A | 1 | |||
| Pulsed Drain Current | IDM | 2 | A | note1 repetitive rating, pulse width limited by max junction temperature | 1 | ||
| Power Dissipation | PD | 0.83 | W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 150 | ℃/W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0V,ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 48V, VGS = 0V, TJ = 25℃ | 2 | ||
| Gate to Body Leakage Current | IGSS | -10 | 10 | uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.5 | 1.5 | V | VDS =VGS,ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 1.6 | Ω | VGS =10V, ID =0.5A | 2 | ||
| Static Drain-Source On-Resistance | RDS(on) | 2.5 | Ω | VGS =4.5V, ID =0.1A | 2 | ||
| Maximum Continuous Drain to Source Diode Forward Current | IS | 0.5 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.3 | V | VGS = 0V, ISD=0.5A, TJ = 25℃ | 2 | ||
| Input Capacitance | Ciss | 22.8 | pF | VDS =25V, VGS = 0V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 3.5 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 2.9 | pF | 2 | |||
| Total Gate Charge | Qg | 280 | pC | VDS=10V, ID=0.5A, VGS=4.5V | 2 | ||
| Gate-Source Charge | Qgs | 82 | pC | 2 | |||
| Gate-Drain (Miller) Charge | Qgd | 201 | pC | 2 | |||
| Turn-On Delay Time | td(on) | 3.8 | ns | VGS = 10V, VDS=30V, RG =25Ω, ID=0.5A, RL =60Ω | 2 | ||
| Turn-On Rise Time | tr | 3.4 | ns | 2 | |||
| Turn-Off Delay Time | td(off) | 19 | ns | 2 | |||
| Turn-Off Fall Time | tf | 12 | ns | 2 | |||
| Reverse Recovery Time | trr | 42 | ns | VGS = 0V, IS =0.5A, di/dt =100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 41 | nC | 2 | |||
| Gate Resistance | RG | 100 | Ω | VGS = VDS = 0 V, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
KY2N7002KL - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ky2n7002kl-etched.step/ky2n7002kl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ky2n7002kl.step/ky2n7002kl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KY datasheet (6 pp, sha256
ea249f3cbd39bbee, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# KY2N7002KL
**KY** · MOSFETs · SOT-23
KY2N7002KL from KY, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate-source voltage is rated ±20 V (VGSS), and the gate threshold voltage is 0.5 to 1.5 V at ID = 250 μA. |
| 2 | SOURCE | passive | Source terminal of the MOSFET; continuous drain current is rated 0.5 A and pulsed drain current 2.0 A (IDM). |
| 3 | DRAIN | passive | Drain terminal; drain-source voltage is rated 60 V (VDSS) with continuous drain current 0.5 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KY |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 0.5 | A | | 1 |
| Pulsed Drain Current | IDM | | | 2 | A | note1 repetitive rating, pulse width limited by max junction temperature | 1 |
| Power Dissipation | PD | | | 0.83 | W | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 150 | ℃/W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS = 0V,ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 48V, VGS = 0V, TJ = 25℃ | 2 |
| Gate to Body Leakage Current | IGSS | -10 | | 10 | uA | | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | | 1.5 | V | VDS =VGS,ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | | 1.6 | Ω | VGS =10V, ID =0.5A | 2 |
| Static Drain-Source On-Resistance | RDS(on) | | | 2.5 | Ω | VGS =4.5V, ID =0.1A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS | | | 0.5 | A | | 2 |
| Drain to Source Diode Forward Voltage | VSD | | | 1.3 | V | VGS = 0V, ISD=0.5A, TJ = 25℃ | 2 |
| Input Capacitance | Ciss | | 22.8 | | pF | VDS =25V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 3.5 | | pF | | 2 |
| Reverse Transfer Capacitance | Crss | | 2.9 | | pF | | 2 |
| Total Gate Charge | Qg | | 280 | | pC | VDS=10V, ID=0.5A, VGS=4.5V | 2 |
| Gate-Source Charge | Qgs | | 82 | | pC | | 2 |
| Gate-Drain (Miller) Charge | Qgd | | 201 | | pC | | 2 |
| Turn-On Delay Time | td(on) | | 3.8 | | ns | VGS = 10V, VDS=30V, RG =25Ω, ID=0.5A, RL =60Ω | 2 |
| Turn-On Rise Time | tr | | 3.4 | | ns | | 2 |
| Turn-Off Delay Time | td(off) | | 19 | | ns | | 2 |
| Turn-Off Fall Time | tf | | 12 | | ns | | 2 |
| Reverse Recovery Time | trr | | 42 | | ns | VGS = 0V, IS =0.5A, di/dt =100A/μs | 2 |
| Reverse Recovery Charge | Qrr | | 41 | | nC | | 2 |
| Gate Resistance | RG | | 100 | | Ω | VGS = VDS = 0 V, f = 1 MHz | 2 |
## CAD (KiCad official)
- Symbol: `KY2N7002KL`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ky2n7002kl-etched.step` / `ky2n7002kl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ky2n7002kl.step` / `ky2n7002kl.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KY datasheet](docs/ky2n7002kl-datasheet.pdf) (6 pp, sha256 `ea249f3cbd39bbee`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ky2n7002kl-datasheet.pdf)